BT151F-600 SEMIWELL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Isolation Voltage ( VISO = 1500V AC ) General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor con- trol circuit in power tool, inrush current limit circuit and heating control system. 3. Gate 1. Cathode Symbol SemiWell Semiconductor Silicon Controlled Rectifiers TO-220F 1 2 3 2. Anode Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. Preliminary

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM TC = 25 °C TC = 125 °C 200 VTM Peak On-State Voltage (1) ITM = 23 A tp=380㎲ ─ ─ 1.7 V IGT Gate Trigger Current (2) VAK = 6 V(DC), RL=10 Ω TC = 25 °C ── 15 mA VGT Gate Trigger Voltage (2) VD = 6 V(DC), RL=10 Ω TC = 25 °C ── 1.5 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C 200 ─ ─ V/㎲ IH Holding Current IT = 100mA, Gate Open TC = 25 °C ── 20 mA Rth(j-c) Thermal Impedance Junction to case ── 3.8 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 60 °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement. BT151F-600

Transient Thermal Impedance [ o C/W] Time (sec) 125 o C o C On-State Current [A] On-State Voltage [V] -50 0 50 100 150 0.1 IGT(t o IGT(25 o Junction Temperature[ o 0123456789 100 120 140 θ = 180 o Max. Allowable Case Temperature [ o Average On-State Current [A] IGM(2A) VGD(0.2V) PG(AV)(0.5W) PGM(5W) VGM(5V) o C Gate Voltage [V] Gate Current [mA] Fig 2. Maximum Case T emperature θ : Conduction Angle 360° θ 2ππ Fig 3. Typical Forward Voltage Fig 4. Thermal Response Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature Fig 6. Typical Gate Trigger Current vs. Junction Temperature BT151F-600 Fig 1. Gate Characteristics -50 0 50 100 150 0.1 VGT(t o VGT(25 o Junction Temperature[ o

θ = 30 o θ = 60 o θ = 90 o θ = 120 o θ = 180 o Max. Average Power Dissipation [W] Average On-State Current [A] -50 0 50 100 150 0.1 IH(t o IH(25 o Junction Temperature[ o Fig 7. Typical Holding Current Fig 8. Power Dissipation BT151F-600

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 13.47 13.73 0.530 0.540 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 . 5 4 0 . 1 0 0 K5 . 0 8 0 . 2 0 0 L 2.51 2.62 0.099 0.103 M 1.25 1.55 0.049 0.061 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.024 0.039 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 BT151F-600 1. Cathode 2. Anode 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ