BT134F SEMIWELL | Alldatasheet

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Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt General Description This device is suitable for low power AC switching applica- tion, phase control application such as fan speed and tem- perature modulation control, lighting control and static switching relay. 2.T2 3.Gate 1.T1 Symbol SemiWell Semiconductor Bi-Directional Triode Thyristor copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. TO-126 3 2 1 Preliminary

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 0.5 mA VTM Peak On-State Voltage IT = 5 A, Inst. Measurement ── 1.7 V GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 25 mA I - GT1 Ⅱ ── 25 I - GT3 Ⅲ ── 25 GT3 Ⅳ ── 70 GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.5 V GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 GT3 Ⅳ ── 2.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM 5.0 ── V/㎲ IH Holding Current ─ 5 ─ mA Rth(j-c) Thermal Impedance Junction to case ── 3.5 °C/W BT134-F

-50 0 50 100 150 0.1 VGT (t o VGT (25 o Junction Temperature [ o 60Hz 50Hz Surge On-State Current [A] Time (cycles) 012345 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 012345 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] 125 o C o C On-State Current [A] On-State Voltage [V] 25℃ PG(AV) = 0.5W PGK = 5W IGM=2A VGK = 5V VGD = 0.2V Gate Voltage [V] Gate Current [mA] BT134-F Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle

Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature Fig 9. Gate Trigger Characteristics Test Circuit -50 0 50 100 150 0.1 I GT3 I GT1 I GT1 I GT3 IGT (t o IGT (25 o Junction Temperature [ o Transient Thermal Impedance [ o C/W] Time (sec) A V 10Ω RG A V 10Ω RG A V 10Ω RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ A V 10Ω RG Test Procedure Ⅳ

Dim. mm Inch A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 0.047 0.059 H 2.3 0.091 I 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 φ 3.2 0.126 BT134-F 1. Gate 2. T2 3. T1 A B C D E F G H I J K L φ

Dim. mm Inch A 7.5 7.9 0.295 0.311 B 10.8 11.2 0.425 0.441 C 14.2 14.7 0.559 0.579 D 2.7 2.9 0.106 0.114 E 3.8 0.150 F 2.5 0.098 G 1.2 1.5 0.047 0.059 H 2.3 0.091 I 4.6 0.181 J 0.48 0.62 0.019 0.024 K 0.7 0.86 0.028 0.034 L 1.4 0.055 M 5.0 0.197 φ 3.2 0.126 BT134-F 1. Gate 2. T2 3. T1 A B C D E F G H I J K Lφ M