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Technical content

◎ SEMIHOW REV.A1,March 2013 BT134- 600 G

FEATURES

 Repetitive Peak Off-State Voltage : 600V  R.M.S On–State Current (IT(RMS) = 4A)  Sensitive Gate Trigger Current - 5[mA] of IGT at I, II and III Quadrants. - 12[mA] of IGT at IV Quadrant.

Applications

Heating control, Lighting control, Motor control such like dimmer, sensor light, Humidifier, etc. General Description Semihow’s sensitive TRIAC product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage. It is generally suitable for power and phase control in ac application. BT134-600

4 Quadrants Sensitive TRIAC

VDRM = 600 V IT(RMS) = 4 A ITSM = 33 A IGT = 5mA/12mA TO-126 Symbol Absolute Maximum Ratings (TJ=25℃ unless otherwise specified ) Symbol Parameter Conditions Ratings Unit VDRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 600 V VRRM Repetitive Peak Reverse Voltage 600 V IT(AV) Average On-State Current Full sine wave, TC = 109.5oC 3.6 A IT(RMS) R.M.S. On-State Current 4 A ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 30/33 A I2t Fusing Current t = 10ms 4.5 A2S PGM Forward Peak Gate Power Dissipation TJ = 125 °C 2 W PG(AV) Forward Average Gate Power Dissipation TJ = 125 °C, over any 20ms 0.2 W IFGM Forward Peak Gate Current TJ = 125 °C, pulse width ≤ 20us 1 A VRGM Reverse Peak Gate Voltage TJ = 125 °C, pulse width ≤ 20us 6 V TJ Operating Junction Temperature -40~+125 oC TSTG Storage Temperature -40~+150 oC

◎ SEMIHOW REV.A1,March 2013 BT134- 600 Thermal Characteristics Electrical Characteristics (TJ=25℃ unless otherwise specified ) Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Symbol Parameter Conditions Min Typ Max Unit IDRM Repetitive Peak Off-State Current VD = VDRM TJ=25oC - - 50 uA TJ=125oC - - 5 mA IRRM Repetitive Peak Reverse Current VD = VDRM TJ=25oC - - 50 uA TJ=125oC - - 5 mA IGT Gate Trigger Current VD = 12V, RL=330Ω 3+ - - 12 mA VGT Gate Trigger Voltage VD = 12V, RL=330Ω 3+ - - 2.0 V VGD Non-Trigger Gate Voltage1 VD = 12V, RL=330Ω, TJ=125oC 0.2 - - V VTM Peak On-State Voltage IT = 5.6A, IG = 20mA - - 1.6 V dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC 10 - - V/us IH Holding current IT= 0.2A - 5 - mA Symbol Parameter Conditions Min Typ Max Unit RθJC Thermal Resistance Junction to Case 3.6 oC/W RθJA Thermal Resistance Junction to Ambient 80 oC/W

◎ SEMIHOW REV.A1,March 2013 BT134- 600 0 1 2 3 4 5 180 o 150 o 120 o o o o Power dissipation, PD [W] R.M.S. on state current, IT(RMS) [A] 0 1 2 3 4 5 100 105 110 115 120 125 130 180 o 150 o 120 o o o o Maximum allowable case temperature, TC [ o R.M.S. on state current, IT(RMS) [A] 25[ o I GT3 25[ o I GT1 I GT1 I GT3 PG(AV)(0.2W) PGM(2W) VGD Gate voltage, VG [V] Gate current, IG [mA] 50Hz Surge on state current, ITSM [A] Time[cycles] 60Hz -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 I GT3 Junction Temperature, TJ[ o X 100(%) IGT(t o IGT(25 o C) I GT1 I GT1 I GT3 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 V GT1 V GT1 V GT3 V GT3 Junction temperature, TJ[ o X 100(%)VGT(t o VGT(25 o Typical Characteristics Fig 3. Gate power characteristics Fig 4. Surge on state current rating (Non-repetitive) Fig 5. Gate trigger current vs. junction temperature Fig 6. Gate trigger voltage vs. junction temperature

◎ SEMIHOW REV.A1,March 2013 BT134- 600 0 1 2 3 4 5 125 o C o C Instantaneous on state current, IT [A] Instantaneous on state voltage, VT [V] Thermal impedance [ o C/W] Pulse Time [sec] Typical Characteristics Fig 7. Instantaneous on state current vs. Instantaneous on state voltage Fig 8. Thermal Impedance vs. pulse time RG RL VDD VG (1) Quadrant I RG RL VDD VG (2) Quadrant II RG RL VDD VG (3) Quadrant III RG RL VDD VG (4) Quadrant IV Measurement of gate trigger current Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. RS=0.078Ω VTO=0.85V

◎ SEMIHOW REV.A1,March 2013 BT134- 600 TO-126 Dimensions in Millimeters Package Dimension

◎ SEMIHOW REV.A1,March 2013 BT134- 600 TO-126 (Forming) Dimensions in Millimeters Package Dimension