CNY70 SYC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 10

Technical content

Reflective Optical Sensor with Transistor Output

DESCRIPTION

The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light.

FEATURES

  • Package type: leaded
  • Detector type: phototransistor
  • Dimensions (L x W x H in mm): 7 x 7 x 6
  • Peak operating distance: < 0.5 mm
  • Operating range within > 20 % relative collector current: 0 mm to 5 mm
  • Typical output current under test: I C = 1 mA
  • Emitter wavelength: 950 nm
  • Daylight blocking filter
  • Lead (Pb)-free soldering released
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • Optoelectronic scanning and switching devices i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies).Notes (1) CTR: current transfere ratio, Iout/Iin (2) Conditions like in table basic charactristics/sensors Note (1) MOQ: minimum order quantity ED Top view Marking area 19158_1 21835 PRODUCT SUMMARY PART NUMBER DISTANCE FOR MAXIMUM CTRrel (1) (mm) DISTANCE RANGE FOR RELATIVE Iout > 20 % (mm) TYPICAL OUTPUT CURRENT UNDER TEST (2) (mA) DAYLIGHT BLOCKING FILTER INTEGRATED CNY70 0 0 to 5 1 Yes

ORDERING INFORMATION

ORDERING CODE PACKAGING VOLUME (1) REMARKS CNY70 Tube MOQ: 4000 pcs, 80 pcs/tube - ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T amb ≤ 25 °C P tot 200 mW Ambient temperature range T amb - 40 to + 85 °C Storage temperature range T stg - 40 to + 100 °C Soldering temperature Distanc e to case 2 mm, t £ 5 s T sd 260 °C INPUT (EMITTER) Reverse voltage V R 5V Forward current I F 50 mA Forward surge current t p ≤ 10 μs I FSM 3A Power dissipation T amb ≤ 25 °C P V 100 mW Junction temperature T j 100 °C CNY70 OPTO A TRAN REFLECTIVO www.sycelectronica.com.ar

www.vishay.com Vishay Semiconductors Rev. 1.8, 30-Jul-12 2 Document Number: 83751 ABSOLUTE MAXIMUM RATINGS Fig. 1 - Power Dissipation vs. Ambient Temperature Notes (1) Measured with the “Kodak neutral test card”, white side with 90 % diffuse reflectance (2) Measured without reflecting medium OUTPUT (DETECTOR) Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7V Collector current I C 50 mA Power dissipation T amb ≤ 25 °C P V 100 mW Junction temperature T j 100 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 100 200 300 95 11071 P - Power Dissipation (mW) Tamb - Ambient Temperature (°C) IR - diode Coupled device Phototransistor 25 50 75 100 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector current V CE = 5 V, IF = 20 mA, d = 0.3 mm (figure 1) IC (2) 0.3 1.0 mA Cross talk current V CE = 5 V, IF = 20 mA, (figure 2) I CX (3) 600 nA Collector emitter saturation voltage IF = 20 mA, IC = 0.1 mA, d = 0.3 mm (figure 1) VCEsat (2) 0.3 V INPUT (EMITTER) Forward voltage I F = 50 mA V F 1.25 1.6 V Radiant intensity I F = 50 mA, tp = 20 ms I e 7.5 mW/sr Peak wavelength I F = 100 mA λP 940 nm Virtual source diameter Method: 63 % encircled energy d 1.2 mm OUTPUT (DETECTOR) Collector emitter voltage I C = 1 mA V CEO 32 V Emitter collector voltage I E = 100 μA V ECO 5V Collector dark current V CE = 20 V, IF = 0 A, E = 0 lx I CEO 200 nA www.sycelectronica.com.ar

www.vishay.com Vishay Semiconductors Rev. 1.8, 30-Jul-12 3 Document Number: 83751 Fig. 2 - Test Condition BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 5 - Collector Current vs. Forward Current Fig. 6 - Collector Current vs. Collector Emitter Voltage ~~~ ~~~ AC EC Detector Emitter d 95 10893 Reflecting medium (Kodak neutral test card) 0.1 100 1000 VF - Forward Voltage (V)96 11862 IF - Forward Current (mA) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 96 11913 CTR - Relative Current Transfer Ratiorel T amb - Ambient Temperature (°C) - 30 V = 5 V CE I = 20 mA F d = 0.3 mm 50403020100-10- 20 807060 0.1 0.001 0.01 0.1 I - Collector Current (mA) C I F - Forward Current (mA) 95 11065 Kodak neutral card (white side) d = 0.3 mm V CE = 5 V 100 101 V CE - Collector Emitter Voltage (V)95 11066 I F = 50 mA 20 mA 10 mA 5 mA 2 mA 1 mA 0.1 0.001 0.01 0.1 I - Collector Current (mA)C Kodak neutral card (white side) d = 0.3 mm 100101 www.sycelectronica.com.ar

www.vishay.com Vishay Semiconductors Rev. 1.8, 30-Jul-12 4 Document Number: 83751 Fig. 7 - Current Transfer Ratio vs. Forward Current Fig. 8 - Current Transfer Ratio vs. Collector Emitter Voltage Fig. 9 - Collector Current vs. Distance Fig. 10 - Relative Radiant Intensity/Collector Current vs. Angular Displacement Fig. 11 - Relative Collector Current vs. Displacement 0.1 100 0.1 I F - Forward Current (mA)96 11914 CTR - Current Transfer Ratio (%) Kodak neutral card (white side) d = 0.3 mm V CE =5V 10010 1 0.1 V CE - Collector Emitter Voltage (V)96 12001 CTR - Current Transfer Ratio (%) 20 mA 10 mA 5 mA 2 mA 1 mA I F = 50 mA Kodak neutral card (white side) d = 0.3 mm 0.1 1 10 100 0.001 0.1 I - Collector Current (mA)C d - Distance (mm)95 11069 V CE = 5 V I F = 20 mA d 10 86 42 I - Relative Radiant Intensityerel 95 11063 0.6 0.9 0.8 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 I - Relative Collector Currentcrel 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 s - Displacement (mm) 96 11915 V CE = 5 V I F = 20 mA I - Relative Collector CurrentCrel d = 5 mm 4 mm 3 mm 2 mm 1 mm ED D E 1.5 d s 5 mm 10 mm s 5 mm 10 mm 1110987654321 www.sycelectronica.com.ar

www.vishay.com Vishay Semiconductors Rev. 1.8, 30-Jul-12 5 Document Number: 83751 PACKAGE DIMENSIONS in millimeters TUBE DIMENSIONS in millimeters 95 11345 20291 www.sycelectronica.com.ar

www.vishay.com Rev. 1.1, 02-Jul-09 1 Packaging and Ordering Information Packaging and Ordering Information Vishay Semiconductors Notes (1) MOQ: minimum order quantity (2) Please refer to datasheets TUBE SPECIFICATION FIGURES Fig. 1 PART NUMBER MOQ (1) PCS PER TUBE TUBE SPEC. (FIGURE) CONSTITUENTS (FORMS) CNY70 4000 80 1 28 TCPT1300X01 2000 Reel (2) 29 TCRT1000 1000 Bulk - 26 TCRT1010 1000 Bulk - 26 TCRT5000 4500 50 2 27 TCRT5000L 2400 48 3 27 TCST1030 5200 65 5 24 TCST1030L 2600 65 6 24 TCST1103 1020 85 4 24 TCST1202 1020 85 4 24 TCST1230 4800 60 7 24 TCST1300 1020 85 4 24 TCST2103 1020 85 4 24 TCST2202 1020 85 4 24 TCST2300 1020 85 4 24 TCST5250 4860 30 8 24 TCUT1300X01 2000 Reel (2) 29 TCZT8020-PAER 2500 Bulk - 22 15198 www.sycelectronica.com.ar

www.vishay.com For technical questions, contact: Document Number: 80112 2 Rev. 1.1, 02-Jul-09 Packaging and Ordering Information Vishay Semiconductors Packaging and Ordering Information Fig. 2 Fig. 3 15210 15201 www.sycelectronica.com.ar

www.vishay.com Rev. 1.1, 02-Jul-09 3 Packaging and Ordering Information Packaging and Ordering Information Vishay Semiconductors Fig. 4 Fig. 5 15199 15202 www.sycelectronica.com.ar

Document Number: 80112 4 Rev. 1.1, 02-Jul-09 Packaging and Ordering Information Vishay Semiconductors Packaging and Ordering Information Fig. 6 Fig. 7 15196 15195 www.sycelectronica.com.ar

Document Number: 80112 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.1, 02-Jul-09 5 Packaging and Ordering Information Packaging and Ordering Information Vishay Semiconductors Fig. 8 20257 www.sycelectronica.com.ar