BSS138 NCEPOWER | Alldatasheet

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Wuxi NCE Power Semiconductor Co., Ltd Page v 1 . 0 1 BSS138 Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES

  • V DS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=4.5V RDS(ON) < 2Ω @ VGS=10V
  • Lead free product is acquired
  • Surface Mount Package Application
  • Direct Logic-Level Interface: TTL/CMOS
  • Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
  • Battery Operated Systems
  • Solid-State Relays Schematic diagram Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

138 BSS138 SOT-23 Ø180mm 8 mm 3000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.22 A Drain Current-Pulsed (Note 1) IDM 0.88 A Maximum Power Dissipation PD 0.35 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS V GS=0V ID=250μA 50 V Zero Gate Voltage Drain Current IDSS V DS=50V,VGS=0V 0.5 μA

Wuxi NCE Power Semiconductor Co., Ltd Page v 1 . 0 2 BSS138 Pb Free Product http://www.ncepower.com Gate-Body Leakage Current IGSS V GS=±20V,VDS=0V ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 0.8 1.5 V VGS=4.5V, ID=0.2A 3 Ω Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A 2 Ω Forward Transconductance gFS V DS=10V,ID=0.2A 0.12 S Dynamic Characteristics (Note4) Input Capacitance Clss 27 PF Output Capacitance Coss 12 PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 6 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) 2.5 nS Turn-on Rise Time tr 6 nS Turn-Off Delay Time td(off) 20 nS Turn-Off Fall Time tf VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω 7 nS Total Gate Charge Qg VDS=25V,ID=0.3A, VGS=10V 1.7 2.4 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD V GS=0V,IS=0.22A 1.3 V Diode Forward Current (Note 2) IS 0.22 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production

Wuxi NCE Power Semiconductor Co., Ltd Page v 1 . 0 5 BSS138 Pb Free Product http://www.ncepower.com Square Wave Pluse Duration(sec) Figure 12 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance

Wuxi NCE Power Semiconductor Co., Ltd Page v 1 . 0 6 BSS138 Pb Free Product http://www.ncepower.com SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

Wuxi NCE Power Semiconductor Co., Ltd Page v 1 . 0 7 BSS138 Pb Free Product http://www.ncepower.com ATTENTION: ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before us ing any NCE power products described or contained herein in such applications. ■ NCE power assumes no responsibility for equipment failures that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. ■ Specifications of any and all NCE powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer’s products or equipment. ■ NCE power Semiconductor CO.,LTD. strives to supply hi gh-quality high-reliability pr oducts. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accu rate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. ■ This catalog provides information as of Sep, 2010. Specifications and information herein are subject to change without notice.