CEM9926 VBSEMI | Alldatasheet

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  • Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET  100 % R g Tested  Compliant to RoHS Directive 2002/9 5/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 Top View N-Channel MOSFET N-Channel MOSFET Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe rwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID 7.1 A TA = 70 °C 5.7 Pulsed Drain Current (10 µs Pulse Width) IDM 40 Continuous Source Current (Diode Conduction)a IS 1.7 Maximum Power Di ssipationa TA = 25 °C PD WTA = 70 °C 1.3 Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 62.5 °C/W Dual N-Channel 20-V (D-S) MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CEM9926 A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Abso lute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise note d Parameter Symbol Test Condit ions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) V DS ≥ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 7.1 A 0.019 0.025 ΩVGS = 2.5 V, ID = 6.0 A 0.026 0.035 Forward Transconductancea gfs VDS = 10 V, ID = 7.1 A 27 S Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 7.1 A 9.5 nCGate-Source Charge Qgs 1.5 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1 MHz 1.6 2.7 Ω Tur n-On De lay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 10 Ω ns Rise Time tr 15 Turn-Off Delay Time td(off) 38 Fall Time tf 25 Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 26 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CEM9926 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 5 V thru 3 V 2 V 1 V, 1.5 V 2.5 V 0.00 0.02 0.04 0.06 0.08 0.10 0 102 03 04 0 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 10 V ID = 7.1 A Transfer Characteristics Capacitance On-Resistance vs. Junction T emperature VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 125 °C - 55 °C 25 °C 200 400 600 800 1000 048 1 2 1 6 2 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Coss Ciss RDS (on) - On-Resistance (Normalized) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 7.1 A TJ - Junction Temperature (°C) 2 4 6 8 10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CEM9926 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Source-Drain Diode Forward Voltage T hreshold Voltage VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = 150 °C TJ = 25 °C TJ - Temperature (°C) - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) On-Resistance vs. Gate-to-Source Voltage Single Pulse Po wer - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 012345 ID = 7.1 A 0.01 0.10 1.00 10.00 Time (s) Power (W) Normalized Thermal Transient Impedance, Jun ction-to-Ambient Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 11 0 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CEM9926 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4 .80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CEM9926 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CEM9926 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw CEM9926 A ll data sheet.com