CS150N03

CS150N03A8 HUAJING-MICRO | Alldatasheet

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WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2018V01 ○R Silicon N-Channel Power MOSFET General Description ： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdso n≤3.5 m l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications ： Power switch circuit of adaptor and charger. Absolute （TC= 25℃ unless otherwise specified ） Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 30 V ID Continuous Drain Current 150 A Continuous Drain Current T C = 100 °C 104 A IDM Pulsed Drain Current 600 A VGS Gate-to-Source Voltage ±20 V EAS Avalanche Energy 328 mJ PD Power Dissipation 120.1 W Derating Factor above 25 °C 0.96 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ VDSS 30 V ID（Silicon limited current ） 150 A ID（Package limited ） 90 A PD 120.1 W RDS(ON)Typ 2.4 mΩ

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2018V01 Electrical Characteristics（TC= 25 ℃unless otherwise specified ）： OFF Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 µA 30 -- -- V IDSS Drain to Source Leakage Current VDS =30V, V GS= 0V, Tc = 25 ℃ -- -- 1 µA VDS =24V, VGS= 0V, IGSS(F) Gate to Source Forward Leakage VGS=20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=50A -- 2.4 3.5 mΩ VGS=4.5V,ID=40A -- 5.0 6.5 mΩ VGS(TH) Gate Threshold Voltage VDS = V GS, ID = 250 µA 1.0 1.7 3.0 V Pulse width tp ≤300µs,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. Rg Gate resistance VGS=0V, VDS=0V, f=1MHz -- 0.95 -- Ω Ciss Input Capacitance VGS = 0V V DS =15V f = 1.0MHz -- 7901 -- pF Coss Output Capacitance -- 940 -- Crss Reverse Transfer Capacitance -- 817 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time VGS=10V ，RG=6Ω VDD=15V ，ID=50A -- 30.4 -- ns tr Rise Time -- 30.9 -- td(OFF) Turn-Off Delay Time -- 121 -- tf Fall Time -- 56 -- Qg Total Gate Charge ID =50A V DD =15V VGS = 10V -- 145.8 -- nC Qgs Gate to Source Charge -- 25.3 -- Qgd Gate to Drain ( “Miller ”)Charge -- 34.6 --

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2018V01 ○R CS150N03 A8 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 150 A ISM Maximum Pulsed Current (Body Diode) -- -- 600 A VSD Diode Forward Voltage IS=50A,V GS=0V -- -- 1.2 V trr Reverse Recovery Time di/dt=100A/us IF=50A -- 37 -- ns Qrr Reverse Recovery Charge -- 35 -- nC Pulse width tp ≤300µs,δ≤2% Symbol Parameter Max. Units RθJC Junction-to-Csae 1.04 ℃/W RθJA Junction-to-Ambient 62.5 ℃/W a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=0.1mH,Ias=81A Start T J=25℃

Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2018V01 ○R CS150N03 A8 Package Information ： *adjustable Items Values(mm) MIN MAX A 9.60 10.6 B 15.0 16.0 B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L* 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 3.50 3.90

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2018V01 ○R CS150N03 A8 The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP Limit ≤0.1% ≤0.1% 0.01% Note ○：Means the hazardous material is under the criterion of 2011/65/EU. ×：Means the hazardous material exceeds the criterion of 2011/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Tel: +86 0510-85807228 Fax: +86- 0510-85800864 Marketing Part： Post ：214061 Tel ： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110