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Ref. : DSCHK80156315 - 10 Nov 16 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com 16W Power Transistor GaN HEMT on SiC

Description

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die fo rm and requires an external matching circuitry. Main Features ■ Wide band capability up to 18GHz ■ Pulsed and CW operating modes ■ GaN technology: High Pout & High PAE ■ DC bias: VD=30V @ID_Q=200mA ■ Chip size 0.88x2x0.1mm ■ RoHS N°2011/65 ■ REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA Symbol Parameter Min Typ Max Unit GSS Small Signal Gain 17 dB PSAT Saturated Output Power 20 W PAE Max Power Added Efficiency 68 % GPAE_MAX Associated Gain at Max PAE 11 dB These values are deduced from elementary power cell performances

CHK8015-99F 16W Power Transistor Ref. : DSCHK80156315 - 10 Nov 16 2/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Recommended Operating Ratings Tref = +25°C Symbol Parameter Min Typ Max Unit Conditions VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage -3.3 V VDS=30V, ID_Q=200mA VDG_peak Drain-Gate Voltage 80 V DC+RF VGS_peak Gate-Source Voltage -20 V DC+RF ID_Q Quiescent Drain Current 0.2 0.46 A VDS=30V ID_MAX Drain Current 1 (1) A VDS=30V, Compressed mode IG_MAX Gate Current in forward mode 0 16 mA DC or Compressed mode Tj_MAX Junction temperature 200 °C (1) (1) Power dissipation must be considered DC Characteristics Tref = +25°C Symbol Parameter Min Typ Max Unit Conditions VP Pinch-Off Voltage -4 -3.4 -2.8 V VD=10V,ID= IDSS /100 ID_SAT Saturated Drain Current 3.6 A (1), VD=10V, VG=1V IG_leak Gate Leakage Current -0.8 mA VD=50V, VG=-7V VBDG Drain-Gate Break -down Voltage 120 V VG=-7V, ID=20mA RTH Thermal Resistance 6 °C/W CW mode, Tref=75°C,(2) (1) For information, limited by ID_MAX , see on ROR & AMR (2) The thermal resistance is given for the power bar mounted on carrier plate (20µm Au/Sn soldering + 1.4mm Cu/Mo/Cu). The reference temperature is defined on the carrier back side. Thermal analysis is highly recommended, more details are available on request. RF Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA Symbol Parameter Min Typ Max Unit Conditions GSS Small Signal Gain 17 dB PSAT Saturated Output Power 20 W PAE Max Power Added Efficiency 68 % GPAE_MAX Associated Gain at Max PAE 11 dB These values are deduced from elementary power cell performances

16W Power Transistor CHK8015-99F Ref. : DSCHK80156315 - 10 Nov 16 3/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Absolute Maximum Ratings Symbol Parameter Rating Unit Note VDS_Q Drain-Source Biasing Voltage 55 V VGS_Q Gate-Source Biasing Voltage -10, +2 V VDG_peak Drain-Gate Voltage (DC+RF) 120 V VGS_peak Gate-Source Voltage (DC+RF) -25 V IG_MAX Maximum Gate Current 32 mA IG_MIN Minimum Gate Current -2 mA ID_MAX Maximum Drain Current See note A (4) PIN Maximum Input Power See note dBm (5) Tj Maximum Junction Temperature 230 °C TSTG Storage Temperature -55 to +150 °C TCase Case Operating Temperature See note °C (4) (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. (3) The given values must not be exceeded at the same time even momentarily for any parameter, since each parameter is independent from each other, otherwise deterioration or destruction of the device may take place. (4) Max junction temperature must be considered (5) Linked to and limited by Ig_max & Ig_min values. Maximum input power depends on frequency and should not exceed 2dB above PAE_max.

CHK8015-99F 16W Power Transistor Ref. : DSCHK80156315 - 10 Nov 16 4/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Power Bar Description The devi ce is composed of 4 elementary 4 W cells. These cells are connected together with a specific network providing a good trade -off between performance and stability (resistance between gates and drains as described on the schematic ). The reference plans are on the center of the bonding pads. A multiport non-linear model is available on request. 4-cells Power Bar

16W Power Transistor CHK8015-99F Ref. : DSCHK80156315 - 10 Nov 16 5/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Elementary Cell Maximum Gain & Stability Characteristics Tref = +25°C, VDS = +30V, ID_Q = 50mA, simulated results Elementary Cell Load Pull Performances Tref = +25°C, VDS = +30V, ID_Q = 50mA, simulated results The impedances are chosen as a trade -off between Output Power, PAE and Stability of the device. Second harmonic of output load has been tuned. These values are given in the bonding pads reference plan. Frequency (GHz) Zs Zl Gain (dB) @PAEmax PAEmax (%) Pout (W) @PAEmax Poutmax (W) 3 15 + j18 60 + j65 12.8 72 4.9 5.3 12 2.1 + j3.5 8 + j24 10 52 3.8 4.8 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 K Factor MAG (dB) Frequency (GHz) K Factor MAG K Factor MAG Zl Zs

CHK8015-99F 16W Power Transistor Ref. : DSCHK80156315 - 10 Nov 16 6/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Mechanical data Chip thickness: 100µm +/- 10 µm All dimensions are in micrometers GND pads (1, 3, 5, 7, 9, 10, 12, 14, 16, 18) = 99x130µm² DC Gate pads (2, 4, 6, 8) = 214 x 120µm² DC Drain pads (11, 13, 15, 17) = 214 x 120µm²

16W Power Transistor CHK8015-99F Ref. : DSCHK80156315 - 10 Nov 16 7/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Notes

CHK8015-99F 16W Power Transistor Ref. : DSCHK80156315 - 10 Nov 16 8/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com Qualification domain This part is qualified according to UMS standards, excluding humid environment. User guide for MMIC storage, pick & place, die attach, wire bonding Refer to the application note AN0001 available at http://www.ums-gaas.com for general recommendations on chip handling. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. User guide GaN Power Bars Assembly guide lines Refer to the application note AN0026 available at http://www.ums-gaas.com for general recommendations on SiC Transistor handling and assembly.

Ordering Information

Chip form: CHK8015-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.