CHV2240

CHV2240 UMS | Alldatasheet

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Technical content

Ref. :DSCHV22400096 -05-Apr-00 1/8 Specifications subject to change without notice united monolithic semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Multifunction : K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC

Description

The CHV2240 is a monolithic multifunction proposed for frequency generation at 38GHz. It integrates a K-band Voltage Controlled Oscillator, a Q-band frequency multiplier and buffer amplifiers. For performance optimisation, an external port (ERC) allows a passive resonator coupling to the oscillator (at half output frequency). This chip has been especially designed to be coupled to a high Q dielectric resonator. All the active devices are internally self biased. The circuit is manufactured with the P- HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features /G6e K-band VCO + Q-band frequency multiplier /G6e External resonator for centre frequency control and phase noise optimisation /G6e High quality oscillator when coupled to a dielectric resonator /G6e On-chip varactor for electronic control /G6e Chip size 2.68x1.4 x 0.1 mm (F_out) HIGH Q HIGH Q HIGH Q HIGH Q RESONATORRESONATORRESONATORRESONATOR F_out/2 RF_out V_tune +V -V ERC Multifunction block diagram 38,19 38,192 38,194 38,196 38,198 38,2 38,202 38,204 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 Vtune (V) Output frequency (GHz) Typical tuning characteristic Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit F_out Output frequency 37.5 38.25 39 GHz F_t Frequency tuning range (high Q resonator) 5 MHz Pn Oscillator phase noise @ 100kHz (38GHz) -100 dBc/Hz Pout Output power 9 dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! T=+100°C T=-40°C T=+25°C

CHV2240 K-band VCO / Q-band Multiplier Ref. :DSCHV22400096 -05-Apr-00 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Full temperature range, used according to section “Typical assembly and bias configuration” Symbol Parameter Min Typ Max Unit F_out Output frequency 37.5 38.25 39 GHz F_osc Oscillator frequency (1) F_out/2 F_stab Frequency stability (1) , (2) 4 ppm/°C Pn Phase noise @ 100kHz @ 38GHz (2) -100 dBc/Hz P_out Output power 6 9 dBm F_t Frequency tuning range (2) 5 MHz Vt Voltage tuning range 0-2 V I_vt Tuning current 0.5 mA VSWR_out VSWR at output port 2:1 +V Positive supply voltage 4.4 4.5 4.6 V +I Positive supply current 120 180 mA -V Negative supply voltage -4.6 -4.5 -4.4 V -I Negative supply current 3 10 mA Top Operating temperature range -40 +100 °C (1) The centre frequency is given by the external passive resonator (2) This characteristic is obtained by using an external dielectric resonator (see section “Proposed External High Q resonator”) Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit P_erc RF input power on ERC port (2) 13 dBm +V Positive supply voltage 5 V -V Negative supply voltage -5 V +I Positive supply current 200 mA -I Negative supply current 10 mA Top Operating temperature range -40 to +100 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s

K-band VCO / Q-band Multiplier CHV2240 Ref. :DSCHV22400096 -05-Apr-00 dd-Mmm-yy 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Mechanical Data and Pin References 4 5 6 7 8 9 10 11 12 13 14 Unit = µm External chip size (layout size + dicing streets) = 2680 x 1400 Chip thickness = 100 +/- 10 HF Pads (2, 16) = 68 x 118 DC/IF Pads = 100 x 100 ♦ Pin number Pin name Description 1,3,15,17 Ground : should not be bonded. If required, please ask for more information. 2E R C External Resonator Coupling Port 4V t Tuning voltage 5,13 NC 6,7,8 -V Negative supply voltage (connected together) 9,10,11,12 +V Positive supply voltage (connected together)

14 GND Ground (optional)

16 RF_out RF output

CHV2240 K-band VCO / Q-band Multiplier Ref. :DSCHV22400096 -05-Apr-00 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Assembly and Bias Configuration 4 5 6 7 8 9 10 11 12 13 14 -V +V DC/IF lines >= 120pF >= 120pF Vt L_erc µ-strip line L_out µ-strip line This drawing shows an example of assembly and bias configuration. All the transistors are internally self biased. For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to be according to the following recommendation. Port Equivalent inductance (nH) Approximated wire length (mm) ERC (2) L_erc = 0.4 0.5 RF_out (16) L_out = 0.4 0.5 For a micro-strip configuration a hole in the substrate is recommended for chip assembly.

K-band VCO / Q-band Multiplier CHV2240 Ref. :DSCHV22400096 -05-Apr-00 dd-Mmm-yy 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Proposed external high Q resonator This chip has been especially designed to be coupled to a high Q dielectric resonator. The resonance is given by a dielectric cylinder coupled to a 50Ω line. The size of the resonator gives the centre frequency and the space between the resonator and the line gives the loaded quality factor. The following drawing shows an example of external configuration. Dielectric resonator Alumina substrate : thickness=250µm

50 Ohm resistance

d 4 5 6 7 8 9 10 11 12 13 14 Additional information /G6e Resonator reference example = MURATA /DRD036EC016. As the exact frequency is given by the resonator size but also by the environment (cavity size, substrate characteristics, parasitic couplings …), the final dimensions of the resonator have to be defined according to the definitive module design. Other kind of resonators can be used (from TEKELEC or TRANS-TECH). The temperature coefficient has to be chosen according to the environment. /G6e Resonator coupling : d=0.2 to 0.3mm , l=1.5mm (quarter wave). These values have been used in the test fixture, of course they can be modified if the environment is different. The distance between the resonator and the edge of the substrate (close to MMIC) is proposed to be 3xl=4.5mm (3 quarter waves), theoretically only one is necessary but in this case the distance between resonator and MMIC is too low for automatic assembly. /G6e 50ΩΩΩΩ line width on alumina (heigth=0.25mm) = 0.238mm /G6e 50ΩΩΩΩ load on alumina : this load has to be as good as possible (low parasitic inductance). /G6e Cavity size (mm) : 18 x 17 x 7

CHV2240 K-band VCO / Q-band Multiplier Ref. :DSCHV22400096 -05-Apr-00 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Vt=0V External Resonator Coupling Port Information The external resonator has to be an equivalent series resonance. However, this impedance must also be compatible to the negative impedance of the oscillator ERC port in order to obtain the oscillation conditions and to avoid parasitic oscillations. Typical impedance of ERC port (Zerc) is given in the following tables. The diagrams show this impedance in a wider band. These values don’t include the wire bonding (self L_erc given in the section “Typical Assembly and Bias Configuration”). Vt=0V Vt=2V Vt=0V Vt=2V

K-band VCO / Q-band Multiplier CHV2240 Ref. :DSCHV22400096 -05-Apr-00 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

CHV2240 K-band VCO / Q-band Multiplier Ref. :DSCHV22400096 -05-Apr-00 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Ordering Information

Chip form : CHV2240-99F/00 Information furnished is believed to be accurate and reliable. However united monolithic semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors S.A.S.