BSS138 UMW | Alldatasheet

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Technical content

Features

  • VDS (V) 50V
  • ID 300 mA (VGS 10V)
  • RDS(ON) 2.5Ω (VGS 10V)
  • Low On-Resistance ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 50 Drain-Gate Voltage RGS≤ 20KΩ VDG 50 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 300 mA Power Dissipation PD 300 mW Thermal Resistance.Junction- to-Ambient RthJA 417 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 50 V Zero Gate Voltage Drain Current IDSS VDS=50V, VGS=0V 0.5 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 uA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 0.7 1.5 V Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=500mA 2.5 Ω Forward Transconductance gFS VDS=25V, ID=0.3A,f=1KHz 100 mS Input Capacitance Ciss 50 Output Capacitance Coss 25 Reverse Transfer Capacitance Crss 8 Turn-On DelayTime td(on) 20 Turn-Off DelayTime td(off) 20 ns VDS=30V, ID=0.3A,RG=50Ω VGS=0V, VDS=10V, f=1MHz pF ESD Rating: 1.5KV HBM● VGS=2.5V, ID=500mA 3.5
  • RDS(ON) 3.5Ω (VGS =2.5V) UMW BSS138 UMW R UMW BSS138UMW BSS138 SOT–23 1. GATE 2. SOURCE 3. DRAIN 1www.umw-ic.com 友台半导体有限公司 MARKING S S

0.1 0.2 0.3 0.4 0.5 0.6 32 54 76 8 9 I , DRAIN-SOURCE CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Drain-Source Currentvs.Drain-SourceVoltage T = 25°C j V = 3.5V GS V = 3.25V GS V = 3.0V GS V = 2.75V GS V = 2.5V GS V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Transfer Characteristics 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 I , DRAIN-SOURCE CURRENT (A) D -55°C 150°C 25°C V = 1V DS ■ Typical Characterisitics 0.65 T , JUNCTION TEMPERATURE (°C) j Fig. 3 Drain-Source On Resistance vs. Junction Temperature 0.85 1.05 1.25 1.65 1.45 1.85 2.05 2.25 2.45 -55 -5 45 95 145 R , NORMALIZED DRAIN-SOURCE ON RESISTANCE ( DS(ON) V = 10V GS V = 4.5V GS I = 0.5A D I = 0.1A D 0.2 0.4 0.6 0.8 1.4 1.2 1.8 1.6 -40 -55 5-25 -10 5020 35 80 9565 110 125 140 V , GATE THRESHOLD VOLTAGE (V) GS(th) T , JUNCTION TEMPERATURE (°C) j Fig. 4 Gate Threshold Voltage vs. Junction Temperature I = 250uA D 0.05 0.5 V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 5 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 2.5V GS I , DIODE CURRENT (A) D 0.001 0.01 0.1 V , DIODE FORWARD VOLTAGE (V) SD Fig. 6 Body Diode Current vs. Body Diode Voltage 150°C -55°C 25°C SMD Type UMW BSS138 UMW R UMW BSS138UMW BSS138 2www.umw-ic.com 友台半导体有限公司

■ Typical Characterisitics 0.5 1.5 2.5 3.5 0.05 0.5 I , DRAIN CURRENT (A) D Fig. 7 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 10V GS C, CAPACITANCE (pF) 100 V , DRAIN SOURCE VOLTAGE (V) DS Fig. 8 Capacitance vs. Drain Source Voltage 0 5 10 15 20 25 30 V = 0V GS f = 1MHz C rSS C OSS C iSS 3www.umw-ic.com 友台半导体有限公司 SMD Type UMW BSS138 UMW R UMW BSS138UMW BSS138

Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. www.umw-ic.com 4 友台半导体有限公司 SMD Type UMW BSS138 UMW R UMW BSS138UMW BSS138