BTA06

BTB06 SUNTAC | Alldatasheet

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® s S 6A TRIACS A MAIN FEATURES:

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Suitable for AC switching operations, the BTA/ BTB06 series can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,... The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards . Symbol Value Unit IT(RMS) 6A VDRM/VRRM 600 and 800 V IG (Q1) 5 to 50 mA ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-220AB Tc = 110°C A TO-220AB Ins. Tc = 105°C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 60 A F = 60 Hz t = 16.7 ms 63 I²tI ²t Value for fusing tp = 10 ms 21 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C G G GA2 TO-220AB (BTB06) TO-220AB Insulated (BTA06) BTA/BTB06 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) ■ STANDARD (4 Quadrants) STATIC CHARACTERISTICS Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Symbol Test Conditions Quadrant BTA/BTB06 Unit TW SW CW BW IGT (1) VD = 12 V RL = 30 Ω I - II - III MAX. 5 10 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 100 mA M A X . 1 01 53 55 0m A IL IG = 1.2 IGT I - III MAX. 10 25 50 70 mA II 15 30 60 80 dV/dt (2) V D = 67 %VDRM gate open Tj = 125°C MIN. 20 40 400 1000 V/µs (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 2.7 3.5 - - A/ms (dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4 - - Without snubber Tj = 125°C - - 3.5 5.3 Symbol Test Conditions Quadrant BTA/BTB06 Unit CB IG (1) VD = 12 V RL = 30 Ω I - II - III IV MAX. 25 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 25 50 mA IL IG = 1.2 IGT I - III - IV MAX. 40 50 mA II 80 100 dV/dt (2) V D = 67 %VDRM gate open Tj = 125°C MIN. 200 400 V/µs (dV/dt)c (2) (dI/dt)c = 2.7 A/ms Tj = 125°C MIN. 5 10 V/µs Symbol Test Conditions Value Unit VT (2) I TM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 60 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 1 mA

Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: On-state characteristics (maximum values). Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 01234560 P (W) IT(RMS)(A) 0 25 50 75 100 1250 IT(RMS) (A) BTA BTB Tc(°C) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21E-2 1E-1 1E+0 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) 100 ITM (A) Tj=Tj maxTj max. Vto = 0.85 V Rd = 60 mΩ VTM(V) 1 10 100 10000 ITSM (A) Non repetitive Tj initial=25°C Repetitive Tc=105°C One cycle t=20ms Number of cycles 0.01 0.10 1.00 10.0010 100 1000 tp (ms) ITSM (A), I²t (A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 50A/µs

Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard Types Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] IGT IH & IL Tj(°C) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c BW/CW SW TW (dV/dt)c (V/µs) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c C B (dV/dt)c (V/µs) 0 25 50 75 100 1250 (dI/dt)c [Tj] / (dI/dt)c [Tj specified] Tj(°C)