CHA3512_08 UMS | Alldatasheet
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Technical content
Ref. DSCHA3512-8144 - 23 May 08 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC
Description
The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Performances: 6-18GHz ■ 23dBm saturated output power ■ 16dB gain ■ 1 bit attenuator for 20dB dynamic range ■ DC power consumption: 210mA @ 4.5V ■ Chip size: 4.27 x 2.46 x 0.1mm 0dB state 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25° C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 16 dB Psat Saturated Output power @ Attenuator state 0dB 23 dBm ATT dyn Attenuator range 20 dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions !
CHA3512 6-18GHz Digital Variable Amplifier Ref. DSCHA3512-8144 - 23 May 08 2/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics on wafer Tamb = +25° C Vd = Pads B, D = 4.5V, Vg = Pads A, C tuned for Id = 210mA Symbol Parameter Min Typ Max Unit Fop Operating frequency range (1) 6 18 GHz G Small signal gain @ Attenuator state 0dB (1) 6-16GHz 16-18GHz dB ATT dyn Attenuator range 19 20 22 dB Is Isolation @ Attenuator state 0dB & switch OFF (1) -25 -35 dB P1dB Output power at 1dB compression @ Attenuator state 0dB (1) 20 dBm Psat Saturated Output power @ Attenuator state 0dB (1) 23 dBm NF Noise figure @ Attenuator state 0dB 7 dB RL_IN Input Return Loss all attenuator states (switch ON) -15 -8 dB RL_OUT Output Return Loss all attenuator states (switch ON and switch OFF) -20 -6 dB Vd Drain bias DC voltage ( Pads B, D) 4.5 V Id Bias current @ small signal 210 250 mA Vc Control voltage for Attenuator bit & SPDT switch -5 0 V (1) These values are representative for on-wafer measurements that are made without bonding wires at the RF ports.
6-18GHz Digital Variable Amplifier CHA3512 Ref. : DSCHA3512-8144 - 23 May 08 3/10 Specificatio ns subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Absolute Maximum Ratings Tamb. = 25° C (1) Symbol Parameter Values Unit Vd Maximum Drain bias voltage ( Pads B, D) +5 V Id Drain bias current with Vd=4.5V 300 mA Vg Gate bias voltage (Pads A,C) -2 to +0.4 V Vc Attenuator bit & SPDT control voltage -7 to +0. 6 V Pin Maximum input power overdrive (2) +20.0 dBm Tch Maximum channel temperature +175 ° C Ta Operating temperature range -40 to +70 ° C Tstg Storage temperature range -55 to +125 ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Thermal Resistance channel to ground paddle =123° C/W for Tamb. = +70° C. LNA Control interface The attenuator state is controlled by 2 voltages. The SPDT switch is controlled by 2 voltages. Voltage CONTROL PAD Switch control state Theoretical attenuation (dB) 20A (V) 20B (V) E (V) F (V) 0 0 référence -5 0 -5 0 1 20 0 -5 -5 0
2 Isolation -5 0 0 -5
CHA3512 6-18GHz Digital Variable Amplifier Ref. DSCHA3512-8144 - 23 May 08 4/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical on wafer Measurements @ 25° C Bias conditions: Vd = 4.5V, Vg tuned for Id = 210mA Linear Gain versus attenuator states Linear Gain with SPDT switch OFF 0dB state 20dB state
6-18GHz Digital Variable Amplifier CHA3512 Ref. : DSCHA3512-8144 - 23 May 08 5/10 Specificatio ns subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Saturated output power@nominal state Attenuator accuracy versus frequency dB(S11) versus frequency for all states dB(S22) versus frequency for all states Switch OFF
CHA3512 6-18GHz Digital Variable Amplifier Ref. DSCHA3512-8144 - 23 May 08 6/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical test fixture Measurements @ 25° C Bias conditions: Vd = 4.5V, Vg tuned for Id = 210mA 0dB state 20dB state Linear Gain versus attenuation states Input Return Loss versus attenuation states Switch OFF Switch OFF
6-18GHz Digital Variable Amplifier CHA3512 Ref. : DSCHA3512-8144 - 23 May 08 7/10 Specificatio ns subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Output Return Loss versus attenuation states
CHA3512 6-18GHz Digital Variable Amplifier Ref. DSCHA3512-8144 - 23 May 08 8/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Chip on wafer Sij parameters for reference state Tamb = +25° C, Vd = +4.5 V, Id = 210 mA , 0dB state (20A = -5V, 20B = 0V). Freq (GHz) dB(S11) P(S11) (° ) dB(S21) P(S21) (° ) dB(S12) P(S12) (° ) dB(S22) P(S22) (° )
6-18GHz Digital Variable Amplifier CHA3512 Ref. : DSCHA3512-8144 - 23 May 08 9/10 Specificatio ns subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Assembly and Mechanical Data Note: RF wire bondings should be as short as possible, lower than 0.35mm. 25µm diameter gold wire is to be prefered. Recommended circuit bonding table Label Type Decoupling Comment 20A, 20B Vc Not required 20dB attenuator control B Vd 120pF / 10nF Drain Supply D Vd 120pF / 10nF Drain Supply A Vg Not required Gate Supply C Vg Not required Gate Supply E, F Vc Not required Switch control To Vd DC Drain Supply RF IN1 RF IN2 RF OUT
CHA3512 6-18GHz Digital Variable Amplifier Ref. DSCHA3512-8144 - 23 May 08 10/10 Specification s subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Bonding pad positions
Ordering Information
Chip form : CHA3512-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Chip thickness: 100µm