CHM2378-99F/00

CHM2378A UMS | Alldatasheet

Document overview

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Technical content

Ref. : DSCHM23781269 -26-Sep.-01 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Dual Channel Mixer GaAs Monolithic Microwave IC

Description

The CHM2378 is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The non- linear devices are high quality Schottky diodes providing low conversion loss and very low 1/f noise. This circuit is manufactured with the BES- MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. Main Features /G6e/G20W-band LO and RF frequency range /G6e/G20Low conversion loss /G6e/G20IF from DC to 100MHz /G6e/G20High LO/RF isolation /G6e/G20High LO/AM noise rejection /G6e/G20Very low 1/f noise /G6e/G20Low LO input power /G6e/G20Automatic assembly oriented /G6e/G20Chip size: 1.98 x 2.07 x 0.10 mm RF1 IF2 IF1 RF2 LO Dual channel mixer block diagram -15 -14 -13 -12 -11 -10 75 75,5 76 76,5 77 77,5 78 LO frequency (GHz) Conversion gain (dB) Typical conversion characteristic LO power = 8dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit F_lo, F_rf LO,RF frequency 76 76.5 77 GHz F_if IF frequency range DC-100 MHz Lc Conversion loss 7.5 9.5 dB I_lo/rf LO/RF isolation 25 dB N_if IF noise @ 100kHz -162 dBm/Hz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

CHM2378a W-band Dual Channel Mixer Ref. DSCHM23781269 -26-Sep.-01 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Full operating temperature range, used according to section “Typical assembly and bias configuration” Symbol Parameter Min Typ Max Unit F_lo, F_rf LO,RF frequency 76 77 GHz F_if IF frequency range DC-100 MHz Lc Conversion loss 4.5 7.5 9.5 dB |(d(∆Lc)/dT)* ∆T| Conversion loss difference from chip to chip versus temperature 0.3 (to be confirmed) dB P_lo LO input power 4 7 11 dBm P_RF_1dB RF input power at 1 dB -3 0 dBm VSWR_lo LO port VSWR (50Ω ) 2:1 2.5:1 VSWR_rf RF port VSWR (50Ω ) 2:1 2.5:1 IMP_if IF load impedance (1) 200 Ω I_lo/rf LO/RF isolation 20 25 dB I_rf1/rf2 Isolation between RF channels 25 30 dB I_rfi/rfj Isolation between RF and IF channels 25 30 dB R_lo_am LO AM noise rejection (SSB) 25 30 dB Noise figure for IF=1kHz (2) 34 39 dB Noise figure for IF=10kHz (2) 28 33 dB Noise figure for IF=100kHz (2) 20.5 25.5 dB NF Noise figure for IF=200kHz (2) 17 22 dB +V Positive supply voltage (3) 4.5 V +I Positive supply current (3) 1.5 2.5 mA Top Operating temperature range -40 +100 °C (1) The IF optimum load for conversion loss is 200 Ω . For minimum noise figure this load can be lower, the best results have been obtained on 50Ω . (2) Measured on 200Ω IF impedance. (3) An external resistor controls the bias current (see section “Typical Assembly and Bias Configuration”)

W-band Dual Channel Mixer CHM2378a Ref. DSCHM23781269 -26-Sep.-01 3/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Absolute Maximum Ratings (1) Symbol Parameter Values Unit +V Supply voltage 6 V +I Supply current (for one input) 2.5 mA P_lo Maximum peak input power overdrive at LO port (2) 12 dBm P_rf_cw Maximum input power at RF port (3) 3 dBm Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s (3) Continuous wave mode.

CHM2378a W-band Dual Channel Mixer Ref. DSCHM23781269 -26-Sep.-01 4/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Mechanical Data and Pin References 45 6 78 19 18 17 16 15 Unit = µm External chip size (including dicing streets) = 1980 x 2070 ± 35 Chip thickness = 100 +/- 10 HF Pads (2,10,13) = 68 x 118 DC/IF Pads = 100 x 100 Pin number Pin name 1,3,9,11,12,14 Ground : should not be bonded. If required, please ask for more information. 6,17 Ground (optional) 7,16 Not Connected

2 LO LO input

4 +V1 Positive supply voltage 1

5 C1 Bias 1 decoupling

8 IF1 First IF output

10 RF1 First RF input

13 RF2 Second RF input

15 IF2 Second IF output

18 C2 Bias 2 decoupling

19 +V2 Positive supply voltage 2

W-band Dual Channel Mixer CHM2378a Ref. DSCHM23781269 -26-Sep.-01 5/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 External components for bias and IF Several external configurations are possible for bias and IF. The objective is to give flexibility for the integration. As this component is mainly dedicated to low IF use, there are several possibilities for interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200 Ω , however the best results on noise figure have been obtained on 50 Ω . Depending on the IF amplifier noise characteristic this load can be modified in order to optimise the noise figure.. A series capacitor, between IF output and the load is recommended. Due to high sensitivity to electrical discharges an integrated resistance is used and two ports are available for biasing each mixer. One is for the connection of a decoupling capacitor (C1, C2) and the other one is for the supply voltage connection through an external series resistance (+V1, +V2). However, if necessary only the “C1, C2” ports can be used. RF1 RF2 LO IF2V2C2 IF1V1C1 Block diagram of the MMIC RF1 RF2 LO V2C2 IF1V1C1 R_bias R_load_IF R_bias C_IF IF2 R_load_IF C_IF Recommended IF/DC external configuration The recommended values for external components are: R_bias_t 2.5kΩ for 1.5mA current consumption (V = 4.5V, typical LO power) R_load_if From 50 to 200Ω Notes:: 1. R_bias_t = R_bias + 1k Ω when V1 and V2 ports are used. 2. R_bias_t can be adjusted if necessary; This allows to optimise the performances when some parameters are different from recommended (Supply voltage, LO power …). However maximum ratings for the current have to be taken into account. 3. A series capacitor at IF outputs is recommended for DC decoupling.

CHM2378a W-band Dual Channel Mixer Ref. DSCHM23781269 -26-Sep.-01 6/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Assembly Configuration L_lo µ-strip line L_rf2 µ-strip line L_rf1 µ-strip line R_bias +V IF1120pF R_bias +V IF2120pF This drawing shows an example of assembly configuration. The bias and IF inter- connections are according to the example given in the previous chapter. For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to be according to the following recommendation. Port Equivalent inductance (nH) Approximative wire length (mm) RF1 (10) L_rf1 = 0.26 0.33 RF2 (13) L_rf2 = 0.26 0.33 For a micro-strip configuration a hole in the substrate is recommended for chip assembly. As the connections at 77GHz (between MMIC and MMIC or between MMIC and external substrate) are critical, the transition matching network is split into two parts: one on MMIC and one on the external substrate. This choice allows to do both kind of connections.

W-band Dual Channel Mixer CHM2378a Ref. DSCHM23781269 -26-Sep.-01 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 In the case of connection from MMIC to an external substrate a network is proposed on soft substrate for LO, RF1 and RF2 ports. The following drawings give the dimensions (in mm) for a DUROID substrate (thickness=0.127mm, εr=2.2). 0.94 0.25 0.42 0.15 = Bonding area Proposed matching network for a 50ΩΩΩΩ transition between LO and a µ-strip line on DUROID substrate 0.73 0.2 0.325 0.2 = Bonding area Proposed matching network for a 50ΩΩΩΩ transition between RF1/RF2 and µ- strip lines on DUROID substrate.

CHM2378a W-band Dual Channel Mixer Ref. DSCHM23781269 -26-Sep.-01 8/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Ordering Information

Chip form : CHM2378-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.