CHM1080-98F

CHM1080-98F UMS | Alldatasheet

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Technical content

Ref. : DSCHM10803329 - 25 Nov 13 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 71-86GHz Single Side Band Mixer GaAs Monolithic Microwave IC

Description

The CHM1080-98F is a multifunction monolithic mixer, which integrates a balanced sub-harmonic cold FET mixer, with a LO buffer . It is usable both for up - conversion and down -conversion and also compatible with Baseband configuration. It is designed for the E-band telecommunication application, particularly well suited for the new generation of high capacity backhaul. The circuit is manufac tured with a pHEMT process, 0.10µm gate length. It is available in chip form. Main Features Conversion Gain ■ Broadband RF performances: 71-86GHz ■ -11dB Conversion Gain ■ 40dB 2LO isolation ■ 10dBm Input Power at 1dB compression ■ DC bias: Vd=3.5V @Id=90mA ■ Chip size 3.43x1.5x0.07mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit FRF RF Frequency 71 86 GHz FIF IF frequency DC 12 GHz Gc Conversion gain -11 dB RFin P1dB RF input power @1dB comp. 10 dBm D GX G LO_IN RF Q I -15 -14 -13 -12 -11 -10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Conversion Gain (dB) RF Frequency (GHz) USB LSB

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 2/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Electrical Characteristics

Tamb.= +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit FRF RF Frequency range 71 86 GHz FLO LO Frequency range 34.5 44 GHz FIF IF output Frequency DC 6 12 GHz PLO LO Input Power 2 dBm Gc Conversion Gain (1) -11 dB R_LO LO Input return loss 10 dB LO/ RF LO Isolation on RF port 17 dB 2LO/ RF 2LO Isolation on RF port 16 dB 2LO/ RF 2LO Isolation on RF port with DC voltage on I/ Q ( V_I & V_Q) (2) 40 dB Im_rej Image rejection (1) 15 dBc IFin P1dB IF Input power @1dB comp. 0 dBm RFin P1dB RF input power @1dB comp. 10 dBm V_I & V_Q DC voltage on I & Q (3) -500 500 mV Id Drain current (Id LO Buffer) (4) 90 mA D DC drain voltage (LO Buffer) 3.5 V G DC gate voltage (LO Buffer ) -2.2 V GX Mixer DC gate voltage -2 V (1) An external combiner 90° is required on I / Q. (2) In baseband configuration, a DC voltage on I & Q could be applied to cancel the 2LO leakage (3) V_I & V_Q should be tuned independently for each frequency, temperature (4) LO Buffer quiescent current 85mA These values are representative of on -wafer measurements that are made without bonding wires at the RF & LO ports. A ribbon (75 µm wide) connection at the RF and LO inpu ts (see chapter recommended chip assembly) could improve the results.

71-86GHz Single Side Band Mixer CHM1080-98F Ref. : DSCHM10803329 - 25 Nov 13 3/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4V V Id Drain bias quiescent current 120 mA VG, VGx Gate bias voltage -3 to -0.2 V Pin_LO Maximum LO peak input power overdrive (2) +10 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Pad name Pad No Parameter Typical Values Unit G 9 LO Buffer DC gate voltage (1) -2.2 V D 7 LO Buffer DC drain voltage (85mA) 3.5 V GX 8 Mixer DC gate voltage -2 V 6, 7 Not connected (1) Gate voltage should be adjusted to reach 85mA through pad D.

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 4/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements as Down converter Tamb.= +25°C, Vd = +3.5V Measurement conditions, base line: GX= -2V, Pin_RF= -15dBm, Pin_LO= 2dBm, IF Frequency = 10GHz G tuned for Id_LO= 85mA ( G close to -2.2V) USB: RF= 2LO+ IF; LSB: RF= 2LO-IF Measure with external IF 90° hybrid Conversion Gain versus RF Frequency & Mixer Voltage GX -15 -14 -13 -12 -11 -10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Conversion Gain (dB) RF Frequency (GHz) LSB; GX= -2V LSB; GX=-1.8V LSB; GX= -1.6V USB; GX= -2V USB; GX=-1.8V USB; GX= -1.6V

71-86GHz Single Side Band Mixer CHM1080-98F Ref. : DSCHM10803329 - 25 Nov 13 5/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements as Down converter Tamb.= +25°C, Vd = +3.5V Image rejection versus RF Frequency & Mixer Voltage GX LO Isolation versus LO Frequency 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Image Rejection (dBc) RF Frequency (GHz) LSB; GX= -2V USB; GX= -2V GX= -1.8V GX= -1.8V GX= -1.6V GX=-1.6V 35 36 37 38 39 40 41 42 43 44 2LO/ RF (dB) LO Frequency (GHz)

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 6/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements as Down converter Tamb.= +25°C, Vd = +3.5V Note: measured without external IF 90° hybrid Conversion Gain versus RF frequency & IF Frequency -18 -17 -16 -15 -14 -13 -12 -11 -10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Conversion Gain (dB) RF Frequency (GHz) IF= 6GHz IF= 10GHz IF= 12GHz

71-86GHz Single Side Band Mixer CHM1080-98F Ref. : DSCHM10803329 - 25 Nov 13 7/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements as Up converter Tamb.= +25°C, Vd = +3.5V Measurement conditions, base line: GX= -2V, Pin_IF= -10dBm, Pin_LO= 2dBm, IF Frequency = 6GHz G tuned for Id_LO= 85mA ( G close to -2.2V) USB: RF= 2LO+ IF; LSB: RF= 2LO-IF Measure with external IF 90° hybrid Conversion Gain versus RF frequency -15 -14 -13 -12 -11 -10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Conversion Gain (dB) RF Frequency (GHz) USB LSB

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 8/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements as Up converter Tamb.= +25°C, Vd = +3.5V Image rejection versus RF frequency Isolation versus LO Frequency 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Image rejection (dBc) RF Frequency (GHz) LSB USB 37 38 39 40 41 42 Isolation (dB) LO Frequency (GHz) 2LO/ RF LO/ RF

71-86GHz Single Side Band Mixer CHM1080-98F Ref. : DSCHM10803329 - 25 Nov 13 9/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements as Up converter Tamb.= +25°C, Vd = +3.5V Conversion Gain versus LO power 2LO leakage versus LO power Conversion Gain versus Mixer Voltage 2LO leakage versus Mixer Voltage Conversion Gain & LO buffer current versus LO Buffer Voltage G 2LO leakage vs LO Buffer Voltage -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 Conversion Gain (dB) LO power (dBm) RF= 81GHz USB RF= 86GHz USB RF= 71GHz LSB RF= 76GHz LSB -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 2LO / RF (dBm) LO power (dBm) LO= 37.5GHz LO= 38GHz LO= 38.5GHz LO= 39GHz LO= 39.5GHz LO= 40GHz LO= 40.5GHz LO= 41GHz -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 Conversion Gain (dB) GX voltage(V) RF= 81GHz USB RF= 86GHz USB RF= 71GHz LSB RF= 76GHz LSB -50 -45 -40 -35 -30 -25 -20 -15 -10 2LO / RF (dBm) GX voltage (V) LO= 37.5GHz LO= 38GHz LO= 38.5GHz LO= 39GHz LO= 39.5GHz LO= 40GHz LO= 40.5GHz LO= 41GHz 100 110 120 -20 -18 -16 -14 -12 -10 LO Buffer current (mA) Conversion Gain (dB) G voltage (V) RF= 81GHz USB RF= 86GHz USB Id_LO -50 -45 -40 -35 -30 -25 -20 -15 -10 2LO / RF (dBm) G voltage (V) LO= 37.5GHz LO= 38GHz LO= 38.5GHz LO=39GHz LO= 39.5GHz LO= 40GHz

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 10/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements as Up converter Tamb.= +25°C, Vd = +3.5V Input power compression versus RF Frequency LO return loss versus Frequency 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Input power compression (dBm) RF Frequency (GHz) P_LO= 0dBm P_LO= 2dBm -20 -18 -16 -14 -12 -10 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 LO input return loss (dB) LO Frequency (GHz)

71-86GHz Single Side Band Mixer CHM1080-98F Ref. : DSCHM10803329 - 25 Nov 13 11/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical on wafer Measurements in Baseband configuration Tamb.= +25°C, Vd = +3.5V Measure with low IF at 10MHz, with 90° between I and Q signal GX= -2V, Pin_IF= -10dBm, Pin_LO= 2dBm G tuned for Id_LO= 85mA ( G close to -2.2V) Conversion Gain & Image Rejection versus RF Frequency Isolation versus LO Frequency (1) (1) In baseband configuration, a DC voltage on I & Q could be applied to cancel the 2LO leakage. V_ V_I & V_Q should be tuned independently for each frequency and temperature. -10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 Conversion Gain & Image rejection (dB & dBc) RF Frequency (GHz) USB LSB Image rejection USB Image rejection LSB 35 36 37 38 39 40 41 42 43 LO Isolation (dB) LO Frequency (GHz) 2LO/ RF without DC voltage 2LO/ RF with DC voltage LO/ RF

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 12/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Mechanical data Chip thickness: 70µm. Chip size: 3430x1500 ±35µm All dimensions are in micrometers RF Pads = 108 x 106 (BCB opening) DC Pads = 86 x 83 (BCB opening) Recommended circuit bonding table Pin number Pin name Description Decoupling

1 LO LO In

2 I IF (I)

3 Q IF (Q)

4 RF RF in-out

5 GX DC Mixer Gate Voltage (-2V) 120pF, 10nF

6, 7 Not connected 8 D DC LO Buffer Drain Voltage (3.5V) 120pF, 10nF 9 G DC LO Buffer Gate Voltage (-2.2V) 120pF, 10nF

71-86GHz Single Side Band Mixer CHM1080-98F Ref. : DSCHM10803329 - 25 Nov 13 13/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended assembly plan The design integrates a half ribbon (75µm wide) connection at the RF and LO input of the MMIC amplifier compliant with a 50Ohm line on GaAs MMIC. Circuits having to be as close as possible to each other, the ribbon length must be reduced to the achievable minimum (160µm gap between two chips is considered) and the loop height must also be the smallest realizable (80µm). A second solution is the use of double wires (Ø 25µm). In this case, a minimum o f two wires and the same chip to chip distance than ribbon solution are necessary to reduce the inductance effect. Nevertheless, simulations have demonstrated an improvement of RF performance for E-band frequency range with the use of ribbon connection instead of wire. Regarding the connection of the DC pads, a 25µm wedge bonding is preferred. GX D G LO RF I Q 120pF 120pF 120pF 10nF 10nF 10nF To external IF Hybrid To Vdd LO To Vgg mixer To Vgg LO 75µm ribbon 160µm gap 50Ω line Ribbon(W75µm,length≈330µm ) MMIC CHM1080 Hyper access 160µm Hyper access 85µm

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 14/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 DC Schematic LO Buffer: 3.5V, 85mA 42mA 8  331  2.36 k 22mA 20  345 3.24 k G 30  21mA 20  579 4.6 k 750 30  D 6.5 

71-86GHz Single Side Band Mixer CHM1080-98F Ref. : DSCHM10803329 - 25 Nov 13 15/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Notes

CHM1080-98F 71-86GHz Single Side Band Mixer Ref. : DSCHM10803329 - 25 Nov 13 16/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com.

Ordering Information

Chip form: CHM1080-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such informatio n nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support device s or systems without express written approval from United Monolithic Semiconductors S.A.S.