CHV2411AQDG UMS | Alldatasheet
Document overview
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Technical content
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 1/10 Specific ations subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC In QFN package
Description
The CHV2411a-QDG is a monolithic multifunction for frequency generation. It integrates a X-band “push-push” oscillator with frequency control (VCO) thanks to base- collector diodes, used as varactors, a K-band buffer amplifiers and a divider by 8. The VCO is fully integrated on HBT process. All the active devices are internally self biased. The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. The chip is delivered in a 24 Leads RoHS compliant QFN4x4 package. Main Features /square6 K-band VCO+K-band buffers+Prescalar/8 /square6 Fully integrated VCO (no need for external Resonator /square6 Low phase noise /square6 High temperature range /square6 High frequency stability /square6 On chip self biased devices /square6 Standard SMD package : 24L-QFN4x4 Main Characteristics Symbol Parameter Min Typ Max Unit F_out Specified output frequency range 24 24.125 24 .25 GHz F_vco Oscillator frequency F_out/2 GHz IF_out Output Intermediate frequency F_out/16 GHz Pout Output power at F_out 13 16 dBm PFI Output power at Intermediate frequency (IF) -3 0 dBm PN SSB Phase Noise @ F_out @ 100 kHz -90 -80 dBc/H z ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 2/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
VCO & buffer Part Symbol Parameters Min Typ Max Unit F_out Output Frequency range (Operating band) 24 2 4.25 GHz F_vco VCO frequency F_out/2 V_Tune Voltage Tuning range 1 6 V Tuning sensitivity 250 400 725 MHz/V Frequency drift rate 5 MHz/° C H1 Harmonics ½ F_out -20 dBc H3 Harmonics 3/2 F_out -40 dBc H4 Harmonics 2 F_out -20 dBc PN SSB Phase Noise given @ F_out @ 100 KHz -90 -80 dBc/Hz Main Output (RF_Out) VSWR 2:1 Pulling into 2:1 VSWR for all phases 8 MHz Pushing @ within the V_tune range 250 MHz/V P_out Output Power on RF_out port 13 16 19 dBm Positive supply current 140 170 mA Prescalar Part Symbol Parameters Min Typ Max Unit IF_out IF Output Frequency F_out/16 GHz Output Power -3 0 dBm Positive supply current 80 110 mA Prescalar Output (IF) VSWR 2:1 General Symbol Parameters Min Typ Max Unit VB,V1,VB1,V2,V B2,VD Positive supply voltage 5 V (IB1+IB2+I1+I2) Total Positive supply current 220 280 mA Top Operating temperature range -40 +100 ° C All the parameters are specified between 1V and 6V of Tuning Voltage Remark : The minimum and maximum values take into account the spread due to the operating temperature and process spread. These performance has been obtained with the chip in QFN package assembled on the recommended boards (ref. 96348 B) described in this document. These performances are highly dependent on this environment. Absolute Maximum Ratings (1) Symbol Parameters Values Unit V_tune Positive Tuning voltage 10 V +V Positive supply voltage 6 V +ID Positive supply current (Prescalar) 120 mA +IB1 / +IB2 Positive supply current (buffers 2 & 3) 50 / 55 mA +I1 / +I2 Positive supply current (VCO+ buffer 1) 3 5 / 50 mA +IB Positive supply current (prescalar‘s buffer) 15 mA Top Operating temperature range (2) -40 to +100 ° C Tstg Storage temperature range -55 to +125 ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s (2) temperature of the back side of the QFN package
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 3/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical QFN measurements on board 95791 (QFN plan) Remark : The temperature mentioned below is taken at the back side of the QFN package. T=100° C T=25° C T= - 40° C T=100° C T=25° C T= - 40° C T=100° C T=25° C T= - 40° C T=100° C T=25° C T= - 40° C Sensitivity versus Vtune Output Frequency versus Vtune
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 4/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 T=100° C T=25° C T= - 40° C T=100° C T=25° C T= - 40° C T=100° C T=25° C T= - 40° C T=100° C T=25° C T= - 40° C IF Output Power versus Vtune Output Power @24GHz versus Vtune
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 5/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 @ 10 kHz from Carrier T=25° C Phase Noise vs Tuning Voltage @ 100 kHz from Carrier @ 10 kHz from Carrier T=25° C Phase Noise vs Tuning Voltage @ 100 kHz from Carrier -130,00 -120,00 -110,00 -100,00 -90,00 -80,00 -70,00 -60,00 -50,00 -40,00 -30,00 -20,00 -10,00 0,00 1,00 10,00 100,00 1000,00 Offset Frequency from Carrier (kHz) P h a s e N o is e (d B c /H z) 100°C 100°C 100°C 100°C Phase Noise vs Offset frequency from carrier Over Operating Tuning Range -130,00 -120,00 -110,00 -100,00 -90,00 -80,00 -70,00 -60,00 -50,00 -40,00 -30,00 -20,00 -10,00 0,00 1,00 10,00 100,00 1000,00 Offset Frequency from Carrier (kHz) P h a s e N o is e (d B c /H z) 100°C 100°C 100°C 100°C -130,00 -120,00 -110,00 -100,00 -90,00 -80,00 -70,00 -60,00 -50,00 -40,00 -30,00 -20,00 -10,00 0,00 1,00 10,00 100,00 1000,00 Offset Frequency from Carrier (kHz) P h a s e N o is e (d B c /H z) 100°C 100°C 100°C 100°C Phase Noise vs Offset frequency from carrier Over Operating Tuning Range Phase Noise versus Offset frequency from carrier Phase Noise versus Vtune
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 6/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 QFN Outline
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 7/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 QFN Pin-out description Pin number Pin name Symbol Name Description 15,17 GND Ground 2 P IF_out IF output at 1.5 GHz
4 VT V_Tune Frequency Tuning Port
5,11,13,20,21,23 VB, V1, VB1, VB2,V2, VD +V Positive supply voltage
5 VB Positive supply voltage of 12 GHz prescalar’s buffer
11,21 V1,V2 Positive supply voltage of the VCO core+1 st stage of the 24GHZ buffers
13 VB1 Positive supply voltage of the 2
& 3 rd stages of the 24GHZ buffers
20 VB2 Positive supply voltage of the 4
23 VD Positive supply voltage of the Prescalar
16 RF F_out RF output at 24 GHz
2 P F_out/16 Prescalar output at 1.5 GHz 19,22,24 Nc Not connected External Components and bias configuration (recommended) Important: Need for a capacitor on the prescalar output port as a DC block (C2).
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 8/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Recommended Test Fixture (Ref. 96348 B) for measurements over Temperature Range
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 9/10 Specific ations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 ESD sensitivity Norm Value MIL-STD-1686C HBM Class 1 (<1000V) ESD STM5.1-1998 HBM Class 0 (<250V)
Package Information
Package body material RoHS-compliant Low stress Injection Molded Plastic Lead finish 100% matte Sn MSL Rating MSL1 Recommended surface mount package assembly (see UMS AN0017) For volume production the SMD type package can be treated as a standard surface mount component (please refer to the IPC/JEDEC J-STD-020C standard or equivalent). The assembly on the motherboard can be performed using a standard assembly process (e.g. stencil solder printing, standard pick-and-place machinery, and solder reflow oven). However, caution should be taken to perform a good and reliable contact over the whole pad area. MAXIMUM RECOMMENDED REFLOW PROFILE for LEADFREE SMT ASSEMBLY PRODUCTS 100 120 140 160 180 200 220 240 260 280 300 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360 Time (s) Temperature (° C) 150 217 255 Maximum Ramp up rate : 3° C / second 30s Max Attention: The solder thickness after reflow should be typical 50µm [2 mils] and the lateral alignment between the package and the motherboard should be within 50µm [2 mils]. It is important for the performance of the product that the whole overlapping area between the motherboard and package pads is connected. Voids or other improper connections, in particular, between the ground pads on motherboard and package will lead to a deterioration of the RF performance and the heat dissipation. The latter effect can reduce drastically reliability and lifetime of the product.
Ref. : DSCHV2411aQDG7254 - 11 Sept 07 10/10 Specifi cations subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Ordering Information
24L-QFN4x4 Lead Free Package : CHV2411aQDG/XY Stick: XY=20 Tape and reel: XY=21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.