CHA3667AQDG

CHA3667AQDG UMS | Alldatasheet

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Technical content

Ref: DSCHA3667aQDG7296 - 23 Oct 07 1/14 Specificati ons subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package

Description

The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a Power- HEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. It is available in lead-free SMD package. Main Features ■ Broadband performance 7-20GHz ■ Self-biased ■ 23dB gain @2.7dB noise figure ■ 20dBm Output power@1dB compression ■ DC power consumption, 175 mA @4.2V ■ 24L-QFN4X4 SMD package ■ ESD protected Main Characteristics Tamb. = 25° C, Vd = 4.2V Symbol Parameter Min Typ Max Unit Fop Input frequency range 7 20 GHz G Small signal gain 23 dB NF Noise Figure 2.7 dB P-1dB Output power at 1dB gain compression 20 dBm Id Bias current 175 mA ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions S Param eters versus frequency -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Freq ( GHz) Gain & Input / Output return loss (dB) S11 S22 S21 UMS A3667A YYWWG UMS A3667A YYWWG UMS A3667A YYWWG Vd RFin RFout Vd RFin RFout

CHA3667aQDG 7-20GHz Amplifier Ref.:DSCHA3667aQDG7296 - 23 Oct 07 2/14 Specificati ons subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Electrical Characteristics

Tamb. = 25° C, Vd = 4.2V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 7 20 GHz G Gain (7-8GHz) (8-19GHz) (19-20GHz) dB NF Noise figure (7-18 GHz) 2.7 dB RLin Input Return Loss -10(1) dB RLout Output Return Loss -10 dB IP3 Output IP3 28 dBm P-1dB Pout at 1dB gain compression: ( 7-13 GHz) (13-20 GHz) dBm dBm Isol Reverse isolation 40 dB Vd Drain bias voltage 4.2 V Id Drain bias current 175 mA (1) Rlin<-6dB from 19.5GHz to 20 GHz

7-20GHz Amplifier CHA3667aQDG Ref: DSCHA3667aQDG7296 - 23 Oct 07 3/14 /Specificat ions subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Absolute Maximum Ratings (1) Tamb = +25° C Symbol Parameter Values Unit Vd Drain bias voltage 4.5V V Id Power supply quiescent current 240 mA Pin RF input power (2) 3 dBm Top Operating temperature range -40 to +85 ° C Tj Junction temperature (3) 175 ° C Tstg Storage temperature range -55 to +125 ° C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration<1s (3) Thermal Resistance channel to ground paddle =101.1° C/W for Tamb. = +85° C Vd=4.2V & id=175mA

CHA3667aQDG 7-20GHz Amplifier Ref.:DSCHA3667aQDG7296 - 23 Oct 07 4/14 Specificati ons subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Typical Measured Performance: Tamb = +25° C, Vd= +4.2V Id = 175mA S parameters versus Frequency Measurements in the the plan of the connectors , using the proposed land pattern & board 96270_B . Noise Figure versus Frequency Result in the package access planes -20 -16 -12 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Gain & Input/Output Return Loss (dB) S11 S22 S21 S21 5 7 9 11 13 15 17 19 21 Frequency ( GHz) NF( dB)

7-20GHz Amplifier CHA3667aQDG Ref: DSCHA3667aQDG7296 - 23 Oct 07 5/14 /Specificat ions subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Ouput Power & associated Consumption Id @ 1dB compression Output IP3 versus Single Output Power 2 4 6 8 10 12 14 16 18 Single output power (dBm) Output IP3 ( dBm) IP3 (7GHz & +25° C) IP3 (8GHz & +25° C) IP3 (10GHz & +25° C) IP3 (14GHz & +25° C) IP3 (18GHz & +25° C) IP3 (20GHz & +25° C) Vd=4.2V 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz) P-1dB (dBm) 100 120 140 160 180 200 220 240 260 280 300 Consumption for P-1dB ( mA)

CHA3667aQDG 7-20GHz Amplifier Ref.:DSCHA3667aQDG7296 - 23 Oct 07 6/14 Specificati ons subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Typical Measured Performance in temperature: ( -40°C to 85° C) Measurements in the the plan of the connectors , using the proposed land pattern & board 96270_B . Linear Gain versus Frequency and Temperature Reverse isolation versus Frequency and Temperature 5 7 9 11 13 15 17 19 21 Frequency (GHz) Gain (dB) +85 ° C -40° C +25 ° C -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 5 7 9 11 13 15 17 19 21 Frequency (GHz) Reverse Isolation(dB) +85 ° C -40° C +25 ° C

7-20GHz Amplifier CHA3667aQDG Ref: DSCHA3667aQDG7296 - 23 Oct 07 7/14 /Specificat ions subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Noise Figure versus Frequency and Temperature Consumption (Id) versus Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 7 9 11 13 15 17 19 21 Frequency ( GHz) NF( dB) -40 ° C 25 ° C 85 ° C 160 165 170 175 180 185 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Temperature (° C) Consumption Id (mA)

CHA3667aQDG 7-20GHz Amplifier Ref.:DSCHA3667aQDG7296 - 23 Oct 07 8/14 Specificati ons subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Gain and Pout versus Frequency and Temperature @ 7 GHz Gain and Pout versus Frequency and Temperature @ 16 GHz Gain and Pout versus Frequency and Temperature @ 20 GHz Pout @1dBc versus Frequency and Temperature -40°C +85°C +25°C -40°C +85°C +25°C -40°C +85°C +25°C 7 9 11 13 15 17 19 Freq ( GHz) Pout @ 1dBc (dBm) -40°C +85°C C +25°C

7-20GHz Amplifier CHA3667aQDG Ref: DSCHA3667aQDG7296 - 23 Oct 07 9/14 /Specificat ions subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Vd= +4.2V Output IP3 versus Single Output Power and Temperature @ 7 GHz Output IP3 versus Single Output Power and Temperature @ 10 GHz Output IP3 versus Single Output Power and Temperature @ 20 GHz 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Output IP3 (dBm) IP3 (7GHz & +25° C) IP3 (7GHz & +85° C) IP3 (7GHz & -40° C) 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Output IP3 (dBm) IP3 (10GHz & +25° C) IP3 (10GHz & +85° C) IP3 (10GHz & -40° C) 2 4 6 8 10 12 14 16 18 Single Output Power (dBm) Output IP3 (dBm) IP3 (20GHz & +25° C) IP3 (20GHz &+ 85° C) IP3 (20GHz & -40° C)

CHA3667aQDG 7-20GHz Amplifier Ref.:DSCHA3667aQDG7296 - 23 Oct 07 10/14 Specificat ions subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Typical Package Sij parameters Tamb = +25°C, Vd= 4.2V, Typical Id=175mA Refer to the “definition of the Sij reference planes” section below Definition of the Sij reference planes The reference planes are defined from the footprint of the recommended characterization board shown below under the number 96402. The reference is the symmetrical axis of the package. The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij incorporates this land pattern.

7-20GHz Amplifier CHA3667aQDG Ref: DSCHA3667aQDG7296 - 23 Oct 07 11/14 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Recommended footprint for 24L QFN4X4 SMD mounting procedure The SMD Leadess package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB ( motherboard) are given in the drawing above. For the mounting process standard techniques, involving solder paste and a suitable reflow process can be used. For further details, see appli cation note AN0017. 0.45 0.42 0.37 Taper 0.7 0.7 Via hole ø0.3 0.23 0.2 Q F N P IN Unit :mm

CHA3667aQDG 7-20GHz Amplifier Ref.:DSCHA3667aQDG7296 - 23 Oct 07 12/14 Specificat ions subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Proposed Assembly board “96270” for the 24L-QFN4x4 products characterization. - Compatible with the proposed footprint. - Based on typically Ro4003 / 8mils or equivalent. - Using a microstrip to coplanar transition to access the package. - Recommended for the implementation of this product on a module board. Gn d Condensator 10nF ±10% Gn d Vd Gnd Capacitor 10nF ±10% Vd Gnd

7-20GHz Amplifier CHA3667aQDG Ref: DSCHA3667aQDG7296 - 23 Oct 07 13/14 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Package outline:

CHA3667aQDG 7-20GHz Amplifier Ref.:DSCHA3667aQDG7296 - 23 Oct 07 14/14 Specificat ions subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Note Due to ESD protection circuits, RFin and RFout are DC grounded and an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses.

Ordering Information

QFN 4x4 RoHS compliant package: CHA3667aQDG/XY Stick: XY=20 Tape & reel: XY=21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Vd RFin RFout Vd RFin RFout