CHU2277

CHU2277 UMS | Alldatasheet

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Technical content

Ref. DSCHU22771074 -15-Mar.-01 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC

Description

The CHU2277 is a W-band monolithic multifunction which integrates a frequency multiplier, a four-stage amplifier and a power divider. The frequency multiplier is based on an active transistor and allows to operate at low input level with a reduced power consumption. This chip provides two outputs at 77GHz, the main one is for the transmission path and the auxiliary one for the receiving mixer (s) LO signal. All the active devices are internally self biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured with the P-HEMT process : 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features /G6e Wide operating frequency range /G6e Low input power : 5dBm typical /G6e High output power (OUT1) /G6e Auxiliary output power (OUT2) /G6e Low AM noise /G6e High temperature range /G6e On-chip self biasing /G6e Automatic assembly oriented /G6e Low DC power consumption /G6e Chip size : 4.65 x 1.6 x 0.1mm OUT1 OUT2 IN +V -V W-band multifunction block-diagram 75 75,5 76 76,5 77 77,5 78 78,5 79 Output frequency (GHz) Output power (dBm) Typical output power characteristic Pin = 7dBm (on wafer measurement) Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit F_in Input frequency 38 38.5 GHz F_out Output frequency 76 77 GHz P_out1 Main output power 13 dBm P_out2 Auxiliary output power 10 dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! OUT2 OUT1

CHU2277 W-band Multiplier/MPA Ref. DSCHU22771074 -15-Mar.-01 2/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Full operating temperature range, used according to section “Typical assembly and bias configuration” Symbol Parameter Min Typ Max Unit F_in Input frequency 38 38.5 GHz F_out Output frequency 76 77 GHz P_in Input power 0 5 12 dBm P_out1 Output power (OUT1) (1) 11 13 16 dBm P_out2 Output power (OUT2) (1) 8 10 13 dBm Fin_rej fundamental rejection (dBc/Pout1(2Fin)) 45 55 dBc S_rej Spurious rejection (dBc/Pin)

12.75 GHz

25.5 GHz

38.25 GHz

51 GHz

63.75 GHz

76.5 GHz

89.25 GHz

102 GHz

An Amplitude noise @ 1kHz (SSB) Amplitude noise @ 10kHz (SSB) Amplitude noise @ 100kHz (SSB) Amplitude noise @ 200kHz (SSB) Amplitude noise @ 1MHz (SSB) -137 -145 -151 -153 -157 -132 -140 -146 -148 -152 dBc/Hz VSWR_in VSWR at input port (50Ω ) 2:1 2.5:1 +V Positive supply voltage (2) 4.4 4.5 4.6 V +I Positive supply current 180 240 mA -V Negative supply voltage (2) -4.6 -4.5 -4.4 V -I Negative supply current 14 20 mA Top Operating temperature range -40 100 °C (1) Defined on load VSWR ≤≤≤≤1.5:1. (2) Negative supply voltage must be applied at least 1us before positive supply voltage.

W-band Multiplier/MPA CHU2277 Ref. DSCHU22771074 -15-Mar.-01 3/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Absolute Maximum Ratings (1) Symbol Parameter Values Unit P_in Input power (2) 13 dBm +V Positive supply voltage 5 V -V Negative supply voltage -5 V +I Positive supply current 250 mA -I Negative supply current 20 mA Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s

CHU2277 W-band Multiplier/MPA Ref. DSCHU22771074 -15-Mar.-01 4/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Mechanical Data and Pin References 101112 Unit = µm External chip size (layout size + dicing streets) = 4650 x 1600 ± 35 Chip thickness = 100 +/- 10 HF Pads (2, 5,8) = 68 x 118 DC/IF Pads = 100 x 100 Pin number Pin name Description 1,3,4,6,7,9 Ground : should not be bonded. If required, please ask for more information.

11 Ground (optional)

10 +V Positive supply voltage 12 -V Negative supply voltage

W-band Multiplier/MPA CHU2277 Ref. DSCHU22771074 -15-Mar.-01 5/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Assembly and Bias Configuration L_in -V +V µ-strip line DC lines >= 120pF >= 120pF L_out1 101112 L_out2 µ-strip line µ-strip line This drawing shows an example of assembly and bias configuration. All the transistors are internally self biased. An external capacitor is recommended for the positive and negative supply voltages. For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to be according to the following recommendation. Port Equivalent inductance (nH) Wire length (mm) (1) OUT1 (5) L_out1 = 0.32 0.4 OUT2 (8) L_out2 = 0.32 0.4 (1) This value is the total length including the necessary loop from pad to pad. For a micro-strip configuration a hole in the substrate is necessary for chip assembly.

CHU2277 W-band Multiplier/MPA Ref. DSCHU22771074 -15-Mar.-01 6/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 As the connections at 77GHz (between MMIC and MMIC or between MMIC and external substrate) are critical, the transition matching network is split into two parts: one on MMIC and one on the external substrate. This choice allows to do, for OUT2 port, a direct connection between MMICs. For a connection to an external substrate a network is proposed on soft substrate for OUT1 and OUT2 ports. The following drawings gives the dimensions for a DUROID substrate (thickness=0.127mm, εr=2.2). Bonding area Proposed matching network for a 50Ω transition between OUT1 and a µ- strip line on DUROID substrate Bonding area Proposed matching network for a 50Ω transition between OUT2 and a µ- strip line on DUROID substrate.

W-band Multiplier/MPA CHU2277 Ref. DSCHU22771074 -15-Mar.-01 7/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Ordering Information

Chip form : CHU2277-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.