CHV1206-98F

CHV1206-98F UMS | Alldatasheet

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Technical content

Ref. : DSCHV12066212 -July the 29th, 2016 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Low Phase Noise C band HBT VCO GaAs Monolithic Microwave IC

Description

The CHV1206-98F is a low phase noise C band HBT voltage controlled oscillator that integrates negative resistor, varactors and buffer amplifiers. It provides an excellent phase noise of 100dBc/Hz at 100kHz offset. It is designed for a wide range of applications, from space to commercial communication systems. The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. It is available in chip form. Main Features ■ C-band VCO + C buffers ■ Fully integrated VCO (no need for external resonator) ■ Low phase noise ■ High frequency stability ■ On chip self-biased devices ■ Available in bare die ■ Chip size: 2.77x2.77mm² Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit F_out Output frequency range on RF_out port 5.35 6.1 GHz P_out Output power on RF_out port 8.5 dBm PN_100 SSB Phase Noise @ F_out @ 100KHz offset 100 dBc/Hz Vc VT RF out 5.2 5.4 5.6 5.8 6.2 6.4 6.6 0 2 4 6 8 10 Frequency (GHz) Vtune (Volts)

CHV1206-98F Low Phase Noise C band HBT VCO Ref. : DSCHV12066212 -July the 29th, 2016 2/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com

Electrical Characteristics

Tamb.= +25°C, Vd = +3V Symbol Parameter Min Typ Max Unit F_out Output frequency range 5.35 6.1 GHz V_Tune Voltage Tuning range 0 10 V Tuning sensitivity 110 275 MHz/V Frequency drift rate 0.9 MHz/°C H1 Harmonics ½ F_out rejection 58 dBc H3 Harmonics 3/2 F_out rejection 56 dBc H4 Harmonics 2 F_out rejection 28 dBc PN_10 SSB Phase Noise given @ F_out @ 10 kHz -78 dBc/Hz PN_100 SSB Phase Noise given @ F_out @ 100 kHz -100 dBc/Hz Output (RF_Out) Return loss 12 dB Pulling into 2:1 VSWR for all phases 0.3 MHz Pushing vs Vc 13 MHz/V P_out Output Power on RF_out port 8.5 dBm Output power variation vs Tuning Voltage 1.2 dB Vc Positive supply voltage 3 3.5 V I_Vc Positive supply current 75 mA These values are representative of measurements on board that are made with bonding wires at the RF port. A bonding wire of typically 0.3nH will improve the matching at the accesses.

Low Phase Noise C band HBT VCO CHV1206-98F Ref. : DSCHV12066212 -July the 29th, 2016 3/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit VT Tuning voltage 15 V Vd Drain bias voltage 4 V Id Drain bias current 110 mA Tj Junction temperature 175 °C Ta Operating temperature range -55 to +125 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25°C Symbol Pad No Parameter Values Unit Vc VC Positive voltage supply 3 V VT VT Tuning Voltage 0 to 10 V

CHV1206-98F Low Phase Noise C band HBT VCO Ref. : DSCHV12066212 -July the 29th, 2016 4/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Typical Measurements on Boards Temperature = -20, +25, +85°C, Vd = +3.0V, Id = 75mA Output frequency versus Vtune Sensitivity versus Vtune 5.2 5.4 5.6 5.8 6.2 6.4 6.6 0 2 4 6 8 10 Frequency (GHz) Vtune (Volts) 100 150 200 250 300 350 400 0 2 4 6 8 10 Sensitivity (MHz/V) Vtune (Volts)

Low Phase Noise C band HBT VCO CHV1206-98F Ref. : DSCHV12066212 -July the 29th, 2016 5/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Typical Measurements on Boards Temperature = -20, +25, +85°C Vd = +3.0V, Id = 75mA Output power versus frequency Positive current versus frequency Pout (dBm) Frequency (GHz) 100 I_VC (mA) Frequency (GHz)

CHV1206-98F Low Phase Noise C band HBT VCO Ref. : DSCHV12066212 -July the 29th, 2016 6/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Typical Measurements on Boards Temperature = -20, +25, +85°C, Vd = +3.0V, Id = 75mA Phase Noise @ 10kHz versus frequency Phase Noise @ 100kHz versus frequency -100 -95 -90 -85 -80 -75 -70 -65 -60 Phase Noise @ 10kHz (dBc/Hz) Frequency (GHz) -120 -115 -110 -105 -100 -95 -90 -85 -80 Phase Noise @ 100kHz (dBc/Hz) Frequency (GHz)

Low Phase Noise C band HBT VCO CHV1206-98F Ref. : DSCHV12066212 -July the 29th, 2016 7/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Mechanical data All dimensions are in micrometers Chip size = 2770 x 2770 Chip thickness = 100µm ±10µm RF pad = 110 x 200µm² DC pads = 100 x 100µm² Chip width and length are given with a tolerance of ±35µm PAD Number Name Description

6 RF OUT Output RF port

1, 4, 5, 7 GND Ground (NC)

2 VT Varactor Tuning voltage

3 VC Positive supply voltage

CHV1206-98F Low Phase Noise C band HBT VCO Ref. : DSCHV12066212 -July the 29th, 2016 8/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Recommended assembly plan Note: 25µm diameter gold wire wedge bonding is to be preferred. Recommended circuit bonding table Label Type Decoupling Comment RF OUT RF Not required VCO output port VC Vc 120pF & 100nF & 2.2µF Collector Supply VT VT 100nF & 2.2µF Varactor Supply C2 C3 Vc VT C1=120pF C2=100nF C3=2.2µF

Low Phase Noise C band HBT VCO CHV1206-98F Ref. : DSCHV12066212 -July the 29th, 2016 9/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Evaluation mother board ■ Based on typically Ro4003 / 8mils or equivalent. ■ Decoupling capacitors of 120nF, 100nF ±10% and 2.2µF ±10% are recommended for all DC accesses. 2.2µF 2.2µF 100nF 100nF

CHV1206-98F Low Phase Noise C band HBT VCO Ref. : DSCHV12066212 -July the 29th, 2016 10/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com.

Ordering Information

Chip form: CHV1206-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.