CHT3091A_06 UMS | Alldatasheet

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Ref. : DSCHT3091a6354 - 20 Dec 06 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France DC-40GHz ATTENUATOR GaAs Monolithic Microwave IC

Description

The CHT3091a is a variable DC-40GHz attenuator designed for a wide range of applications, from military to commercial communication sy stems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a MESFET process, 0.7µm gate length, via holes through the substrate and air bridges. It is supplied in chip form. Main Features ■ Broadband performances: DC-40GHz ■ 15dBm minimum input 1dB compression point (any attenuation) ■ DC bias : -5V<VS<0V ; -5V<VP<0V ■ Chip size: 0.91 x 0.86 x 0.10 mm -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 0 5 10 15 20 25 30 35 40 Frequency ( GHz ) Insertion Loss ( dB ) CHT3091 Gain control Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fin Input frequency range DC 40 GHz Min Att. Minimum attenuation |S21| (VS=0V;VP=-5V) 3 dB Max Att. Maximum attenuation |S21| (VS=-5V;VP=0V) 20 dB VSWRin Input VSWR (any attenuation) 2.:1 VSWRout Output VSWR (any attenuation) 2.:1 Pin1dB Input 1dB compression point.(any attenuation) 15 dBm ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Ref. : DSCHT3091a6354 - 20 Dec 06 2/8 Specifications subject to change without notice Electrical Characteristics (1) Tamb = +25°C Symbol Parameter Min Typ Max Unit Fin Input frequency range DC 40 GHz Min Att. Minimum attenuation |S21| (VS=0V;VP=-5V) DC-10GHz DC-20GHz DC-40GHz 2.2 3.5 dB dB dB Max Att. Maximum attenuation |S21| (VS=-5V;VP=0V) DC-10GHz DC-20GHz DC-40GHz dB dB dB VSWRin Input VSWR (any attenuation) 2:1 VSWRout Output VSWR (any attenuation) 2:1 Pin1dB Input 1dB compression point.(any attenuation) 15 dBm (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit VP VP control voltage -6V V VS VS control voltage -6V V Pin RF input power 20 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Ref. DSCHT3091a6354 - 20 Dec 06 3/8 Specifications subject to change without notice Typical Result Chip Typical Response (On wafer Sij): Tamb = +25°C Vp=0V Vs=-5V Frequency MS11 PS11 MS12 PS12 MS21 PS21 MS22 PS22 mod pha mod pha mod pha mod pha GHz dB deg dB deg dB deg dB deg Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Ref. : DSCHT3091a6354 - 20 Dec 06 4/8 Specifications subject to change without notice Tamb = +25°C Vp=-5V Vs=0V Frequency MS11 PS11 MS12 PS12 MS21 PS21 MS22 PS22 mod pha mod pha mod pha mod pha GHz dB deg dB deg dB deg dB deg Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Ref. DSCHT3091a6354 - 20 Dec 06 5/8 Specifications subject to change without notice Typical Results Chip Typical Response (On wafer Sij): Tamb = +25°C Vp = 0V to -5V & Vs = -5V to 0V -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -5 -4 -3 -2 -1 0 Vp Control Voltage ( Volt ) with Vs = -5 - Vp Insertion Loss ( dB ) CHT3091 Insertion Loss vs Control Voltages as Function of FREQUENCY ( GHz ) Frequency ( GHz ) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 0 5 10 15 20 25 30 35 40 45 50 55 60 Frequency ( GHz ) Insertion Loss ( dB ) CHT3091 Gain control Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Ref. : DSCHT3091a6354 - 20 Dec 06 6/8 Specifications subject to change without notice -3 0 -2 8 -2 6 -2 4 -2 2 -2 0 -1 8 -1 6 -1 4 -1 2 -1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 Fr eque nc y ( G H z ) Input Return Loss ( dB ) C H T 309 1 In pu t R etu rn L oss -3 0 -2 8 -2 6 -2 4 -2 2 -2 0 -1 8 -1 6 -1 4 -1 2 -1 0 0 5 10 1 5 20 2 5 30 35 4 0 45 50 55 60 Fr e que nc y ( G H z ) Output Return Loss ( dB ) C H T 30 91 O u tp u t R e tu r n L o s s Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Ref. DSCHT3091a6354 - 20 Dec 06 7/8 Specifications subject to change without notice Chip Assembly and Mechanical Data Note : Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. (Chip thickness: 100µm. All dimensions are in micrometers) Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Ref. : DSCHT3091a6354 - 20 Dec 06 8/8 Specifications subject to change without notice

Ordering Information

Chip form: CHT3091a99F/00 Information furnished is believed to be accurate and reliable. How ever United Monolithic Se miconductors S.A.S. assumes no responsibility for the c onsequences of use of such informa tion nor for any infringement of patents or other rights of thir d parties w hich may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Se miconductors S.A .S.. Specifications mentioned in this publication are subj ect to change w ithout notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09