MMBD301

MMBD301 HDSEMI | Alldatasheet

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Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） SOT-23 Plastic-Encapsulate Diodes MMBD301 Small Surface Mounting Type High Reliability Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IO Forward Current 50 mA PD Power Dissipation 200 mW RθJA Thermal Resistance from Junction to Ambient 500 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) I R=10μA 30 V Reverse current IR V R=25V 200 nA IF=1mA 0.45 Forward voltage VF IF=10mA 0.6 V Total capacitance Ctot V R=15V,f=1MHz 1.5 pF Schottky Rectifier

H igh Diode Semiconductor Typical Characteristics 0 100 200 300 400 500 600 700 800 0.01 0.1 0 5 10 15 20 25 30 1E-3 0.01 0.1 02 5 5 0 75 100 1 25 100 150 200 250 0 5 10 15 20 Forward Characteristics FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (mV) T a =25 T a =100 T a =100 T a =25 Reverse Characteristics REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Power Derating Curve CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) Capacitance Characteristics T a =25 f=1MHz

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor