BS107

BS107 SYC | Alldatasheet

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N-Channel 200-V (D-S) MOSFETs /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) VN2010L 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 BS107 200 28 @ VGS = 2.8 V 0.8 to 3 0.12 /C0068Low On-Resistance: 6 /C0087 /C0068Secondary Breakdown Free: 220 V /C0068Low Power/Voltage Driven /C0068Low Input and Output Leakage /C0068Excellent Thermal Stability /C0068Low Offset Voltage /C0068Full-Voltage Operation /C0068Easily Driven Without Buffer /C0068Low Error Voltage /C0068No High-Temperature “Run-Away” /C0068High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. /C0068Telephone Mute Switches, Ringer Circuits /C0068Power Supply, Converters /C0068Motor Control TO-226AA (TO-92) Top View S D G VN2010L TO-92-18RM (TO-18 Lead Form) Top View D S G BS107 Device Marking Front View “S” VN 2010L xxyy “S” = Siliconix Logo xxyy = Date Code Device Marking Front View “S” BS 107 xxyy “S” = Siliconix Logo xxyy = Date Code /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Parameter Symbol VN2010L BS107 Unit Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS /C003430 /C003425 V /C0095 TA= 25/C0095C 0.19 0.12 Continuous Drain Current (TJ = 150/C0095C) TA= 100/C0095C ID 0.12 A Pulsed Drain Currenta IDM 0.8 TA= 25/C0095C 0.8 0.5 Power Dissipation TA= 100/C0095C PD 0.32 W Thermal Resistance, Junction-to-Ambient R thJA 156 250 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature.

/C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits VN2010L BS107 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 /C0109A 220 200 200 Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 1 mA 1.2 0.8 1.8 0.8 3 V VDS = 0 V, VGS = /C003420 V /C003410 Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003415 V /C003410 nA Drain Leakage Current IDSV VDS = 70 V, VGS = 0.2 V 1 VDS = 130 V, VGS = 0 V 0.03 /C0109 Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V 1 /C0109A TJ = 125/C0095C 100 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 0.7 0.1 A VGS = 2.8 V, ID = 0.02 A 6 28 Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.05 A 6 10 /C0087 TJ = 125/C0095C 11 20 Forward Transconductanceb gfs VDS = 15 V, ID = 0.1 A 180 125 Common Source Output Conductanceb gos VDS = 15 V, ID = 0.05 A 0.15 mS Dynamic Input Capacitance C iss 35 60 Output Capacitance C oss VDS =25 V, VGS = 0 V, f = 1 MHz 9 30 pF Reverse Transfer Capacitance C rss 1 15 Switchingc Turn-On Time tON VDD = 25 V, RL = 250 /C0087 /C0094 5 20 Turn-Off Time tOFF ID /C0094 0.1 A, VGEN = 10 V R G = 25 /C0087 21 30 ns Notes a. For DESIGN AID ONLY, not subject to production testing. VNDQ20 b. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. c. Switching time is essentially independent of operating temperature.

/C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Ohmic Region Characteristics Output Characteristics for Low Gate Drive On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage VGS – Gate-Source Voltage (V) V GS – Gate-Source Voltage (V) VDS – Drain-to-Source Voltage (V) V DS – Drain-to-Source Voltage (V) ID – Drain Current (A) TJ – Junction Temperature (/C0095C) 0 4 8 12 16 20 ID = 500 mA 50 mA 250 mA 12.5 10.0 7.5 0 0.2 1.0 5.0 2.5 0.4 0.6 0.8 VGS = 10 V 0.5 0123 4 5 0.4 0.3 0.2 0.1 VGS = 10 V 5 V 4 V 3 V 2 V 6 V 0 0.4 0.8 1.2 1.6 2.0 VGS = 2.2 V 2.0 V 1.8 V 1.6 V 1.4 V 0.6 V1.2 V 1.0 V 500 400 300 200 100 012 3 4 25/C0095C 125/C0095C VDS = 15 V TJ = –55/C0095C 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 VGS = 4.5 V 10 mA ID – Drain Current (A) ID – Drain Current (mA) ID – Drain Current (mA) rDS(on) – On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) ID = 50 mA

/C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Threshold Region Capacitance Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Gate Charge Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V) Q g – Total Gate Charge (pC) 0.01 0 0.4 0.1 0.8 1.2 1.6 2.0 VDS = 5 V TJ = 150/C0095C –55/C0095C 25/C0095C 01 0 5 0 20 30 40 C oss C iss C rss VGS = 0 V f = 1 MHz 15.0 12.5 10.0 0 250 1250 7.5 5.0 500 750 1000 2.5 ID = 0.1 A 160 V VDS = 100 V 0.01 0.1 1.0 100 VDD = 25 V R G = 25 /C0087 VGS = 0 to 10 V 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM td(off) td(on) tr tf ID – Drain Current (mA) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V)