CHT3029-99F

CHT3029-99F UMS | Alldatasheet

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Technical content

Ref. : DSCHT30294330 - 26 Nov 14 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 DC-35GHz 4 Bit Digital Attenuator GaAs Monolithic Microwave IC

Description

The CHT3029-99F is a very wide band digital attenuator, which integrates 4 bits with a LSB of 1 dB and provides a dynamic range of 15dB from DC to 35GHz. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufac tured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performances: DC-35GHz ■ Insertion Loss (state 0): 4.5dB ■ RMS attenuation error: 0.2dB ■ Return Losses: 12dB ■ DC bias: V+=5V and V-=-5V ■ No internal DC Block at Input and Output RF accesses ■ Chip size 2.61 x 1.56mm² Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range DC 35 GHz IL Insertion Loss 4.5 dB Rms_att_er RMS of attenuation error 0.2 dB Dyn Dynamic 15 dB

CHT3029-99F DC-35GHz 4 Bit Digital Attenuator Ref. : DSCHT30294330 - 26 Nov 14 2/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Electrical Characteristics

Tamb.= +25°C, V+ = +5V V- = -5V Symbol Parameter Min Typ Max Unit Freq Frequency range DC 35 GHz IL Insertion Loss 4.5 dB S11 Input Return Loss 12 dB S22 Output Return Loss 14 dB IP1dB Input power at 1dB gain compression 20 dBm Dyn Dynamic 15 dB LSB Attenuator elementary step 1 dB Att_err Attenuation error ±0.5 dB Rms_att_ err RMS attenuation error 0.2 dB Phivar Phase variation -5/+20 ° Rms_phi var RMS phase variation 12 ° Sw_t Switching time 15 ns V+ Positive supply voltage 5 V V- Negative supply voltage -5 V Vctrl_L Control voltage low level 0 0.4 V Vctrl_H Control voltage high level 2.4 7 V I_V+ Positive supply DC current 5 mA I_V- Negative supply DC current 5 mA These values are representative measurements in test fixture with bonding wires of typically 0.2nH at RF accesses. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit V+ Maximum positive voltage 8 V V- Minimum negative voltage -8 mA Ai CTRL voltage (Vctrl _low, Vctrl _high) -2 to 8 V Pin Maximum Input power 27 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage.

DC-35GHz 4 Bit Digital Attenuator CHT3029-99F Ref. : DSCHT30294330 - 26 Nov 14 3/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Definitions n: Attenuator state index with 0  n  15 Phase_S21(n) : Measured phase of S21 in degree at attenuation state n dB_S21(n) : Measured magnitude of S21 in dB at attenuation state n Attenuation Error (Att_err) Att_err(n)= dB_S21 (n) - dB_S21(0) –1xn (dB) The translation of Att_err(n) from dB to linear is given by: Att_err_lin(n) = )(_ nerrAtt Phase variation (Phivar) Phivar(n) = Phase_S21(n) - Phase_S21(0) (°) RMS Attenuation Error (Rms_att_err) Rms_att_err =   2))(__1(.16 11log20 n nlinerrAtt (dB) RMS Phase variation (Rms_Phivar) Rms_Phivar = ))var(( nPhi (°)

CHT3029-99F DC-35GHz 4 Bit Digital Attenuator Ref. : DSCHT30294330 - 26 Nov 14 4/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Bias Conditions Tamb.= +25°C Symbol Pad No Parameter Values Unit A1 2 Control voltage of attenuator bit 1 0 / +3.3 or +5 V A2 3 Control voltage of attenuator bit 2 0 / +3.3 or +5 V A3 4 Control voltage of attenuator bit 3 0 / +3.3 or +5 V A4 5 Control voltage of attenuator bit 4 0 / +3.3 or +5 V V+ 8 Positive biasing voltage +5 V V- 7 Negative biasing voltage –5 V Attenuator control table Voltage to apply on pads A1 to A4 State Att (dB) (V) (V) (V) (V) 0 0 0 0 0 0 1 1 0 0 0 3.3 2 2 0 0 3.3 0 3 3 0 0 3.3 3.3 4 4 0 3.3 0 0 5 5 0 3.3 0 3.3 6 6 0 3.3 3.3 0 7 7 0 3.3 3.3 3.3 8 8 3.3 0 0 0 9 9 3.3 0 0 3.3 10 10 3.3 0 3.3 0 11 11 3.3 0 3.3 3.3 12 12 3.3 3.3 0 0 13 13 3.3 3.3 0 3.3 14 14 3.3 3.3 3.3 0 15 15 3.3 3.3 3.3 3.3

DC-35GHz 4 Bit Digital Attenuator CHT3029-99F Ref. : DSCHT30294330 - 26 Nov 14 5/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on-wafer Sij parameters Tamb.= +25°C, V+ =5V / V-=-5V / State=0 Freq (GHz) S11 (dB) PhS11 (°) S12 (dB) PhS12 (°) S21 (dB) PhS21 (°) S22 (dB) PhS22 (°)

CHT3029-99F DC-35GHz 4 Bit Digital Attenuator Ref. : DSCHT30294330 - 26 Nov 14 6/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Board Measurements Tamb.= +25°C, V+ = +5V, V- = -5V Insertion Loss (Attenuator state 0) Input Return Loss All States Output Return Loss All States

DC-35GHz 4 Bit Digital Attenuator CHT3029-99F Ref. : DSCHT30294330 - 26 Nov 14 7/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Board Measurements Tamb.= +25°C, V+ = +5V, V- = -5V Attenuation Error versus Frequency All states Attenuation Error versus States 2GHz < Frequency < 35GHz RMS Attenuation Error versus Frequency Attenuation versus States 2GHz < Frequency < 35GHz

CHT3029-99F DC-35GHz 4 Bit Digital Attenuator Ref. : DSCHT30294330 - 26 Nov 14 8/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Board Measurements Tamb.= +25°C, V+ = +5V, V- = -5V Phase Variation versus Frequency All states Phase Variation versus States 2GHz < Frequency < 35GHz RMS of Phase Variation versus Frequency

DC-35GHz 4 Bit Digital Attenuator CHT3029-99F Ref. : DSCHT30294330 - 26 Nov 14 9/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Mechanical dimensions and pad allocation All dimensions are in micrometers Chip size = 2610 x 1560 ±35µm Chip thickness = 100µm +/- 10µm. RF pads (1, 9) = 200 x 100µm² DC and control pads (2, 3, 4, 5, 6, 7, 8,) = 100 x 100µm² Pin number Pad name Description

1 IN Input RF

2 A1 Attenuator bit 1

3 A2 Attenuator bit 2

4 A3 Attenuator bit 3

5 A4 Attenuator bit 4

7 VSS -5V supply voltage: interface

8 VCC +5V supply voltage: interface

9 OUT Output RF

6 GND NC

CHT3029-99F DC-35GHz 4 Bit Digital Attenuator Ref. : DSCHT30294330 - 26 Nov 14 10/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended assembly diagram Recommended circuit bonding table Label Type Decoupling Comment 1, 9 RF External DC block must be used to ensure DC decoupling Input and Output accesses 2, 3, 4, 5 Vctrl Not required Bit control pads

7 V- 10nF Negative Supply

8 V+ 10nF Positive Supply

1, 9 Inductance (Lbonding) < 0.2nH two wires: diameter 25µm, length < 300µm 2, 3, 4, 5, 7, 8 Inductance (Lbonding) = 0.8nH one wire: diameter 25µm, length 1mm C=10 nF 2 3 4 5 6 7 8

DC-35GHz 4 Bit Digital Attenuator CHT3029-99F Ref. : DSCHT30294330 - 26 Nov 14 11/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Notes

CHT3029-99F DC-35GHz 4 Bit Digital Attenuator Ref. : DSCHT30294330 - 26 Nov 14 12/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com.

Ordering Information

Chip form: CHT3029-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in thi s publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.