C106D SYC | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
- Glassivated Surface for Reliability and Uniformity
- Power Rated at Economical Prices
- Practical Level Triggering and Holding Characteristics
- Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
- Sensitive Gate Triggering
- Pb−Free Packages are Available* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−225AA CASE 077 STYLE 2 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
4 A RMS, 200 − 600 Volts
http://onsemi.com K G A MARKING DIAGRAM & PIN ASSIGNMENT Y = Year WW = Work Week C106xx = Device Code xx = B, D, D1, M, M1 G = Pb −Free Package YWW C106xxG 1. Cathode 2. Anode 3. Gate
http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Characteristic Symbol Max Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50−60 Hz, RGK = 1 k/C0087, TC = −40° to 110°C) C106B C106D, C106D1* C106M, C106M1* VDRM, VRRM 200 400 600 V On-State RMS Current (180° Conduction Angles, TC = 80°C) IT(RMS) 4.0 A Average On−State Current (180° Conduction Angles, TC = 80°C) IT(AV) 2.55 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C) ITSM 20 A Circuit Fusing Considerations (t = 8.3 ms) I2t 1.65 A2s Forward Peak Gate Power (Pulse Width /C01181.0 /C0109sec, TC = 80°C) PGM 0.5 W Forward Average Gate Power (Pulse Width /C01181.0 /C0109sec, TC = 80°C) PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width /C01181.0 /C0109sec, TC = 80°C) IGM 0.2 A Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C Mounting Torque (Note 2) − 6.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciabl y lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R/C0113JC 3.0 °C/W Thermal Resistance, Junction−to−Ambient R/C0113JA 75 °C/W Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds TL 260 °C Device Package Shipping† C106B TO−225AA 500 Units / Box C106BG TO−225AA (Pb−Free)
500 Units / Box
C106D TO−225AA 500 Units / Box C106DG TO−225AA (Pb−Free) C106D1* TO−225AA 500 Units / Box C106D1G* TO−225AA (Pb−Free) C106M TO−225AA 500 Units / Box C106MG TO−225AA (Pb−Free) C106M1* TO−225AA 500 Units / Box C106M1G* TO−225AA (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
http://onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1 k/C0087)T J = 25°C TJ = 110°C IDRM, IRRM 100 /C0109A /C0109A ON CHARACTERISTICS Peak Forward On−State Voltage (Note 3) (ITM = 4 A) VTM − − 2.2 V Gate Trigger Current (Continuous dc) (Note 4) (VAK = 6 Vdc, RL = 100 /C0087)T J = 25°C TJ = −40°C IGT 200 500 /C0109A Peak Reverse Gate Voltage (IGR = 10 /C0109A) VGRM − − 6.0 V Gate Trigger Voltage (Continuous dc) (Note 4) (VAK = 6 Vdc, RL = 100 /C0087)T J = 25°C TJ = −40°C VGT 0.4 0.5 0.60 0.75 0.8 1.0 V Gate Non−Trigger Voltage (Continuous dc) (Note 4) (VAK = 12 V, RL = 100 /C0087, TJ = 110°C) VGD 0.2 − − V Latching Current (VAK = 12 V, IG = 20 mA, RGK = 1 k/C0087)T J = 25°C TJ = −40°C IL 0.20 0.35 5.0 7.0 mA Holding Current (VD = 12 Vdc) (Initiating Current = 20 mA, RGK = 1 k/C0087)T J = 25°C TJ = −40°C TJ = +110°C IH 0.19 0.33 0.07 3.0 6.0 2.0 mA DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off−State Voltage (VAK = Rated VDRM, Exponential Waveform, RGK = 1 k/C0087, TJ = 110°C) dv/dt − 8.0 − V//C0109s 3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 4. R GK is not included in measurement. + Current + Voltage VTM IDRM at VDRM IH Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region IRRM at VRRM (off state)
http://onsemi.com The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility. ON Semiconductor C-106 Package Competitive C-106 Package .315____ .285 .105____ .095 .054____ .046 .420____ .400 .400____ .360 .385____ .365 .135____ .115 .520____ .480 .127____ .123 DIA .105____ .095 .190____ .170 .026____ .019 .025____ .035 .295____ .305 .148____ .158 .115____ .130 /C0095 .015____ .025 .050____ .095 .145____ .155 5 TYP.425____ .435 .575____ .655 .020____ .026 123 .045____ .055 .095____ .105 .040 .094 BSC PACKAGE INTERCHANGEABILITY
http://onsemi.com PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE −B− −A− M K F C Q H V G S D J R U 13 2 2 PL MAM0.25 (0.010) B M MAM0.25 (0.010) B M DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 /C0095/C0095 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 C106/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative