BT236-D SEMIWELL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 6 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ Non-isolated Type General Description This device is sensitive gate tr iac suitable for direct coupling to TTL, HTL, CMOS and applic ation such as various logic functions, AC switching applic ations, phase control applica- tion such as fan speed, light controllers and home appliance equipment. 2.T2 3.Gate 1.T1 Symbol TO-220 Sensitive Gate Triacs BT236-D SemiWell Semiconductor Preliminary

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 1.0 mA VTM Peak On-State Voltage IT = 8 A, Inst. Measurement ─ ─ 1.6 V GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 5 mA I - GT1 Ⅱ ── 5 I - GT3 Ⅲ ── 5 GT3 Ⅳ ─ 81 2 GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.4 V GT1 Ⅱ ── 1.4 GT3 Ⅲ ── 1.4 GT3 Ⅳ ─ 1.6 2.0 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 5 ── V/㎲ IH Holding Current ── 10 mA Rth(j-c) Thermal Impedance Junction to case ── 2.8 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 60 °C/W BT236-D ※ Notes : 1. Pulse Width ≤ 300us , Duty cycle ≤ 2%

Surge On-State Current [A] Time (cycles) 012345678 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 25 o C TJ = 125 o C On-State Current [A] On-State Voltage [V] VGD(0.2V) 25 ℃ I+GT3 IGM (2A) 25 ℃ I+GT1 I -GT1 I -GT3 PG(AV) (0.3W) PGM (3W) VGM (10V) Gate Voltage [V] Gate Current [mA] -50 0 50 100 150 V GT3 X 100 (%) VGT (t o V GT1 V GT1 V GT3 VGT (25 o Junction Temperature [ o 01234567 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] BT236-D Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle

-50 0 50 100 150 I GT3 I GT1 I GT1 I GT3 X 100 (%) IGT (t o IGT (25 o Junction Temperature [ o Transient Thermal Impedance [ o C/W] Time (sec) BT236-D Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature Fig 9. Gate Trigger Characteristics Test Circuit A V 10Ω RG A V 10Ω RG A V 10Ω RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ A V 10Ω RG Test Procedure Ⅳ

Dim. mm Inch A 9.7 10.1 0.382 0.398 B 6.3 6.7 0.248 0.264 C 9.0 9.47 0.354 0.373 D 12.8 13.3 0.504 0.524 E 1.2 1.4 0.047 0.055 F 1.7 0.067 G 2.5 0.098 H 3.0 3.4 0.118 0.134 I 1.25 1.4 0.049 0.055 J 2.4 2.7 0.094 0.106 K 5.0 5.15 0.197 0.203 L 2.2 2.6 0.087 0.102 M 1.25 1.55 0.049 0.061 N 0.45 0.6 0.018 0.024 O 0.6 1.0 0.024 0.039 φ 3.6 0.142 BT236-D 1. T1 2. T2 3. Gate A B C I G L M E F φH K N O J D