CHR2292 UMS | Alldatasheet

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Technical content

Ref. : DSCHR22921201 -20-July-01 1/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-20GHz Integrated Down Converter GaAs Monolithic Microwave IC

Description

The CHR2292 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features

  • Broadband performances : 17-20GHz
  • 13dB conversion gain
  • 4.0dB noise figure
  • 10dBm LO input power
  • -10dBm RF input power (1dB gain comp.)
  • Low DC power consumption, 110mA@3.5V
  • Chip size : 2.49 X 2.13 X 0.10 mm -20 -16 -12 12 14 16 18 20 22 24 2*LO Frequency (GHz) Conversion Gain & Image suppression (dB) Gc_channel_inf_rf- Gc_channel_sup_rf- Gc_channel_inf_rf+ Gc_channel_sup_rf+ Conversion Gain for F_IF=1GHz (on wafer meas.) P_LO=+10dBm / P_RF= -20dBm Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF RF frequency range 17 20 GHz FLO LO frequency range 7.5 10 GHz FIF IF frequency range 0.25 1.5 GHz Gc Conversion gain 13 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! LO Q I GM GB VDM VDL GX VGA RF

17-20GHz Mfc Down Converter CHR2292 Ref. : DSCHR22921201 -20-July-01 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit FRF RF frequency range 17 20 GHz FLO LO frequency range 7.5 10 GHz FIF IF frequency range 0.25 1.5 GHz PLO LO Input power +10 dBm Gc Conversion gain (1) 13 dB NF Noise Figure (1) 4.0 dB Img Sup Image Suppression (1) 15 dBc P1dB RF Input power at 1dB gain compression (1) -10 dBm LO VSWR Input LO VSWR (1) 1.5:1 RF VSWR Input RF VSWR (1) 2.5:1 Id Bias current (2) 110 mA (1) On Wafer measurements without bonding wires at the RF ports. (2) Current source biasing network is recommended. Optimum performances for Idm=50mA and Idl=60mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 200 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.

17-20GHz Mfc Down Converter CHR2292 Ref. : DSCHR22921201 -20-July-01 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical On-wafer Measurements -20 -16 -12 12 14 16 18 20 22 24 2*LO Frequency (GHz) Conversion Gain & Image suppression (dB) Gc_channel_inf_rf- Gc_channel_sup_rf- Gc_channel_inf_rf+ Gc_channel_sup_rf+ Conversion Gain & Image Suppresion @ IF=1GHz 0.5 1.5 2.5 3.5 4.5 5.5 17 17.5 18 18.5 19 19.5 20 RF Frequency (GHz) Noise figure (dB) by channel

17-20GHz Mfc Down Converter CHR2292 Ref. : DSCHR22921201 -20-July-01 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 -14 -12 -10 Input RF power (dBm) IF power_I (dBm) Conv_gain I (dB) IF power_Q (dBm) Conv_gain Q (dB) Freq_RF= 18.3GHz Freq_OL= 9.65GHz Input RF compression by channel

17-20GHz Mfc Down Converter CHR2292 Ref. : DSCHR22921201 -20-July-01 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Assembly and Mechanical Data LO IN RF IN Q OUT I OUT To Vgm DC Gate Supply To Vgb DC Gate Supply To Vgx DC Gate Supply To Vga DC Gate Supply To Vdm,Vdl DC Drain Supply Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers )

Ref. : DSCHR22921201 -20-July-01 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Ordering Information

Chip form : CHR2292-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.