CS4145

CS4145A8H HUAJING-MICRO | Alldatasheet

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Silicon N-Channel Power MOSFET CS4145 A8H WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2011 ○R Huajing Discrete Devices General Description ： CS4145 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features ： l TrenchFET Power MOSFET l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge (Typical Data:82nC) l Low Reverse transfer capacitances(Typical:260pF) l 100% Single Pulse avalanche energy Test Applications ： UPS,DC Motor Control and Class D Amplifier. Absolute （Tc= 25 ℃ unless otherwise specified ）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current 84 A ID Continuous Drain Current T C = 100 °C 60 A IDM Pulsed Drain Current 336 A VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 400 mJ EAR Avalanche Energy ,Repetitive 40 mJ IAR a1 Avalanche Current 3 A dv/dt a3 Peak Diode Recovery dv/dt 5 V/ns Power Dissipation 200 W PD Derating Factor above 25 °C 1.33 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 175 ，–55 to 175 ℃ TL MaximumTemperature for Soldering 300 ℃ VDSS 60 V ID 84 A PD(TC=25℃) 200 W RDS(ON)Typ 8.5 mΩ

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 10 2011 ○R CS4145 A8H Huajing Discrete Devices Electrical Characteristics（Tc= 25 ℃ unless otherwise specified ）： OFF Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max Units VDSS Drain to Source Breakdown Voltage VGS =0V, I D=250 µA 60 -- -- V Δ BVDSS / Δ TJ Bvdss Temperature Coefficient ID=250uA,Reference2 5℃ -- 0.15 -- V/℃ VDS = 60V, V GS = 0V, Ta = 25 ℃ -- -- 1 IDSS Drain to Source Leakage Current VDS =48V, V GS = 0V, µA IGSS(F) Gate to Source Forward Leakage VGS =+20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA ON Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units RDS(ON) Drain-to-Source On-Resistance VGS =10V,I D=42A -- 8.5 10 mΩ VGS(TH) Gate Threshold Voltage VDS = V GS , I D = 250 µA 2 4 V Pulse width tp ≤380 µs,δ≤2% Dynamic Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units gfs Forward Transconductance VDS =30V, I D =84A -- 65 -- S Ciss Input Capacitance -- 5785 -- Coss Output Capacitance -- 375 -- Crss Reverse Transfer Capacitance VGS = 0V V DS =25V f = 1.0MHz -- 260 -- pF Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units td(ON) Turn-on Delay Time -- 18 -- tr Rise Time -- 75 -- td(OFF) Turn-Off Delay Time -- 54 -- tf Fall Time ID =42A V DD =30V VGS = 10V R G =4.7 Ω -- 32 -- ns Qg Total Gate Charge -- 82 -- Qgs Gate to Source Charge -- 30 -- Qgd Gate to Drain ( “Miller ”)Charge ID =84A V DD =30V VGS = 10V -- 22 -- nC

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H Source-Drain Diode Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- 84 A ISM Maximum Pulsed Current (Body Diode) -- -- 336 A VSD Diode Forward Voltage IS =84A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time -- 65 -- ns Qrr Reverse Recovery Charge IS =84A,T j = 25 °C dIF/dt=100A/us, VGS =0V -- 120 -- nC Pulse width tp ≤380 µs,δ≤2% Symbol Parameter Typ. Units RθJC Junction-to-Case 0.75 ℃/W RθJA Junction-to-Ambient 62 ℃/W a1 ：Repetitive rating; pulse width limited by maximum junction temperature a2 ：L=0.27mH, I D=54A, Start T J=25 ℃ a3 ：ISD =84A,di/dt ≤100A/us,V DD ≤BV DS, Start T J=25 ℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H Characteristics Curve：

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H TestCircuitandWaveform

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H

Package Information

Values(mm) Items MIN MAX A 10.10 10.50 B 15.0 16.0 B1 8.30 9.10 C 4.30 4.80 C1 2.30 3.00 D 1.20 1.40 E 0.70 0.90 F 0.35 0.55 G 1.17 1.37 H 3.30 3.80 L 12.7 14.7 N 2.34 2.74 Q 2.40 3.00 3.70 3.90

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 10 of 10 2011 ○R Huajing Discrete Devices CS4145 A8H The name and content of poisonous and harmful material in products hazardous substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE Molding Compound Note ○：means the hazardous material is under the criterion of SJ/T11363-2006. ×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s ROHS. Warnings 1. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD Tel: 0510-85807228 Fax: 0510-85800864 Marketing Part： Post ：214061 Tel / Fax ：0510-85807228-3663/5508 E-mail ：sales@crhj.com.cn 0510-85800360 （Fax） Application and Service：Post：214061 Tel / Fax ：0510-85807228-3399 / 2227 E-mail：apply@crhj.com.cn