CHZ015A-QEG

CHZ015A-QEG UMS | Alldatasheet

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Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 15W L-Band Driver GaN HEMT on Sic in SMD leadless package

Description

The CHZ015A-QEG is an input matched packaged Gallium Nitride Hi gh Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5µm gate length GaN HEMT process . It is based on Quasi MMIC technology. It is supplied in RoHS compliant SMD package. Main Features VDS = 45V, ID_Q = 100mA, Pin = 28dBm Pulsed mode (25µs-10%) Performances on the connector access planes ■ Wide band capability: 1.2 - 1.4GHz ■ Pulsed operating mode ■ High power: > 15W ■ High PAE: up to 55% ■ DC bias: VDS=45V @ I D_Q=100mA ■ Low cost package: 24L-QFN4x5 ■ MTTF > 106 hours @ Tj=200°C Main Electrical Characteristics Tamb.= +25°C, pulsed mode Symbol Parameter Min Typ Max Unit Freq Frequency range 1.2 1.4 GHz GSS Small Signal Gain 18 19.5 dB POUT Output Power 39.5 41.5 43 dBm PAE Max Power Added Efficiency 45 55 % IdSAT Saturated Drain Current 650 mA

CHZ015A-QEG 15W L-Band Driver Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 2/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended DC Operating Ratings Tamb.= +25°C Symbol Parameter Min Typ Max Unit Conditions VDS Drain to Source Voltage 20 45 50 V VGS_Q Gate to Source Voltage -1.9 V VDS=45V, ID_Q=100mA ID_Q Quiescent Drain Current 100 350 mA VDS=45V ID_MAX Drain Current 650 (1) mA VDS=45V, Compressed mode IG_MAX Gate Current (forward mode) 0 8 mA Compressed mode PW Pulse width 1.5 ms DC Duty cycle 10 % Tj_MAX Junction temperature 200 °C (1) Limited by dissipated power. DC Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Conditions VP Pinch-Off Voltage -3 -2 -1 V VDS=45V, ID=IDSS/100 ID_SAT (2) Saturated Drain Current 2.7 A VDS=7V, VG=2V (1) IG_leak Gate Leakage Current (reverse mode) -1 mA VD=45V, VG=-7V (1) VBDS Drain-Source Break-down Voltage

200 V VG=-7V (1)

RTH Thermal Resistance 5.5 °C/W 1ms – 10% (1) Parameters extrapolated from unit cell measurement. (2) For information, limited by ID_MAX , see on Absolute Maximum Ratings.

15W L-Band Driver CHZ015A-QEG Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 3/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 RF Characteristics (1) Tamb.= +25°C, pulsed mode (2), on board 61501358(1), VDS=45V, ID_Q=100mA Symbol Parameter Min Typ Max Unit Freq Frequency range 1.2 1.4 GHz GSS Small Signal Gain 18 19.5 dB dGSS Small Signal Gain flatness +/-0.3 dB PSAT Saturated Output Power 39.5 41.5 43 dBm PAE Power Added Efficiency 45 55 % IDSAT Saturated Drain Current 650 mA Rlin Input Return Loss -12 -10 dB (1) Measured on evaluation board 61501358 on the connector access planes. (2) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs offset between RF and DC pulse.

CHZ015A-QEG 15W L-Band Driver Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 4/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Absolute Maximum Ratings Symbol Parameter Rating Unit Note VDS Drain-Source Voltage -0.5, +60 V VGS_Q Gate-Source Voltage -10, +2 V (4), (6) IG_MAX Maximum Gate Current in forward mode 25 mA IG_MIN Maximum Gate Current in reverse mode -4 mA ID_MAX Maximum Drain Current 2 A (4) PIN Maximum Input Power 32 dBm (5) PW_MAX Pulse width 3 ms DC_MAX Duty cycle 20 % Top Operating temperature range -40 to +85 °C Tj Junction Temperature 220 °C TSTG Storage Temperature -55 to +150 °C (1) Operation by this device above anyone of these parame ters may cause permanent damage. (2) Duration < 1s. (3) The given values have not to be exceeded at the same time even momentarily for any parameter, since each parameter is independent from each other, otherwise deterioration or destruction of the device may take place. (4) Max junction temperature has to be considered. (5) Linked to and limited by IG_MAX & IG_MIN values. (6) VGS_Q max limited by ID_MAX and IG_MAX values. Simulated Source and Load Impedance VDS = 45V, ID_Q = 100mA Frequency (GHz) Source Load Typical [1.2-1.4] 50 - j0 54.0 + j29.6 These values are defined at the package interface with PCB. ZloadZsource

15W L-Band Driver CHZ015A-QEG Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 5/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Package Sij parameters (simulation) Tamb.= +25°C, CW mode, VDS=45V, ID_Q=100mA Freq (GHz) S11 (dB) PhS11 (°) S12 (dB) PhS12 (°) S21 (dB) PhS21 (°) S22 (dB) PhS22 (°)

CHZ015A-QEG 15W L-Band Driver Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 6/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Performance on Evaluation Board (ref 61501358) Calibration and measurements are done on the connector access planes of the evaluation boards. Tamb.= +25°C, pulsed mode (1), VDS=45V, ID_Q=100mA Pout, PAE, Gain & Id @ 1.3GHz Pout, PAE & Gain @ Pin=28dBm (1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs offset between DC and RF pulse.

15W L-Band Driver CHZ015A-QEG Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 7/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Performance on Evaluation Board (ref 61501358) Calibration and measurements are done on the connector access planes of the evaluation boards. Tamb.= +25°C, pulsed mode (1), VDS=45V, ID_Q=100mA S parameters versus frequency (1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs offset between DC and RF pulse.

CHZ015A-QEG 15W L-Band Driver Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 8/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Performance in Temperature (on evaluation board) Calibration and measurements are done on the connector access planes of the evaluation boards (ref 61501358). Tamb.= -40°C, +25°C, +85°C, pulsed mode (1), VDS=45V, Vgs fixed (ID_Q=100mA @ +25°C) Pout, PAE, Gain & Id @ 1.3GHz & -40°C Pout, PAE, Gain & Id @ 1.3GHz & +85°C (1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs offset between DC and RF pulse.

15W L-Band Driver CHZ015A-QEG Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 9/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Performance in Temperature (on evaluation board) Calibration and measurements are done on the connector access planes of the evaluation boards (ref 61501358). Tamb.= -40°C, +25°C, +85°C, pulsed mode (1), VDS=45V, ID_Q=100mA (fixed @ +25°C) Linear Gain versus temperature with ID_Q fixed @ +25°C (100mA) Input Return Loss versus temperature with ID_Q fixed @ +25°C (100mA) (1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs offset between DC and RF pulse.

CHZ015A-QEG 15W L-Band Driver Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 10/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Demonstration Amplifier Low Frequency Equivalent Schematic (ref 61501358) Demonstration Amplifier (ref 61501358) / Bill of Materials Designator Type Value - Description Qty L1 Inductor for output pre-matching 3.6nH, +/- 5%, 0603 1 L2 Inductor 22nH, +/- 5.2%, 0908 1 C1 Capacitor 10pF, +/- 5%, 0603 2 C2 Capacitor 120pF, +/- 5%, 0805 1 C3 Capacitor 220pF, +/- 5%, 0805 1 C4 Capacitor 1nF, +/- 5%, 0805 2 C5 Capacitor 1µF, +/- 10%, 1210 1 C6 Capacitor 68µF, +/- 20%, H13 1 R1 Jumper Jumper 0 Ω, 0603 1 R2 Resistor 3Ω, +/- 1%, 0603 1 J1 Connector SMD 3 contacts 1 J2 Connector SMD 5 contacts 1 J3 Connector SMA 2 Q1 Driver CHZ015A-QEG 1 - PCB RO4003, Er=3.55, h=508µm -

15W L-Band Driver CHZ015A-QEG Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 11/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Amplifier Demonstration Board (ref 61501358) OUT IN

CHZ015A-QEG 15W L-Band Driver Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 12/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Amplifier Demonstration Board (ref 61501358)

15W L-Band Driver CHZ015A-QEG Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 13/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Package outline (1) Matt tin, Lead Free (Green) 1- Nc 9- OUT 17- Nc Units : mm 2- DC 10- Nc 18- GND (2) From the standard : JEDEC MO-220 3- Nc 11- OUT 19- Nc (VGHD) 4- Nc 12- Nc 20- Nc 25- GND 5- GND (2) 13- Nc 21- GND (2) 6- GND (2) 14- GND (2) 22- IN 7- Nc 15- Nc 23- GND (2) 8- Nc 16- Nc 24- Nc (1) The package outline drawing included in this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. (3) The temperature is monitored at the package back-side interface (Tcase) as shown above. Tcase (3) (°C)

CHZ015A-QEG 15W L-Band Driver Ref. : DSCHZ015A-QEG3354 - 20 Dec 13 14/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products.

Ordering Information

QFN 4x5 package: CHZ015A-QEG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent righ ts of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.