CHR2391

CHR2391_11 UMS | Alldatasheet

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Technical content

Ref. : DSCHR23911192 - 11 Jul 11 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12-16GHz Integrated Down Converter GaAs Monolithic Microwave IC

Description

The CHR2391 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, v ia holes through the substrate and air bridges. It is available in chip form. Main Features  Broadband performances: 12.0-16.0GHz  15 dB conversion gain  2dB noise figure, for IF>0.1GHz  10dBm LO input power  -10dBm RF input power (1dB gain comp.)  Low DC power consumption, 100mA@3.5V  Chip size: 2.49 X 2.13 X 0.10mm Typical on wafer measurement: Conversion Gain & Image suppression @ IF=0.9 & 1.5GHz Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 16 GHz FLO LO frequency range 5.25 7.25 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain 13 +15 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! -16 -14 -12 -10 dB RF Frequency GHz

2 LO frequency

CHR2391 12 -16GHz Integrated Down Converter Ref. : : DSCHR23911192 - 11 Jul 11 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 16 GHz FLO LO frequency range 5.25 7.25 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain (1) +13 +15 dB NF Noise Figure, for IF>0.1GHz (1) 2 2.5 dB PLO LO Input power +10 +13 dBm Img Sup Image Suppression 15 dBc P1dB Input power at 1dB gain compression -10 dBm IP3 Input IP3 2.5 dBm LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 2.0:1 Id Bias current (2) 100 130 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances are obtained for Idm=50mA (Id consumption of the X2+buffer; vgb -0.4V) and Idl=50mA(Id consumption for the lna; Vga-0.4V) Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage 4.0 V Id Maximum drain bias current 180 mA Vg Gate bias voltage -2.0 to +0.4 V Vdg Maximum drain to gate voltage ( Vd – Vg) +5 V Pin Maximum RF peak input power overdrive (2) -5 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.

12 -16GHz Integrated Down Converter CHR2391 Ref. : : DSCHR23911192 - 11 Jul 11 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical On-wafer Measurements Bias Conditions: Vdm= Vdl= 3.5 V, Idl= Idm= 50mA( Vga=vgb-0.4V), Vgm= -0.7V, Vgx= -0.6V Conversion gain & Image suppression with a 90° IQ combiner -16 -14 -12 -10 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 RF Frequency GHz dB Infradyne Gain I Image Rejection I Image Rejection Q Infradyne Gain Q IF= 0,9GHz -16 -14 -12 -10 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 RF Frequency GHz dB Infradyne Gain I Image Rejection I Image Rejection Q Infradyne Gain Q IF= 1,5GHz

CHR2391 12 -16GHz Integrated Down Converter Ref. : : DSCHR23911192 - 11 Jul 11 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Gain compression versus RF input power RF Input power dBm Conversion Gain dB IF Output power dBm RF Input power dBm Conversion Gain dB IF Output power dBm IF=0.9GHz IF=1.5GHz

12 -16GHz Integrated Down Converter CHR2391 Ref. : : DSCHR23911192 - 11 Jul 11 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Assembly and Mechanical Data Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions Chip thickness: 100µm To Vg (multiplier) DC Gate supply To Vg (Buffer) DC Gate supply To VdL (lna) +VdM (x +buffer) DC Gate supply To Vg (mixer) DC Gate supply To Vg (lna) DC Gate supply Unit: µm Tol : + / - 35µm

CHR2391 12 -16GHz Integrated Down Converter Ref. : DSCHR23911192 - 11 Jul 11 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Ordering Information

Chip form : CHR2391-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subj ect to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without expres s written approval from United Monolithic Semiconductors S.A.S.