2SC1507_15 JMNIC | Alldatasheet

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Technical content

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507

DESCRIPTION

  • With TO-220 package
  • High collector-emitter voltage : VCEO=300V
  • High frequency:fT=40MHz(Min)

APPLICATIONS

  • For color TV chroma output applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.2 A PC Collector power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic

Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors 2SC1507 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCBO(BR) Collector-base breakdown voltage I C=10μA ;IE=0 300 V VCEO(BR) Collector-emitter breakdown voltage I C=10mA ;IB=0 300 V VEBO(BR) Emitter-base breakdown voltage I E=10μA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=50mA ;IB=5mA 2.0 V ICBO Collector cut-off current V CB=200V;IE=0 100 μA IEBO Emitter cut-off current V EB=7V; IC=0 100 μA hFE DC current gain I C=10mA ; VCE=10V 40 240 COB Output capacitance I E=0; VCB=50V;f=1MHz 4 pF fT Transition frequency I C=10mA ; VCE=30V 40 80 MHz ‹ hFE-1 classifications R O Y 40-80 70-140 120-240

Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors 2SC1507 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)