CHR2299-99F_15 UMS | Alldatasheet

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Technical content

Ref. : DSCHR22992012 - 19 Jan 12 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 40-44GHz Down converter GaAs Monolithic Microwave IC

Description

IF_Q IF_I LO_IN GM GX DX DA RF_IN 4LO_OUT IF_Q IF_I LO_IN GM GX DX DA RF_IN 4LO_OUT The CHR2299-99F is a down converter multifunction chip, which integrates LO X4 multiplier, a balanced cold FET mixer and a RF LNA. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufa ctured with a power pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features 39 40 41 42 43 44 45 RF_frequency (GHz) Conversion Gain (dB)supradyne infradyne ■ 40-44GHz RF bandwidth ■ 21dB conversion gain ■ x4 LO frequency multiplier ■ x4 LO output port ■ > 12dB image rejection ■ DC bias: Vd = 4V @ Id = 240mA ■ Chip size 3.97x2.25x0.1mm Main Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit F_RF RF frequency range 40 44 GHz F_LO LO frequency range 9.5 11.5 GHz F_IF IF frequency range DC 2.0 GHz Gc Conversion gain 21 dB

CHR2299-99F 40-44GHz Down converter Ref. : DSCHR22992012 - 19 Jan 12 2/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Electrical Characteristics

Tamb. = +25°C Symbol Parameter Min Typ Max Unit F_RF RF frequency range 40 44 GHz F_LO LO frequency range 9.5 11.5 GHz F_IF IF frequency range DC 2.0 GHz Gc Conversion gain 21 dB Im rej Image rejection 12 dB P_LO LO Input power 0 dBm NF Noise figure for IF>0.1GHz 4.5 dB IMD3 Intermodulation level at Pin2tones = -30dBm 45 dBc RL_RF RF Return Loss 6 dB RL_LO LO Return Loss 12 dB P_4FLO Output power at 4LO_OUT port -1 dBm 4xFLO_Lk 4xFLO leakage on RF port -38 dBm DX, DA LO multiplier, buffer and LNA biasing 4 V GM Mixer gate biasing -0.6 V G3 LO buffer gate biasing -0.3 V GX Multiplier gate biasing -1.2 V IdT Total biasing current 240 mA Electrostatic discharge sensitive device observe handling precautions! These values are representative of chip on board measurements with a 90° hybrid coupler. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit DX, DA LO multiplier, buffer and LNA biasing 4.5 V IdT Total biasing current 300 mA GM, G3, GX Gate bias voltage -2; +0.6 V P_LO Maximum peak input LO power overdrive (2) 10 dBm Pin_RF Maximum peak input RF power overdrive (2) -5 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C RTh Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W 80 °C/W (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s

40-44GHz Down converter CHR2299-99F Ref. : DSCHR22992012 - 19 Jan 12 3/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical chip on board Measurements in Temperature DX= DA = 4V, GM = -0.6V, G3 = -0.3V, GX = -1.2V, P_LO = 0dBm These values are representative of onboard measurements as defined on the section ”Evaluation mother board”. The losses are de-embedded. Conversion Gain versus RF frequency & temperature RF = 4LO-IF; IF = 1GHz 39 40 41 42 43 44 45 RF_frequency (GHz) Conversion Gain (dB) Conversion Gain versus RF frequency & temperature RF = 4LO+IF; IF = 1GHz 39 40 41 42 43 44 45 RF_frequency (GHz) Conversion Gain (dB)

CHR2299-99F 40-44GHz Down converter Ref. : DSCHR22992012 - 19 Jan 12 4/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical chip on board Measurements in Temperature Conversion Gain versus RF frequency & temperature RF = 4LO+/-IF; IF = 3.5GHz Conversion Gain versus RF frequency & temperature RF = 4LO+IF; IF = 6GHz 39 40 41 42 43 44 45 RF_frequency (GHz) Conversion Gain (dB)

40-44GHz Down converter CHR2299-99F Ref. : DSCHR22992012 - 19 Jan 12 5/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical chip on board Measurements in Temperature Image rejection versus RF frequency & temperature RF = 4LO+/-IF; IF = 2GHz 39 40 41 42 43 44 45 RF_frequency (GHz) Image Rejection (dB) -40 °C; sup +25 °C; sup +85 °C; sup inf inf inf Image rejection versus RF frequency & temperature RF = 4LO+IF; IF = 6GHz 39 40 41 42 43 44 45 RF_frequency (GHz) Image Rejection (dB) -40 °C +25 °C +85 °C

CHR2299-99F 40-44GHz Down converter Ref. : DSCHR22992012 - 19 Jan 12 6/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical chip on board Measurements IMD3 versus RF frequency & Input power Infradyne: IF = 2GHz Supradyne: IF = 2GHz 100 Input power 2tones (dBm) IMD3 (dB) 38.5 GHz 40.5 GHz 42.5 GHz 44.5 GHz 100 Input power 2tones (dBm) IMD3 (dB) 40.5 GHz 42.5 GHz 44.5 GHz Input IP3 versus Temperature & Input power Supradyne: RF = 40.5GHz; IF = 2GHz Supradyne: RF = 40.5GHz; IF = 3.5GHz -10 Input power 2tones (dBm) Input IP3 (dBm) -10 Input power 2tones (dBm) Input IP3 (dBm)

40-44GHz Down converter CHR2299-99F Ref. : DSCHR22992012 - 19 Jan 12 7/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical chip on board Measurements LO harmonics Power level on RF port -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 8 9 10 11 12 13 14 LO Frequency (GHz) n*LO power (dBm) P_LO P_2LO P_4LO RF & LO return loss (in the connectors plan) -30 -25 -20 -15 -10 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) Return loss (dB) LO return loss RF return loss

CHR2299-99F 40-44GHz Down converter Ref. : DSCHR22992012 - 19 Jan 12 8/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Mechanical data Chip thickness: 100 µm, units: µm, tol:+/- 35 µm DC pads = 92x92 µm, RF pads = 178x114 µm Pin number Pin name Description

1 RF_IN RF input

2 DA LNA drain voltage

3 DX Multiplier & Buffer drain voltage

4 GX Multiplier gate voltage

5 G3 LO buffer gate voltage

6 GM Mixer gate voltage

7, 8 IF_I & IF_Q IF outputs 9 4LO_OUT Output 4xLO frequency

10 LO_IN LO input

Pin Name Pin Number Parameter Nominal value GM 6 Mixer gate voltage -0.6 V G3 5 LO buffer gate voltage -0.3 V GX 4 X4 gate voltage -1.2 V DX 3 X4 and buffer drain voltage 4 V DA 2 LNA Drain voltage 4 V

40-44GHz Down converter CHR2299-99F Ref. : DSCHR22992012 - 19 Jan 12 9/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Chip assembly Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended IF_I & IF_Q to 90° hybrid coupler Optionnal 4LO output LO input RF input Capacitors 120pF DC Suply

CHR2299-99F 40-44GHz Down converter Ref. : DSCHR22992012 - 19 Jan 12 10/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Evaluation mother board Based on typically Ro4003 / 8 mils or equivalent. Decoupling capacitors of 10nF 10% and chip 120pF 10% 90° hybrid coupler: 1-2GHz or 2-4GHz

40-44GHz Down converter CHR2299-99F Ref. : DSCHR22992012 - 19 Jan 12 11/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 DC Schematic LO multiplier and buffers: 4V, 105mA DX 150  LO 20  GX 2 k X2 multiplierLO amplifier 30 mA 20  200  50  200  70  X2 multiplier 200  40  4LO amplifier LO out 50  15 mA 30 mA 30 mA 11.3  112  11.3  GM 500  500  IF I IF Q Mixer 500  GM 500  500  IF I IF Q Mixer 500  LNA: 4V, 140mA 17 mA DA 160  3.7 k 50  RF 6  16  34 mA 450  3.44 k 25  3  100  34 mA 450  3.44 k 25  3  23  54 mA 450  3.42 k 16  2  100 

CHR2299-99F 40-44GHz Down converter Ref. : DSCHR22992012 - 19 Jan 12 12/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and RE ACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com.

Ordering Information

Chip form: CHR2299-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this pu blication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or syst ems without express written approval from United Monolithic Semiconductors S.A.S.