2SD1651 JMNIC | Alldatasheet
Document overview
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Technical content
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1651 DESCRIPTION ·
- With TO-3PML package
- Built-in damper diode
- High breakdown voltage
- High speed switching
APPLICATIONS
- For color TV horizontal output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A PC Collector power dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JM nic Fig.1 simplified outline (TO-3PML) and symbol
Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors 2SD1651 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A , IB=0 800 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.8A 3.0 5.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current V CB=800V; IE=0 10 μA ICES Collector cut-off current VCES=1500V; RBE=∞ 1.0 mA IEBO Emitter cut-off current V EB=4V; IC=0 40 130 mA hFE DC current gain I C=1A ; VCE=5V 8 fT Transition frequency I C=1A ; VCE=10V 3 MHz VF Diode forward voltage I F=5A 2.0 V
Product Specification www.jmnic.com JMn ic Silicon NPN Power Transistors 2SD1651 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)