BSS138 HDSEMI | Alldatasheet

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H igh Diode Semiconductor Marking: SOT-23 Plastic-Encapsulate MOSFET N Channel MOSFET D G SOT- 23

  • SS Product Summary S BSS138 V (BR)DSS R DS(on) MAX I D V 3.5Ω@10V 220mA 6Ω@4.5V High density cell design for extremely low R DS(on) Rugged an d Relaible Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays Parameter Symbol Value Unit Drain-Source Voltage V DS 5 0 Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current I D 0.22 A Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient R θJA 357 ℃/W Operating Temperature T j 150 Storage Temperature T stg -55 ~+150

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 50 V Gate-body leakage I GSS V DS =0V, V GS =±20V ±100 nA V DS =50V, V GS =0V 0.5 µA Zero gate voltage drain current I DSS V DS =30V, V GS =0V 100 nA On characteristics Gate-threshold voltage (note 1) V GS(th) V DS GS , I D =1mA 0.80 1.50 V V GS =10V, I D =0.22A 3.50 Static drain-source on-resistance (note 1) R DS(on) V GS =4.5V, I D =0.22A 6 Ω Forward transconductance (note 1) g FS V DS =10V, I D =0.22A 0.12 S Dynamic characteristics (note 2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss V DS =25V,V GS =0V, f=1MHz pF Switching characteristics Turn-on delay time (note 1,2) t d(on) Rise time (note 1,2) t r Turn-off delay time (note 1,2) t d(off) Fall time (note 1,2) t f V DD =30V, V DS =10V, I D =0.29A,R GEN =6Ω ns Drain-source body diode characteristics Body diode forward voltage (note 1) V SD I S =0.44A, V GS = 0V 1.4 V Notes: 1. Pulse Test ; Pulse Wi dth ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify.

H igh Diode Semiconductor Typical Characteristics 1E-3 0.01 0.1 012345 0.0 0.5 1.0 1.5 2.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 02468 1 0 012345 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 Pulsed Pulsed T a =100 V SD I S T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =10V V GS =5V V GS =4V V GS =3V V GS =3V,4V,5V,6V Output Characteristics V GS =2V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) V GS =4.5V T a =25 Pulsed V GS =10V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) T a =100 T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) I D =500mA V DS =3V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100 T a =25 I D =250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j ( )

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor