2SD525 JMNIC | Alldatasheet
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Technical content
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION ·
- With TO-220C package
- Complement to type 2SB595
- High breakdown voltage :VCEO=100V
- Low collector saturation volage : V CE(sat)=2.0V(Max)
APPLICATIONS
- Power amplifier applications
- Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IE Emitter current 5 A IB Base current 0.5 A PC Collectorl power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JM nic
Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors 2SD525 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage I C=50mA; IB=0 100 V VEBO Emitter-base breakdown votage I E=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage I C=4A;IB=0.4 A 2.0 V VBE Emitter-base voltage I C=1A ; VCE=5V 1.5 V ICBO Collector cut-off current V CB=100V IE=0 100 μA IEBO Emitter cut-off current V EB=5V; IC=0 1 mA hFE-1 DC current gain I C=1A ; VCE=5V 40 240 hFE-2 DC current gain I C=4A ; VCE=5V 20 fT Transition frequency I C=1A ; VCE=5V 12 MHz COB Output capacitance I E=0; VCB=10V;f=1MHz 100 pF hFE-1 classifications R O Y 40-80 70-140 120-240
Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors 2SD525 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)