CHE1260

CHE1260 UMS | Alldatasheet

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Technical content

Ref : DSCHE1260-8058 - 28 Feb 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC

Description

The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. It allows the measurement of transmitted and reflected power. It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate and air bridges. It is available in chip form. Main Features ■ Wide frequency range 10-27GHz ■ Bidirectionnal detection ■ 30dB dynamic range ■ ESD protected ■ Chip size: 1.41 x 1.41 x 0.1 mm ■ BCB layer protection (see page 8) Main Characteristics Tamb = +25° C, VDC = +4.5V (on DC_I and DC_R) Symbol Parameter Min Typ Max Unit F Frequency range 10 27 GHz IL Insertion Loss 0.8 dB Dr Dynamic Range 30 dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_R DC_I Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_R DC_I Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_R DC_I Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_R DC_I Incident power detection (mV) 100 1000 10000 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Vref_I - Vdet_I (mV) 10GHz 12GHz 17GHz 22GHz 27GHz

Ref. : DSCHE1260-8058 - 28 Feb 08 2/8 Specification s subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Electrical Characteristics

Tamb = +25° C, VDC = +4.5V (on DC_I and DC_R) Symbol Parameter Min Typ Max Unit F Frequency range 10 27 GHz IL Insertion Loss 0.8 dB Cd Coupler Directivity 13 dB Dr Dynamic Range 30 dB Pr Power Range: 10 - 17GHz 17 - 21GHz 21 - 24GHz 24 - 27GHz (for transmitted and/or reflected power) dBm Vdetect_I Voltage detection from transmitted power Vref_I – Vdet_I From Pr_min to Pr_max to 2500 mV Vdetect_R Voltage detection from reflected power Vref_R – Vdet_R From Pr_min to Pr_max to 2500 mV RLin Input return loss -11 dB RLout Output return loss -11 dB VDC Bias Voltage 4.5 V IDC Bias Current (on ports DC_I or DC_R) 33 µA These values are representative of on-wafer measurements that are made without bonding wires at the RF ports but with 100kΩ resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes, page 8). Absolute Maximum Ratings (1) Tamb = +25° C Symbol Parameter Values Unit VDC Bias voltage (on ports DC_I and DC_R) 6 V Top Operating temperature range -40 to +85 ° C Tstg Storage temperature range -55 to +125 ° C P_max Maximum power (for transmitted and/or reflected power) 30 dBm (1) Operation of this device above anyone of these paramaters may cause permanent damage.

Ref: DSCHE1260-8058 - 28 Feb 08 3/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Typical on-wafer Sij parameters Tamb = +25° C, Vdc = +4.5V (on DC_I and DC_R), 100k Ω resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes, page 8). Freq (GHz) dB(S11) Ph(S11) (° ) dB(S12) Ph(S12) (° ) dB(S21) Ph(S21) (° ) dB(S22) Ph(S22) (° ) 28 -11.1 -90 -1.0 175 -1.0 175 -11.0 -89 29 -11.4 -95 -1.0 168 -0.9 168 -11.2 -93 30 -11.9 -100 -1.0 161 -1.0 161 -11.7 -97 31 -12.5 -104 -1.0 154 -1.0 154 -12.3 -101 32 -13.3 -108 -1.0 147 -1.0 147 -13.0 -103 33 -14.4 -108 -1.1 140 -1.1 140 -13.7 -105 34 -15.1 -104 -1.1 133 -1.1 133 -14.9 -103 35 -16.9 -108 -1.1 125 -1.1 125 -16.3 -104 36 -19.0 -99 -1.1 118 -1.1 118 -18.0 -92 37 -20.3 -79 -1.1 110 -1.1 110 -19.0 -74 38 -20.8 -51 -1.1 102 -1.1 102 -18.9 -51

Ref. : DSCHE1260-8058 - 28 Feb 08 4/8 Specification s subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Typical Measured Performance On-wafer measurements (without bonding wires at RF ports). Tamb = +25° C, Vdc = +4.5V (on DC_I and DC_R), 100k Ω resistor in parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes, page 8). Insertion Loss versus frequency -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Frequency (GHz) IL (dB) Input and Output Return Losses versus frequency -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Frequency (GHz) Return Losses (dB) RLin RLout

Ref: DSCHE1260-8058 - 28 Feb 08 5/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Incident power detection versus Incident power @ different frequencies (Vdetect_I) 100 1000 10000 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Vref_I - Vdet_I (mV) 10GHz 12GHz 17GHz 22GHz 27GHz The CHE1260-98F is a bidirectionnal detector using a symmetrical bidirectionnal coupler. Therefore the incident power detection versus incident power is identical to the reflective power detection versus reflected power. The reflective power detection versus incident power depends on both the coupler directivity and the reflective environment of the chip. Incident and reflective power detection versus Incident power @ 10GHz (Vdetect_I & Vdetect_R) 100 1000 10000 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Vref_I - Vdet_I & Vref_R-Vdet_R (mV) Incident Reflective

Ref. : DSCHE1260-8058 - 28 Feb 08 6/8 Specification s subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Incident and reflective power detection versus Incident power @ 17GHz (Vdetect_I & Vdetect_R) 100 1000 10000 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Vref_I - Vdet_I & Vref_R-Vdet_R (mV) Incident Reflective Incident and reflective power detection versus Incident power @ 22GHz (Vdetect_I & Vdetect_R) 100 1000 10000 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Vref_I - Vdet_I & Vref_R-Vdet_R (mV) Incident Reflective

Ref: DSCHE1260-8058 - 28 Feb 08 7/8 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Incident and reflective power detection versus Incident power @ 27GHz (Vdetect_I & Vdetect_R) 100 1000 10000 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 Incident power (dBm) Vref_I - Vdet_I & Vref_R-Vdet_R (mV) Incident Reflective Chip assembly and Mechanical data: DC Pads Size: 100/100 µm, Chip thickness: 100 µm Note: Supply feed might be capacitively bypassed. 25 µm diameter gold wire is to be prefered.

Ref. : DSCHE1260-8058 - 28 Feb 08 8/8 Specification s subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Note Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_R DC_I Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_I 100k ΩΩ ΩΩ 100k ΩΩ ΩΩ 100k ΩΩ ΩΩ 100k ΩΩ ΩΩ Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_R DC_I Vdet_I RF_in RF_out Vref_I Vdet_R Vref_R DC_I 100k ΩΩ ΩΩ 100k ΩΩ ΩΩ 100k ΩΩ ΩΩ 100k ΩΩ ΩΩ Recommended external resistors assembly 100k Ω resistors in parallel with Vdet_I, Vref_I, Vdet_R and Vref_R pads are recommended to provide the best behaviour in the whole operating temperature range. As the voltage detection is the difference between Vref_X and Vdet_X (X= I or R), the external resistor value should be identical on these ports. For information, a variation of 2% leads around 1mV variation of detected voltage. ESD protections are implemented on Vdet_I, Vref_I, Vdet_R and Vref_R accesses. Due to the BCB coating on the chip, qualification domain implies the chip must be glued.

Ordering Information

Chip form: CHE1260-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S