CHR2295_11 UMS | Alldatasheet
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Technical content
Ref.: DSCHR22951192 - 11 Jul 11 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0)1 69 33 03 08 - Fax: +33 (0)1 69 33 03 09 24-30GHz Integrated Down Converter GaAs Monolithic Microwave IC
Description
The CHR2295 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performances: 24-30GHz ■ 11dB conversion gain ■ 3.5dB noise figure, for IF>0.1GHz ■ 10dBm LO input power ■ -10dBm RF IP@1dB gain comp. ■ Low DC power: 120mA@3.5V ■ Chip size: 2.49x1.97x0.10mm Conversion Gain & Image suppression @IF=1.5GHz (test board losses included) Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit FRF RF frequency range 24 30 GHz FLO LO frequency range 12 15 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain 8.5 11 dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! -24.00 -20.00 -16.00 -12.00 -8.00 -4.00 0.00 4.00 8.00 12.00 2XLO Frequency (GHz) (dB) Gc_channel_sup_rf+ Gc_channel_inf_rf+ Gc_channel inf_rf- Gc_channel_sup_rf- LO Q I GM GB VDM VDL GX VGA RF
CHR2295 24-30GHz MFC Down Converter Ref.: DSCHR22951192 - 11 Jul 11 2/6 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit FRF RF frequency range 24 30 GHz FLO LO frequency range 12 15 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain (1) 8.5 11 dB NF Noise Figure, for IF>0.1GHz 3.5 dB PLO LO Input power 10 dBm Img Sup Image Suppression 15 17 dBc P1dB Input power at 1dB gain compression -10 dBm LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 3.0:1 Id Bias current (2) 120 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances will be achieved for Idm=50mA and Idl=70mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 200 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
24-30GHz MFC Down Converter CHR2295 Ref.: DSCHR22951192 - 11 Jul 11 3/6 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical On-wafer Measurements Input RF compression by channel -14 -12 -10 Input RF power (dBm) IF power_I (dBm) Conv_gain I (dB) IF power_Q (dBm) Conv_gain Q (dB) Freq_RF= 24.6GHz Freq_LO= 12.05GHz -14 -12 -10 Input RF power (dBm) IF power_I (dBm) Conv_gain I (dB) IF power_Q (dBm) Conv_gain Q (dB) Freq_RF= 28GHz Freq_LO= 13.75GHz
CHR2295 24-30GHz MFC Down Converter Ref.: DSCHR22951192 - 11 Jul 11 4/6 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical On-board Measurements Bias Conditions : Vdm= Vdl= 3.5V, Vgm= Vgx= -0.9V, Vgb= Vga= -0.3V All these measurements include the losses from the test board (typically 1dB for the conversion gain and 0.5dB for the Noise Figure). Conversion gain & Image suppression versus IF frequency Noise figure supradyne & infradyne versus IF frequency -24.00 -20.00 -16.00 -12.00 -8.00 -4.00 0.00 4.00 8.00 12.00 2XLO Frequency (GHz) Conversion Gain & Image suppression (dB) IF=1GHz IF=1.5GHz IF=2GHz IF=1GHz IF=1.5GHz IF=2GHz RF Frequency (GHz) Noise factor (dB) Channel_sup_IF_1GHz Channel_inf_IF_1GHz Channel_sup_IF_1.5GHz Channel_inf_IF_1.5GHz Channel_sup_IF_2GHz Channel_inf_IF_2GHz
24-30GHz MFC Down Converter CHR2295 Ref.: DSCHR22951192 - 11 Jul 11 5/6 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Assembly and Mechanical Data LO IN RF IN Q OUT I OUT To Vgm DC Gate Supply To Vgb DC Gate Supply To Vgx DC Gate Supply To Vga DC Gate Supply To Vdm,Vdl DC Drain Supply Note: Supply feed should be bypassed. 25µm diameter gold wire is recommended Bonding pad positions (Chip thickness: 100µm. All dimensions are in micrometers)
CHR2295 24-30GHz MFC Down Converter Ref.: DSCHR22951192 - 11 Jul 11 6/6 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products.
Ordering Information
Chip form: CHR2295-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties wh ich may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.