CHR1080A98F

CHR1080A98F_15 UMS | Alldatasheet

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Technical content

Ref. : DSCHR1080a5093 - 03 Apr 15 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 71-86GHz Down-converter GaAs Monolithic Microwave IC

Description

The CHR1080a98F is a multifunction monolithic receiver, which integrates a balanced sub-harmonic cold FET mixer, a LO buffer, and a RF low noise amplifier. It is designed for the E-band telecommunication application, particularly well suited for the new generation of high capacity backhaul. The circuit is manufactured with a pHEMT process, 0.10µm gate length. It is available in chip form. Main Features Conversion Gain ■ Broadband RF performances: 71-86GHz ■ 8dB Conversion Gain ■ 5dB Noise Figure ■ -10dBm Input Power at 1dB compression ■ DC bias: Vd=3.5V @Id=175mA ■ Chip size 3.43x2.24x0.07mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit FRF RF Frequency 71 86 GHz FIF IF frequency DC 12 GHz G Conversion gain 8 dB NF Noise Figure 5 dB DLO GX GLO GRF DRF LO RF Q I 71 73 75 77 79 81 83 85 Conversion Gain (dB) RF Frequency (GHz) LSB; IF= 10GHz LSB; IF= 6GHz USB; IF= 10GHz USB; IF= 6GHz

CHR1080a98F 71-86GHz Down-converter Ref. : DSCHR1080a5093 - 03 Apr 15 2/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Electrical Characteristics

Tamb.= +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit FRF RF Frequency range 71 86 GHz FLO LO Frequency range 34.5 44 GHz FIF IF output Frequency DC 10 12 GHz PLO LO input power 0 1 dBm Gc Conversion gain (1) 8 dB R_LO LO input return loss 8 dB R_RF RF input return loss 10 dB NF Noise Figure 5 dB Im_rej Image rejection (1) 16 dBc 2LO Leak. 2LO Leakage to RF port -38 dBm RFin P1dB RF Input power @1dB compression -10 dBm Idt Drain current (Id LO Buffer +Id LNA) (2) 175 mA DLO, DRF DC drain voltage (LO Buffer, LNA) 3.5 V GLO, GX, GRF LO Buffer, Mixer, LNA DC gate voltage -2 V (1) An external combiner 90° is required on I / Q. (2) LO drain quiescent current 85mA, LNA drain quiescent current 90mA. These values are representative of on -wafer measurements made without bonding wires at the RF & LO ports. A ribbon (75 µm wide) connection at the RF and LO inputs (see chapter recommended chip assembly) could improve the results.

71-86GHz Down-converter CHR1080a98F Ref. : DSCHR1080a5093 - 03 Apr 15 3/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4V V Idt Drain bias current 240 mA Vg Gate bias voltage -3.0 to -1.4 V Pin_LO Maximum LO peak input power overdrive (2) +10 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Pad name Pad No Parameter Typical Values Unit GRF 6 LNA DC gate voltage (1) -2 V DRF 7 LNA DC drain voltage (90mA) 3.5 V GX 8 Mixer DC gate voltage -2 V DLO 10 LO Buffer DC drain voltage (85mA) 3.5 V GLO 12 LO Buffer DC gate voltage -2.2 V 5, 9, 11 Not connected (1) LNA gate voltage could be adjusted between -3.0V and -1.4V to perform gain control

CHR1080a98F 71-86GHz Down-converter Ref. : DSCHR1080a5093 - 03 Apr 15 4/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements Tamb.= +25°C, Vd = +3.5V Without specific comment: GLO= -2.2V, GX= -2V, Pin_RF= -30dBm, Pin_LO= 1dBm, IF frequency = 10GHz GRF to be tuned for I_DRF= 90mA ( GRF close to -2V) LSB: RF= 2LO- IF; USB: RF= 2LO+ IF Conversion Gain versus RF Frequency & IF Frequency 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Conversion Gain (dB) RF Frequency (GHz) LSB; IF= 10GHz LSB; IF= 6GHz USB; IF= 10GHz USB; IF= 6GHz

71-86GHz Down-converter CHR1080a98F Ref. : DSCHR1080a5093 - 03 Apr 15 5/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements Tamb.= +25°C, Vd = +3.5V Image rejection versus RF Frequency & IF Frequency Conversion Gain versus RF Frequency & Mixer voltage 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Image Rejection (dBc) RF Frequency (GHz) IF= 10GHz; Infradyne mode IF= 10GHz; Supradyne mode IF= 6GHz IF= 6GHz 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Conversion Gain (dB) RF Frequency (GHz) Channel Q; VGX= -2V Channel Q; VGX=-1.8V Channel Q; VGX= -1.6V Channel I; VGX= -2V Channel I; VGX=-1.8V Channel I; VGX= -1.6V

CHR1080a98F 71-86GHz Down-converter Ref. : DSCHR1080a5093 - 03 Apr 15 6/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements Tamb.= +25°C, Vd = +3.5V Conversion Gain control versus LNA gate voltage GRF 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 LNA Drain Current (A) Conversion Gain (dB) Gate voltage LNA (V) RF= 2LO - IF; RF= 83GHz RF= 2LO + IF; RF= 73GHz Id_LNA

71-86GHz Down-converter CHR1080a98F Ref. : DSCHR1080a5093 - 03 Apr 15 7/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements Tamb.= +25°C, Vd = +3.5V RF return loss vs gate voltage GRF LO return loss versus Frequency Noise figure versus Frequency -20 -18 -16 -14 -12 -10 65 70 75 80 85 90 95 100 RF input return loss (dB) RF Frequency (GHz) GRF= -1.8V GRF= -2.2V GRF= -2.6V GRF= -3V -20 -18 -16 -14 -12 -10 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 LO input return loss (dB) LO Frequency (GHz) 3.5 4.5 5.5 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 RF Noise Figure (dB) RF Frequency (GHz)

CHR1080a98F 71-86GHz Down-converter Ref. : DSCHR1080a5093 - 03 Apr 15 8/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Mechanical data Chip thickness: 70µm. Chip size: 3430x2240 ±35µm All dimensions are in micrometers RF Pads = 108 x 106 (BCB opening) DC Pads = 86 x 83 (BCB opening) Recommended circuit bonding table Pin number Pin name Description Decoupling

1 LO LO in

2 I IF (I)

3 Q IF (Q)

4 RF RF in

6 GRF DC LNA Gate Voltage (-2V) 120pF, 10nF

7 DRF DC LNA drain Voltage (3.5V) 120pF, 10nF

8 GX DC Mixer Gate Voltage (-2V) 120pF, 10nF

11 DLO3 DC LO Buffer drain Voltage (3.5V) 120pF, 10nF 12 GLO DC LO buffer Gate Voltage (-2.2V) 120pF, 10nF 5, 9, 10 Not connected

71-86GHz Down-converter CHR1080a98F Ref. : DSCHR1080a5093 - 03 Apr 15 9/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended assembly plan The design integrates a half ribbon (75µm w ide) connection at the RF and LO input of the MMIC amplifier compliant with a 50Ohm line on GaAs MMIC. Circuits having to be as close as possible to each other, the ribbon length must be reduced to the achievable minimum (160µm gap between two chips is con sidered) and the loop height must also be the smallest realizable (80µm). A second solution is the use of double wires (Ø 25µm). In this case, a minimum of two wires and the same chip to chip distance as ribbon solution is necessary to reduce the induc tance effect. Nevertheless, simulations have demonstrated an improvement of RF performance for E-band frequency range with the use of ribbon connection instead of wire. Regarding the connection of the DC pads, a 25µm wedge bonding is preferred. LO RF GLO DLO3 GX DRF GRF Q I 120pF 120pF 120pF 120pF 120pF 10nF 10nF 10nF 10nF 10nF To external IF Hybrid To Vdd LO To Vdd RF To Vgg RF To Vgg LO To Vgg Mixer 75µm ribbon 160µm gap 50Ω line Ribbon(W75µm,length≈330µm ) MMIC CHR1080 Hyper access 160µm Hyper access 85µm

CHR1080a98F 71-86GHz Down-converter Ref. : DSCHR1080a5093 - 03 Apr 15 10/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 DC Schematic LNA: 3.5V, 90mA LO Buffer: 3.5V, 85mA 32  31mA 330  1.73 k 21mA 43  310  4.2 k 21mA 52.5  2.35 k 10.6 k GRF 200  17mA 90  2.35 k 12.2 k 1 k 500  400  1.1 k DRF 42mA 8  331  2.36 k 22mA 20  345 3.24 k GLO 30  21mA 20  579 4.6 k 750 30  DLO

71-86GHz Down-converter CHR1080a98F Ref. : DSCHR1080a5093 - 03 Apr 15 11/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Notes

CHR1080a98F 71-86GHz Down-converter Ref. : DSCHR1080a5093 - 03 Apr 15 12/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com.

Ordering Information

Chip form: CHR1080a98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which m ay result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supe rsedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.