C3025 IMP | Alldatasheet
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Technical content
93© IMP, Inc. Process C3025 CMOS 3µ m
10 Volt Analog
N-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VT N 0.65 0.85 1.05 V 100x4 µm Body Factor γN 0.87 V 1/2 100x4µm Conduction Factor βN 40 48 56 µA/V2 100x100µm Effective Channel Length LeffN 3.05 3.40 3.75 µm 100x4 µm Width Encroachment ΔW N 0.550 µm Per side Punch Through Voltage BVDSS N 16.5 V Poly Field Threshold VoltageVTF P(N) 12 V P-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VT P –0.7 –0.9 –1.1 V 100x4 µm Body Factor γP 0.75 V 1/2 100x4µm Conduction Factor βP 13 16 19 µA/V2 100x100µm Effective Channel Length LeffP 3.00 3.35 3.70 µm 100x4 µm Width Encroachment ΔW P 0.8 µm Per side Punch Through Voltage BVDSS P –16.5 V Poly Field Threshold VoltageVTF P(P) –12 V Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Well (field) Sheet ResistanceρP-well(f) 3.25 5.25 7.25 K Ω /o P-well N+ Sheet Resistance ρN+ 13 20 27 Ω /o N+ Junction Depth x jN+ 0.8 µm P+ Sheet Resistance ρP+ 50 80 100 Ω /o P+ Junction Depth x jP+ 0.7 µm Gate Oxide Thickness T GOX 45 48 51 nm Interpoly Oxide Thickness TP1P2 56 66 76 nm Gate Poly Sheet ResistanceρPOLY1 15 22 30 Ω /o Bottom Poly Sheet Res. ρPOLY2 15 22 30 Ω /o Metal-1 Sheet Resistance ρM1 50 m Ω /o Passivation Thickness T PASS 200+900 nm oxide+nit. Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide C OX 0.68 0.72 0.78 fF/ µm 2 Metal-1 to Poly-1 C M1P 0.047 0.0523 0.0575 fF/ µm 2 Metal-1 to Silicon C M1S 0.027 0.30 0.034 fF/ µm 2 Poly-1 to Poly-2 C P1P2 0.453 0.523 0.617 fF/ µm 2
Electrical Characteristics
T=25oC Unless otherwise noted ISO 9001 Registered
94 C3025-4-98
Starting Material P <100> N+/P+ Width/Space 3.0 / 3.0 µm Starting Mat. Resistivity 15 - 25 Ω -cm N+ To P+ Space 12 µm Typ. Operating Voltage 10V Contact To Poly Space 2.5 µm Well Type P-well Contact Overlap Of Active 1.5 µm Metal Layers 1 Contact Overlap Of Poly 1.0 µm Poly Layers 2 Metal-1 Overlap Of Contact 1.0 µm Contact Size 2.0x2.0 µm Minimum Pad Opening 100x100 µm Metal-1 Width/Space 3.5 / 2.5µm Minimum Pad-to-Pad Spacing 5.0 µm Gate Poly Width/Space 3.0 / 3µm Minimum Pad Pitch 80.0 µm Special Feature of C3025 Process: 10 Volt P-well single metal analog process. Physical Characteristics