C0810 IMP | Alldatasheet
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Technical content
15© IMP, Inc. ISO 9001 Registered Process C0810 CMOS 0.8µ m High-Resistance Poly for Analog
Electrical Characteristics
T=25oC Unless otherwise noted N-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VT N 0.6 0.8 1.0 V 100x0.8 µm Body Factor γN 0.74 V 1/2 100x0.8µm Conduction Factor βN 75 94 115 µA/V2 100x100µm Effective Channel Length LeffN 0.8 µm 100x0.8 µm Width Encroachment ΔW N 0.3 µm Per side Punch Through Voltage BVDSS N 71 3 V Poly Field Threshold VTF P(N) 10 17 V P-Channel Transistor Symbol Minimum Typical Maximum Unit Comments Threshold Voltage VT P –0.7 –0.9 –1.1 V 100x0.8 µm Body Factor γP 0.57 V 1/2 100x0.8µm Conduction Factor βP 25 31 37 µA/V2 100x100µm Effective Channel Length LeffP 0.85 µm 100x0.8 µm Width Encroachment ΔW P 0.4 µm Per side Punch Through Voltage BVDSS P –7 –12 V Poly Field Threshold VoltageVTF P(P) –10 –17 V Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Well (field) Sheet ResistanceρN-well(f) 0.50 0.65 0.80 K Ω /o n-well N+ Sheet Resistance ρN+ 45 60 75 Ω /o N+ Junction Depth x jN+ 0.25 µm P+ Sheet Resistance ρP+ 68 90 112 Ω /o P+ Junction Depth x jP+ 0.4 µm Gate Oxide Thickness T GOX 17.5 nm Field Oxide Thickness T FIELD 700 nm Bottom Poly Sheet Res. ρPOL Y1 15 23 32 Ω /o Gate Poly Sheet ResistanceρPOL Y2 15 23 32 Ω /o Metal-1 Sheet Resistance ρM1 40 60 80 m Ω /o Metal-2 Sheet Resistance ρM2 20 30 40 m Ω /o Passivation Thickness T PASS 200+900 nm oxide+nit. High Resistance Poly ρHI-POL Y 1.5 2.0 2.5 K Ω /o Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide C OX 1.97 fF/ µm 2 Metal-1 to Poly1 C M1P 0.046 fF/ µm 2 Metal-1 to Silicon C M1S 0.028 fF/ µm 2 Metal-2 to Metal-1 C MM 0.038 fF/ µm 2 Poly-1 to Poly-2 C PP 0.69 0.822 1.015 fF/ µm 2
16 C0810-4-98
Starting Material P <100> N+/P+ Width/Space 1.4 / 1.6 µm Starting Mat. Resistivity 25 - 50 Ω -cm N+ To P+ Space 5.9 µm Typ. Operating Voltage 5V Contact To Poly Space 0.8 µm Well Type N-well Contact Overlap Of Diffusion 0.7 µm Metal Layers 2 Contact Overlap Of Poly 0.7 µm Poly Layers 2 Metal-1 Overlap Of Contact 0.7 µm Contact Size 0.8x0.8 µm Metal-1 Overlap Of Via 0.7 µm Via Size 0.8x0.8 µm Metal-2 Overlap Of Via 0.7 µm Metal-1 Width/Space 1.4 / 1.0µm Minimum Pad Opening 65x65 µm Metal-2 Width/Space 1.4 / 1.1µm Minimum Pad-to-Pad Spacing 5.0 µm Gate Poly Width/Space 0.8 / 1.0µm Minimum Pad Pitch 80.0 µm Collector Voltage, VCE , Volt. C0810 Vertical pnp Transistor Characteristics IC V/S VC, 60 x 7.2 µm Collector Current, IC , µA -400.0 0- 1- 2- 3- 4- 5 IB = -12.5 µA IB = -10.0 µA IB = -7.5 µA IB = -5.0 µA IB = -2.5 µA Base Voltage, VBE , Millivolts. C0810 Vertical pnp Transistor Characteristics IC /IB, pnp 60 x 7.2 µm Collector/Base IC /IB Current, Amps -10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 -400 -500 -600 -700 -800 IC IB -900 40.00 Drain Voltage, VDS , Volts. C0810 - n - Channel Transistor Characteristics ID V/S VD, W/L = 100 x 0.8 µm Drain Current, IDS , mA 012 345 VGS =5V VGS =4V VGS =3V VGS =2V VGS =1V -20.0 -10.0 Drain Voltage, VDS , Volts. C0810 - P - Channel Transistor Characteristics ID V/S VD, W/L = 100 x 0.8 µm Drain Current, IDS , mA 0- 1- 2- 3- 4- 5 VGS = -5V VGS = -4V VGS = -3V VGS = -2V VGS = -1V