CS4N65

CS4N65A8HD HUAJING-MICRO | Alldatasheet

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WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01 Silicon N-Channel Power MOSFET 0General Description ： CS4N65 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features ： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications ： Power switch circuit of adaptor and charger. Absolute （Tc= 25℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 650 V ID Continuous Drain Current 4 A Continuous Drain Current T C = 100 °C 3.2 A IDM Pulsed Drain Current 16 A VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 150 mJ EAR Avalanche Energy ,Repetitive 30 mJ IAR a1 Avalanche Current 2.5 A dv/dt a3 Peak Diode Recovery dv/dt 5.0 V/ns PD Power Dissipation 75 W Derating Factor above 25 °C 0.60 W/℃ VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 3000 V TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL Maximum Temperature for Soldering 300 ℃ VDSS 650 V ID 4 A PD(TC=25℃) 75 W RDS(ON)Typ 2 Ω

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2015V01 Electrical Characteristics（Tc= 25℃ unless otherwise specified ）： OFF Characteristics Symbol Parameter Test Conditions Rating Unit s Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 µA 650 -- -- V ΔBVDSS /ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference2 5℃ -- 0.67 -- V/℃ IDSS Drain to Source Leakage Current VDS =650V, VGS= 0V, VDS =520V, V GS= 0V, IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 10 µA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -10 µA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=2A -- 2 2.5 Ω VGS(TH) Gate Threshold Voltage VDS = V GS, ID = 250 µA 2.0 4.0 V Pulse width tp ≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. gfs Forward Trans conductance VDS=15V, ID =2A 3.5 -- S Ciss Input Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 544 pF Coss Output Capacitance -- 55 Crss Reverse Transfer Capacitance -- 8.5 Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time ID =4A V DD = 325V RG =12 Ω -- 10 -- ns tr Rise Time -- 11 -- td(OFF) Turn-Off Delay Time -- 31 -- tf Fall Time -- 16 -- Qg Total Gate Charge ID =4A V DD =325V VGS = 10V -- 14.5 nC Qgs Gate to Source Charge -- 3 Qgd Gate to Drain ( “Miller ”)Charge -- 6

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2015V01 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 4 A ISM Maximum Pulsed Current (Body Diode) -- -- 16 A VSD Diode Forward Voltage IS=4.0A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS=4.0A,T j = 25 °C dIF/dt=100A/us, VGS=0V -- 465 -- ns Qrr Reverse Recovery Charge -- 1.7 -- µC Pulse width tp ≤300µs,δ≤2% Symbol Parameter Typ. Units RθJC Junction-to-Case 1.67 ℃/W RθJA Junction-to-Ambient 62.5 ℃/W Gate-source Zener diode Symbol Parameter Test Conditions Rating Units Min. Typ. Max. VGSO Gate-source breakdown voltage IGS= ±1mA(Open Drain) 30 V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device ’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ’s integrity. These integrated Zener diodes thus avoid the usage of external components. a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=10mH, I D=5.5A, Start T J=25℃ a3：ISD =4A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10 2015V01 Characteristics Curve： Vds , Drain-to-Source Voltage , Volts

0.01 Id , Drain Current , Amps

0.1 10 100 1000 100 TC , Case Temperature , C PD , Power Dissipation ，Watts 50 100 125 1500 0.001 0.01 0.1 Rectangular Pulse Duration,Seconds Thermal Impedance, Normalized 1.5 4.5 0 5 10 15 20 25 Vds , Drain-to-Source Voltage , Volts Id , Drain Current , Amps Figure 2 Maximum Power Dissipation vs Case Temperature Figure 5 Maximum Effective Thermal Impendance , Junction to Case Figure 4 Typical Output Characteristics Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 1 Maximum Forward Bias Safe Operating Area 1ms 10ms 100ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25℃ Single Pulse VGS=15V VGS=5.5V VGS=6V VGS=6.5V VGS=7V PDM NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 50% 20% 10% Single pulse PULSE DURATION=10μs DUTY FACTOR=0.5%MAX Tc = 25℃ DC VGS=4.5V TC , Case Temperature , C Id , Drain Current , Amps 0 25 15010075 125

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 10 2015V01 Test Circuit and Waveform

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2015V01

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2015V01 Package Information ： Items Values(mm) MIN MAX A 10.00 10.60 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 3.30 3.80 L 12.7 14.7 N 2.34 2.74 Q 2.40 3.00 3.50 3.90

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2015V01 The name and content of poisonous and harmful material in products Part’s Name Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE Note ○：means the hazardous material is under the criterion of SJ/T11363-2006. ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Tel: 0510-85807228 Fax: 0510-85800864 Marketing Part： Post ：214061 Tel / Fax：0510-85807228-3663/5508 E-mail ：sales@crhj.com.cn 0510-85800360 （Fax） Application and Service：Post：214061 Tel / Fax：0510-85807228-3399 / 2227 E-mail：apply@crhj.com.cn