CHA3023

CHA3023 UMS | Alldatasheet

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Technical content

DSCHA30235263 - 20 sep 05 1/8 Specifications subjec t to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC

Description

The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form. Main Features Broadband performances : 1-18 GHz ■ 14dB gain ■ 3dB typical Low Noise Figure ■ ±0.7 dB gain flatness ■ Die size : 2.15 X 1.42 X 0.10 mm Main Characteristics Tamb. = 25° C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 1 18 GHz G Small signal Gain 12.5 14 NF Noise figure 4 dB Id Bias current 95 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! On wafer measurements -20 -15 -10 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) Gain & RLoss dBS21 dBS11 dBS22

CHA3023 1-18GHz Wide Band Amplifier DSCHA30235263 - 20 sep 05 2/8 Specifications subjec t to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25° C, Vd=5V, Vg1=-0.3V tuned to have Id=95mA Vg2=+2V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 1 18 GHz G Small signal gain F= 1 to 3GHz F= 3 to 18GHz 11.5 12.5 dB dB ΔG Small signal gain flatness ± 0.7 dB P1dB Output power at 1dB gain compression 15 17 d Bm VSWRin Input VSWR 2.2:1 VSWRout Output VSWR 2.2:1 NF Noise Figure F= 1 to 4GHz F= 1 to 18GHz 2.5 dB dB Vdc DC voltage Vd Vg1 Vg2 -0.3 V V V Id Bias current 95 mA Absolute Maximum Ratings Tamb. = 25° C (1) Symbol Parameter Min. Max. Unit Vd Drain to ground bias voltage 0 6.5 V Id Drain current 110 mA Vg1 Gate to ground bias voltage -1.5 0.3 V Vg2 Gate to ground bias voltage 0 3 V Pin Maximun peak input power overdrive (2) +15 dBm Pin Maximum input CW power +10 dBm Top Operating temperature -40 85 ° C Tstg Storage temperature range -55 125 ° C (1) Operation of this device above anyone of these parameters may cause permanent damage (2) Duration < 1s

CHA3023 1-18 GHz Wide Band Amplifier DSCHA30235263 - 20 sep 05 3/8 Specifications subjec t to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25° C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA Freq GHz MS11 dB PS11 MS12 dB PS12 MS21 dB PS21 MS22 dB PS22 1,00 -11,84 -86,69 -68,86 12,95 12,27 175,21 -11,75 175,50 1,50 -14,88 -96,63 -59,00 -65,50 13,11 164,60 -13,1 3 134,72 2,00 -16,59 -102,61 -57,76 -85,24 13,74 152,90 -14, 05 103,57 2,50 -17,55 -106,89 -55,88 -101,83 14,21 140,45 -14 ,93 77,53 3,00 -17,90 -110,67 -56,09 -133,36 14,38 127,54 -16 ,15 60,98 3,50 -18,04 -114,80 -54,51 -146,60 14,42 116,64 -15 ,59 48,79 4,00 -17,90 -119,10 -53,45 -166,51 14,50 105,01 -15 ,88 36,69 4,50 -17,64 -124,04 -52,07 178,88 14,55 93,81 -15,8 6 24,61 5,00 -17,43 -129,21 -52,57 165,06 14,56 82,83 -15,7 3 15,78 5,50 -17,36 -134,92 -50,96 155,03 14,57 71,87 -15,6 2 6,63 6,00 -17,32 -140,65 -49,52 145,22 14,57 61,00 -15,4 5 -1,24 6,50 -17,35 -146,35 -48,93 131,37 14,59 50,26 -15,3 2 -9,98 7,00 -17,55 -152,20 -48,40 115,97 14,58 39,44 -15,1 8 -16,89 7,50 -17,83 -157,72 -47,52 106,26 14,57 28,65 -15,1 5 -23,44 8,00 -18,45 -162,53 -46,94 95,20 14,56 17,95 -14,94 -30,10 8,50 -19,80 -164,62 -46,12 84,24 14,54 7,35 -14,56 -35,12 9,50 -21,89 -169,76 -44,84 62,64 14,55 -14,27 -14,6 7 -46,03 10,00 -23,72 -166,34 -44,04 53,09 14,53 -25,14 -14, 80 -51,30 10,50 -25,53 -158,58 -43,80 39,38 14,50 -36,02 -14, 99 -53,99 11,00 -26,70 -141,85 -43,12 26,47 14,48 -46,99 -15, 32 -57,64 11,50 -25,89 -122,93 -42,27 14,98 14,44 -57,87 -15, 48 -58,42 12,00 -24,09 -110,31 -41,97 2,10 14,40 -68,96 -15,8 7 -59,30 16,00 -13,93 -128,81 -39,29 -102,25 13,97 -157,55 - 11,44 -69,64 16,50 -13,43 -132,05 -38,83 -118,12 13,93 -168,97 - 11,06 -77,10 17,00 -13,18 -134,80 -38,87 -127,14 13,92 179,41 -1 1,02 -85,48 17,50 -12,67 -137,46 -38,86 -144,06 13,92 167,15 -1 1,28 -95,81 18,00 -11,85 -137,37 -37,71 -156,10 13,91 154,49 -1 2,47 -109,17 18,50 -11,23 -139,77 -37,48 -170,79 13,84 140,84 -1 6,01 -125,94 19,00 -10,46 -143,04 -37,24 175,70 13,57 125,81 -32 ,15 -109,28 19,50 -9,39 -147,86 -36,76 157,84 12,86 111,51 -16, 15 -15,25 20,00 -8,65 -153,32 -36,48 142,87 12,02 99,83 -11,2 5 -34,96

CHA3023 1-18GHz Wide Band Amplifier DSCHA30235263 - 20 sep 05 4/8 Specifications subjec t to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Typical Response (On wafer measurements) : Tamb = +25° C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA Typical on wafer S parameters Typical on wafer Noise Figure Pout vs Frequency (Pin=4dBm)

CHA3023 1-18 GHz Wide Band Amplifier DSCHA30235263 - 20 sep 05 5/8 Specifications subjec t to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Typical Response (Test Jig measurements) : Tamb = +25° C Vd = 5.0V ; Vg2 = 2V and Vg1 tuned to Id = 95mA Power compression @ 1GHz Power compression @ 12GHz Power compression @ 18GHz

CHA3023 1-18GHz Wide Band Amplifier DSCHA30235263 - 20 sep 05 6/8 Specifications subjec t to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 P1dB vs Frequency Noise Figure vs Frequency Gain & Return Loss vs Frequency

CHA3023 1-18 GHz Wide Band Amplifier DSCHA30235263 - 20 sep 05 7/8 Specifications subjec t to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Assembly and Mechanical Data Special care should be taken concerning the biasing procedure. Apply Vg before Vd. The CHA3023 could be used without Vg2 bias. There is a resistor bridge inside the chip. This one generates the correct value of Vg2 Bias. Pads G2a and G2 must be connected. Equivalent RF Wire Bondings: 0.15 nH (typical length of 200µm for a 25µm diameter wire). Equivalent wire bo nding : 0.15 nH Equivalent wire bo n ding : 0.15 nH Equivalent wire bo nding : 0.15 nH Equivalent wire bo nding : 0.15 nH

CHA3023 1-18GHz Wide Band Amplifier DSCHA30235263 - 20 sep 05 8/8 Specifications subjec t to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Bonding pad positions Chip Thickness: 100um Chipsize: 2150X1420 ±35 µm

Ordering Information

Die form : CHA3023-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.