CHT4694-99F

CHT4694-99F_15 UMS | Alldatasheet

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Technical content

Ref. : DSCHT46942305 - 31 Oct 12 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 25-45 GHz Attenuator GaAs Monolithic Microwave IC

Description

The CHT4694 is a variable 25 -45GHz attenuator designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a MESFET process, 0.7µm gate length, via holes through the substrate and air bridges. It is supplied in chip form. Main Features Attenuation versus Frequency & V1, V2 ■ Broadband performance: 25-45GHz ■ 22dBm typical input 1dB compression point (any attenuation) ■ 25dB dynamic range ■ DC bias: -5V<V1<0V ; -5V<V2<0V ■ Chip size: 1.5x1.39x0.1mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fin Input frequency range 25 45 GHz Min Att. |S21| (V1=-5V;V2=-5V) (25 to 30GHz) |S21| (V1=-5V;V2=-5V) (30 to 40GHz) |S21| (V1=-5V;V2=-5V) (40 to 45GHz) 5.5 dB dB dB Max Att. |S21| (V1=0V;V2=0V) (25 to 30GHz) |S21| (V1=0V;V2=0V) (30 to 45GHz) dB dB Pin1dB Input 1dB compression point (any attenuation) (25-40 GHz) Input 1dB compression point (any attenuation) (40-45 GHz) dBm dBm ESC Protections: Electrostatic discharge sensitive device observe handling precautions! … … … … … … -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 S21 (dB) Freq (GHz)

CHT4694-99F 25-45 GHz Attenuator Ref. : DSCHT46942305 - 31 Oct 12 2/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Electrical Characteristics

Tamb.= +25°C Symbol Parameter Min Typ Max Unit Fin Input frequency range 25 45 GHz Min Att. |S21| (V1=-5V;V2=-5V) ( 25 to 30GHz) |S21| (V1=-5V;V2=-5V) ( 30 to 40GHz) |S21| (V1=-5V;V2=-5V) ( 40 to 45GHz) 5.5 dB dB dB Max Att. |S21| (V1=0V;V2=0V) (25 to 30GHz) |S21| (V1=0V;V2=0V) (30 to 45GHz) dB dB RLin Input Return loss (any attenuation) (25 to 30GHz) Input Return loss (any attenuation) (30 to 45GHz) -10 dB dB RLout Ouput Return loss (any attenuation) (25 to 30GHz) Ouput Return loss (any attenuation) (30 to 45GHz) dB dB Pin1dB Input 1dB compression point (any attenuation) (25 to 40 GHz) Input 1dB compression point (any attenuation) (40 to 45 GHz) dBm dBm I IP3 Input 3rd order Intercept Point (any attenuation)(25 to 40 GHz, Pin DCL > -4dBm) Input 3rd order Intercept Point (any attenuation)(25 to 40 GHz, Pin DCL > -4dBm) dBm dBm These values are representative of on -wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit V1 V1 control voltage -6V to +0.6V V V2 V2 control voltage -6V to +0.6V V Pin RF input power 30 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.

25-45 GHz Attenuator CHT4694-99F Ref. : DSCHT46942305 - 31 Oct 12 3/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Bias Conditions Tamb.= +25°C Symbol Parameter Values Unit V1 V1 control voltage -5 to 0 V V2 V2 control voltage -5 to 0 V Typical on-wafer Sij parameters Tamb = +25°C - V1 = -5V & V2= -5V – Minimum attenuation Freq (GHz) S11 (dB) PhS11 (°) S12 (dB) PhS12 (°) S21 (dB) PhS21 (°) S22 (dB) PhS22 (°)

CHT4694-99F 25-45 GHz Attenuator Ref. : DSCHT46942305 - 31 Oct 12 4/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on-wafer Sij parameters Tamb = +25°C - V1 = 0V & V2= 0V – Maximum attenuation Freq (GHz) S11 (dB) PhS11 (°) S12 (dB) PhS12 (°) S21 (dB) PhS21 (°) S22 (dB) PhS22 (°)

25-45 GHz Attenuator CHT4694-99F Ref. : DSCHT46942305 - 31 Oct 12 5/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on test fixture measurements Tamb.= +25°C Attenuation versus frequency V1 = -5V to 0V & V2= -5V and after V1= 0V & V2 = -5V to 0V Attenuation versus voltage @ 44GHz -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 S21 (dB) Freq (GHz) -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 dBS21 (dB) Vi (V) freq=44 GHz, V1 5 to 0V , V2= -5V freq=44 GHz, V1= 0V , V2 -5 to 0V A B A : V1 = -5V to 0V & V2= -5V B : V1= 0V & V2 = -5V to 0V

CHT4694-99F 25-45 GHz Attenuator Ref. : DSCHT46942305 - 31 Oct 12 6/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on test fixture measurements Tamb.= +25°C Input return loss versus frequency V1 = -5V to 0V & V2= -5V and after V1= 0V & V2 = -5V to 0V Output return loss versus frequency V1 = -5V to 0V & V2= -5V and after V1= 0V & V2 = -5V to 0V -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 S11 (dB) Freq (GHz) -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 S22 (dB) Freq (GHz)

25-45 GHz Attenuator CHT4694-99F Ref. : DSCHT46942305 - 31 Oct 12 7/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on test fixture measurements Tamb.= +25°C Attenuation versus input power @ 26GHz V1 = -5V to 0V & V2= -5V and after V1= 0V & V2 = -5V to 0V Attenuation versus input power @ 40GHz V1 = -5V to 0V & V2= -5V and after V1= 0V & V2 = -5V to 0V

CHT4694-99F 25-45 GHz Attenuator Ref. : DSCHT46942305 - 31 Oct 12 8/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on test fixture measurements Attenuation versus temperature Attenuation versus input power @ 34 GHz -40°C +25°C +85°C V1=V2=-5V V1=V2=0V V1=0V / V2=-5V +85°C +25°C -40°C +85°C +25°C -40°C -40°C +25°C +85°C -40°C +25°C +85°C V1=V2=-5V V1=V2=0V V1=0V / V2=-5V +85°C +25°C -40°C +85°C +25°C -40°C V1=V2=-5V V1=V2=0V V1=0V / V2=-5V -40°C +25°C +85°C +85°C +25°C -40°C V1=V2=-5V V1=V2=0V V1=0V / V2=-5V -40°C +25°C +85°C -40°C +25°C +85°C +85°C +25°C -40°C

25-45 GHz Attenuator CHT4694-99F Ref. : DSCHT46942305 - 31 Oct 12 9/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on test fixture measurements Attenuation versus input power @ 40 GHz Input IP3 versus temperature @ 34GHz V1=-3.5V / V2=-5V (worst case in terms of linearity) V1=V2=-5V V1=V2=0V V1=0V / V2=-5V -40°C +25°C +85°C +85°C +25°C -40°C V1=V2=-5V V1=V2=0V V1=0V / V2=-5V -40°C +25°C +85°C -40°C +25°C +85°C +85°C +25°C -40°C +85°C +25°C -40°C +85°C +25°C -40°C

CHT4694-99F 25-45 GHz Attenuator Ref. : DSCHT46942305 - 31 Oct 12 10/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on test fixture measurements Input IP3 versus temperature @ 39GHz V1=-3.5V / V2=-5V (worst case in terms of linearity) Input IP3 versus input power @ 42GHz +85°C +25°C -40°C +85°C +25°C -40°C 3 4 5 6 Input IP3 (dBm) Pin DCL (dBm)

42 GHz

25-45 GHz Attenuator CHT4694-99F Ref. : DSCHT46942305 - 31 Oct 12 11/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Biasing sequence To obtain good performances in linearity, biasing voltage should be applied as following: - Control of 1st stage attenuation with V1 from –5V to 0V, with V2 fixed at -5V - Control of 2nd stage with V2 from -5V to 0V, with V1 fixed at 0V This part could be also driven in Single Voltage Control, applying the same voltage from -5V to 0V on V1 and V2, leading to lower linearity performances … … V1 V2 … … V1 V2 -5V AttenuationMin. Max. Voltage -5V AttenuationMin. Max. Voltage RF OUT RF IN

CHT4694-99F 25-45 GHz Attenuator Ref. : DSCHT46942305 - 31 Oct 12 12/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Chip Assembly and Mechanical Data Note: Supply feed might be bypassed. 25m diameter gold wire is to be preferred. to V1 DC gate supply feed to V2 DC gate supply feed 120 pF120 pF .. .. .. .. to V1 DC gate supply feed to V2 DC gate supply feed 120 pF120 pF .. .. .. .. .. .. .. .. .. .. .. ..

25-45 GHz Attenuator CHT4694-99F Ref. : DSCHT46942305 - 31 Oct 12 13/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Bonding pad positions UNITS µm Tol ± 35µm (Chip thickness: 100µm. All dimensions are in micrometers)

CHT4694-99F 25-45 GHz Attenuator Ref. : DSCHT46942305 - 31 Oct 12 14/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data a re available in the application note AN0019 also available at http://www.ums-gaas.com.

Ordering Information

Chip form: CHT4694-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in thi s publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.