UF5400G HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 3.0A
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode UF540XG X:From 0 to 8 DO-2 DO-27 Plastic-Encapsulate Diodes High Efficient Rectifier UF5400G THRU UF5408G Item Symbol Unit I F(AV) I FSM I 60Hz Half-sine wave, Resistance 60Hz Half-sine wave,1 cycle, Ta=25℃ 300 Item Symbol Unit Test Condition Peak Forward Voltage V FM V I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 Reverse Recovery time t rr ns I F =0.5A I R =1A I RR =0.25A 50 75 1.0 1.3 1.7 150 I FM =3.0A UF540 500 1G 2G 3G 4G 5G 6G 7G 8G UF540 0G 1G 2G 3G 4G 6G 7G 8G5G load, Ta=75 35 70 140 280 420 560 700210 350 Maximum RMS V RMS V Voltage R θJ-A Between junction and ambient 20 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 10
H igh Diode Semiconductor IFSM A Number of Cycles 8.3ms Single Half Sine Wave JEDEC Method 1 2 4 6 8 10 20 40 60 80 100 110 140 170 200 Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 1.5 2.25 100 150 IO(A S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 0.75 3.0 IF(A) TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) UF5405G-UF5408G UF5404G UF5400G-UF5403G FIG.5: Diagram of circuit and Testing wave form of reverse recovery time FIG.4:TYPICAL REVERSE CHARACTERISTICS FIG.3 : TYPICAL FORWARD CHARACTERISTICS FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1 FORWARD CURRENT DERATING CURVE
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers