CS13N50

CS13N50A8H HUAJING-MICRO | Alldatasheet

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WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2015V01 Silicon N-Channel Power MOSFET General Description ： CS13N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.45 l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications ： Power switch circuit of adaptor and charger. Absolute （Tc= 25 unless otherwise specified℃ ）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 500 V ID Continuous Drain Current 13 A Continuous Drain Current T C = 100 °C 10 A IDM Pulsed Drain Current 52 A VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 1100 mJ EAR Avalanche Energy ,Repetitive 78 mJ IAR a1 Avalanche Current 4.0 A dv/dt a3 Peak Diode Recovery dv/dt 5 V/ns PD Power Dissipation 150 W Derating Factor above 25 °C 1.2 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL Maximum Temperature for Soldering 300 ℃ VDSS 500 V ID 13 A PD (TC=25℃) 150 W RDS(ON)Typ 0.34 Ω

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2015V01 Electrical Characteristics（Tc= 25 unless otherwise specified℃ ）： OFF Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 µA 500 -- -- V ΔBVDSS /ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25 ℃ -- 0.54 -- V/℃ IDSS Drain to Source Leakage Current VDS =500V, V GS= 0V, Ta = 25 ℃ -- -- 1 µA VDS =400 V, VGS= 0V, IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=6.5A -- 0.34 0.45 Ω VGS(TH) Gate Threshold Voltage VDS = V GS, ID = 250 µA 2.0 4.0 V Pulse width tp ≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. gfs Forward Transconductance VDS=15V, ID =6.5A -- 12 -- S Ciss Input Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 2130 -- pF Coss Output Capacitance -- 210 -- Crss Reverse Transfer Capacitance -- 23 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time ID =13A V DD =250V VGS = 10V R G =6.1 Ω -- 14 -- ns tr Rise Time -- 27 -- td(OFF) Turn-Off Delay Time -- 45 -- tf Fall Time -- 36 -- Qg Total Gate Charge ID =13A V DD =250V VGS = 10V -- 45 nC Qgs Gate to Source Charge -- 10 -- Qgd Gate to Drain ( “Miller ”)Charge -- 18 --

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2015V01 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 13 A ISM Maximum Pulsed Current (Body Diode) -- -- 52 A VSD Diode Forward Voltage IS=13A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time IS=13.0A,T j =150 °C dIF/dt=100A/us, -- 506 -- ns Qrr Reverse Recovery Charge -- 4.2 µC Pulse width tp ≤300µs,δ≤2% Symbol Parameter Typ. Units RθJC Junction-to-Case 0.83 /W℃ RθJA Junction-to-Ambient 62 /W℃ a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=6.5mH, I D=14.8A, Start T J=25℃ a3：ISD =13A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 10 2015V01 Test Circuit and Waveform

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2015V01

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2015V01 Package Information ： Items Values(mm) MIN MAX A 10.00 10.60 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 3.30 3.80 L 12.7 14.7 N 2.34 2.74 Q 2.40 3.00 3.50 3.90

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2015V01 The name and content of poisonous and harmful material in products Part’s Name Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE Note ○：means the hazardous material is under the criterion of SJ/T11363-2006. ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Tel: +86 0510-85807228 Fax: +86- 0510-85800864 Marketing Part： Post ：214061 Tel ： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail ：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110