CS2N60FA9H HUAJING-MICRO | Alldatasheet

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Silicon N-Channel Power MOSFET CS2N60F A9H WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012 ○R Huajing Discrete Devices General Description ： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l L ow Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute （Tc= 25℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 600 V Continuous Drain Current 2.0 A ID Continuous Drain Current T C = 100 °C 1.45 A IDM Pulsed Drain Current 8.0 A VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 80 mJ EAR Avalanche Energy ,Repetitive 6.4 mJ IAR a1 Avalanche Current 1.1 A dv/dt a3 Peak Diode Recovery dv/dt 5 V/ns Power Dissipation 24 W PD Derating Factor above 25 °C 0.192 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ VDSS 600 V ID 2 A PD (TC=25℃) 24 W RDS(ON)Typ 3.6 Ω

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2012 ○R CS2N60F A9H Huajing Discrete Devices Electrical Characteristics（Tc= 25℃ unless otherwise specified ）： OFF Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250 µA 600 -- -- V ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference2 5℃ -- 0.6 -- V/℃ VDS = 600V, V GS= 0V, Ta = 25 ℃ -- -- 1 IDSS Drain to Source Leakage Current VDS =480V, V GS= 0V, Ta = 125 ℃ 100 µA IGSS(F) Gate to Source Forward Leakage VGS= 30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=1.0A -- 3.6 4.5 Ω VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 4.0 V Pulse width tp ≤380µs,δ≤2% Dynamic Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units gfs Forward Transconductance VDS=15V, ID =1.0A 1.8 -- S Ciss Input Capacitance -- 280 Coss Output Capacitance -- 31 Crss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 5.4 pF Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units td(ON) Turn-on Delay Time -- 7 -- tr Rise Time -- 5 -- td(OFF) Turn-Off Delay Time -- 26 -- tf Fall Time ID =2.0A V DD = 300V VGS = 10V R G = 9.1 Ω -- 10.5 -- ns Qg Total Gate Charge -- 8.5 Qgs Gate to Source Charge -- 1.5 Qgd Gate to Drain ( “Miller”)Charge ID =2.0A V DD =300V VGS = 10V -- 4.0 nC

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2012 ○R Huajing Discrete Devices CS2N60F A9H Source-Drain Diode Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- 2 A ISM Maximum Pulsed Current (Body Diode) -- -- 8 A VSD Diode Forward Voltage IS=2.0A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time -- 407 -- ns Qrr Reverse Recovery Charge IS=2.0A,T j = 25 °C dIF/dt=100A/us, VGS=0V -- 1152 -- nC Pulse width tp ≤380µs,δ≤2% Symbol Parameter Typ. Units RθJC Junction-to-Case 3.57 ℃/W RθJA Junction-to-Ambient 100 ℃/W a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=10.0mH, I D=4A, Start T J=25℃ a3：ISD =2A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 10 2012 ○R Huajing Discrete Devices CS2N60F A9H TestCircuitandWaveform

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2012 ○R Huajing Discrete Devices CS2N60F A9H

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2012 ○R Huajing Discrete Devices CS2N60F A9H Package Information ： Values(mm) Items MIN MAX A 9.60 10.40 B 15.40 16.20 C 4.40 4.90 C1 2.10 2.60 D 2.50 2.90 E 0.70 0.90 F 0.35 0.55 G 1.12 1.42 H 3.40 3.80 L 12.00 14.00 N 2.34 2.74 3.00 3.30

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2012 ○R Huajing Discrete Devices CS2N60F A9H The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE Note ○：means the hazardous material is under the criterion of SJ/T11363-2006. ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. UTH Tel: +86 0510-85807228 Fax: +86- 0510-85800864 Marketing Part： Post： 214061 Tel ： +86 0510-81805277/81805336 Fax: +86 0510-85800360/85803016 E-mail ：sales@hj.crmicro.com Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110