CS6J70A4-G HUAJING-MICRO | Alldatasheet

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WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2016V01 ○R Silicon N-Channel Power MOSFET General Description ： CS6J70 A4-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-252, which accords with the RoHS standard. Features ： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications ： Power switch circuit of adaptor and charger. Absolute （Tc= 25℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage( VGS= 0V) 700 V ID Continuous Drain Current 6 A IDM Pulsed Drain Current 18 A VGSS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 50 mJ dv/dta3 Peak Diode Recovery dv/dt 5 V/ns PD Power Dissipation(T=25 °C) 94 W TJ，Tstg Operating and Storage Temperature Range –55…+150 ℃ TL Maximum Temperature for Soldering 300 ℃ VDSS 700 V ID 6 A PD(TC=25℃) 94 W RDS(ON)Typ 0.95 Ω

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2016V01 ○R CS6J70 A4-G Electrical Characteristics（Tc= 25℃ unless otherwise specified ）： OFF Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 µA 700 -- -- V ΔBVDSS /ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference2 5℃ -- 0.67 -- V/℃ IDSS Drain to Source Leakage Current VDS = 700V, V GS= 0V, Ta = 25 ℃ -- -- 1 µA VDS =560V, VGS= 0V, IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=2.8A -- 0.95 1.3 Ω VGS(TH) Gate Threshold Voltage VDS = V GS, ID = 250 µA 2 -- 4 V Pulse width tp ≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. Ciss Input Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 416 -- pF Coss Output Capacitance -- 368 -- Crss Reverse Transfer Capacitance -- 13.8 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time ID = 6A V DD = 400V RG =10 Ω -- 15 42 ns tr Rise Time -- 20 60 td(OFF) Turn-Off Delay Time -- 38 80 tf Fall Time -- 9 32 Qg Total Gate Charge ID =6A V DD =560V VGS = 10V -- 16.9 -- nC Qgs Gate to Source Charge -- 3 -- Qgd Gate to Drain ( “Miller ”)Charge -- 9.2 --

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2016V01 ○R CS6J70 A4-G a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=20.0mH, Rg=25 Ω，Vdd=50V, Start T J=25℃ a3：ISD =6A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃ Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) TC=25℃ -- 6 A ISM Maximum Pulsed Current (Body Diode) -- 18 A VSD Diode Forward Voltage IS=6A,V GS=0V -- 0.9 1.2 V trr Reverse Recovery Time IF=IS T j = 25 ℃ dIF/dt=100A/us, VGS=0V s -- 282 -- ns Qrr Reverse Recovery Charge -- 1.96 -- uC IRRM Reverse Recovery Current 0.9 1.2 A Symbol Parameter Typ. Units RθJC Junction-to-Case 1.32 ℃/W RθJA Junction-to-Ambient 100 ℃/W

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10 2016V01 ○R CS6J70 A4-G Characteristics Curve： Figure.1 Maximum Forward Bias Safe Operating Area Figure.2 Maximum Power Dissipation vs Case Temperature Figure.3 Maximum Continuous Drain Current vs Case Temperature Figure.4 Typical Output Characteristics Figure.5 Maximum Effective Thermal Impedance , Junction to Case

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2016V01 ○R CS6J70 A4-G Figure.6 Typical Transfer Characteristics Figure.7 Typical Body Diode Transfer Characteristics Figure.9 Typical Drian to Source on Resistance vs Junction Temperature Figure.8 Typical Drain to Source ON Resistance vs Drain Current

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10 2016V01 ○R CS6J70 A4-G Figure.10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature Figure.12 Typical Capacitance vs Drain to Source Voltage Figure.13 Typical Gate Charge vs Gate to Source Voltage

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 10 2016V01 ○R CS6J70 A4-G Test Circuit and Waveform

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2016V01 ○R CS6J70 A4-G

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2016V01 ○R CS6J70 A4-G

Package Information

Values(mm) MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2016V01 ○R CS6J70 A4-G The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP Limit ≤0.1% ≤0.1% 0.01% Note ○：Means the hazardous material is under the criterion of 2011/65/EU. ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFET is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Tel: +86 0510-85807228 Fax: +86- 0510-85800864 Marketing Part： Post ：214061 Tel ： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail ：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110