BMH027MR07E1G3

BMH027MR07E1G3 BASICSEMI | Alldatasheet

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Package: Pcore TM E1B Schematic Diagram 1 / 11www.basicsemi.com VDSS RDS(on).typ 650V 40 A 30 mΩ@VGS=18 V ID (TH=100°C) Product Summary Note: This module is under development. Therefore, this preliminary specification might be changed in near future.If you use these data for various calculation, please contact us. Full Bridge Module SiC 650V MOSFET Target Datasheet Rev. 0.0 Electrical Features Low RDS(on) High current density Low inductance design Low switching losses Less susceptible to malfunction due to high threshold voltage: VGS(th).typ = 4.0V Built-in SiC schottky barrier diode Zero Reverse Recovery from Diodes Low diode forward voltage Intergrated NTC temperature sensor Press-FIT contact technology  Rugged mounting due to intergrated mouting clamps Mechanical Features High Frequency converter/Inverters DC-DC Converters  EV Chargers  UPS systems  Solar applications Potential Applications  Si3N4 ceramic substrate with excelent power cycling capability BMH027MR07E1G3

2 / 11www.basicsemi.com Maximum Ratings(at T vj=25°C unless otherwise specified) Recommended values Symbol Parameter Test Conditions UnitMaximum Ratings V A W V VDSS ]+VGSS] ]-VGSS] ]ID] ]IDM] ]-ID](*2) ]IDRM] PD Tvjop Tstg Visol Drain-source voltage, gate-source short-circuited Gate-source voltage, drain-source short-circuited Drain current Continuous (*1) (*1) (*3) Pulsed Pulsed Tvj=175°C, TH=25°C RMS, AC, 50Hz, 1min Power dissipation Operating virtual junction temperature (under switching conditions) Storage temperature Isolation test voltage 650 105 175 -40~125 3000 TH=100°C Continuous TH=100°C (*1) Including under switching condition (*2) Only for Body diode (*3) Only the duty of temperature over 150 deg.C and under 175 deg.C against 150 deg.C can be available within 20%. Target Datasheet Rev. 0.0 V V +18…+20 -6…0 VGS(on) VGS(off) On-state gate voltage Off-state gate voltage Symbol Parameter Test Conditions Values Unit BMH027MR07E1G3

3 / 11www.basicsemi.com SiC MOSFET Module Target Datasheet Rev. 0.0 ]+IGSS] ]-IGSS] VGS(th) Electrical properties of MOSFET (at Tvj= 25°C unless otherwise specified) μA μA V mΩ nF Ω µJ nC uJ ns Drain current, with gate short-circuited to source Gate leakage current, with drain short-circuited to source Gate-source threshold voltage Drain-source on-state resistance IDSS RDS(on) (@terminals) RDS(on) (@chip) VGS=0V VDS=650V VDS=0V VGS=25V VDS=0V VGS=-10V VDS=400V, VGS= 0V VDS=400V, ID=35A, VGS=18V/0V VDS=10V ID =3mA VGS=18V ID =35A VGS =0V VDS =400V ƒ =100kHz VGS=18V ID =35A Tvj=25°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. Ciss Coss Crss Eoss RG(int) QG Eon Eoff Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Total gate charge Turn-on switching energy Turn-off switching energy td(on) tr Turn-on delay time Rise time Coss stored energy =+18V/-4V; =300V =35A =4.7Ω =4.7Ω =60nH Eon includes diode reverse recovery VGS VDS ID RG(on) RG(off) Lσ ƒ =1MHz, open drain 4.0 200 0.1 0.1 2.8 30.0 39.5 27 39 2.3 0.25 0.01 2.1 296 229 181 170 5.2 42.5 - - td(off) tf Turn-off delay time Fall time BMH027MR07E1G3

4 / 11www.basicsemi.com SiC MOSFET Module Target Datasheet Rev. 0.0 Tvj=25°C 1.75 2.45 1.60 2.20 125 158 Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C VSD (@terminals) V ns A uJ nC Diode forward on voltage VSD (@chip) VGS=-4V ISD =35A VGS=-4V ISD =35A Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. trr Qrr Reverse recovery time Recovered charge Irrm Err Peak reverse recovery current Reverse recovery energy Tvj=25°C 1.05 1.40 0.90 1.15 Tvj=175°C Tvj=25°C Tvj=175°C VSD (@terminals) VDiode forward on voltage VSD (@chip) VGS=+18V ISD =35A VGS=+18V ISD =35A Electrical properties of Body Diode (at T vj= 25°C unless otherwise specified) Thermal properties NTC Thermistor K/WPer Switch TA=25±0.01°C TA=25±0.01°C TA=25±0.5°C TA=25±0.5°C R50 = R25 exp [B25/50(1/T50 - 1/T25)] Rth(j-c) Thermal resistance junction to case 5 - 0.66- - K/W Per Switch Conductivity of thermal grease : 2W/mK Thickness of thermal grease : 50um Rth(c-h) Thermal resistance case to heatsink -- 0.71 Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. kΩ K mW/°C mW R25 pr R25/50 δ ΔR/R Nominal resistance Deviation of R25 B-Value Power Dissipation Constant Power Dissipation 3375 1.2 -3 3 11.5 6.3 10.0 5.0 >175 2.6 20.0 Si3N4- - - 50.0 Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. Module mm mm nH mΩ N g dCreep dClear Internal isolation basic insulation terminal to heatsink terminal to terminal terminal to heatsink terminal to terminal Creepage distance Clearance Comperative tracking index Mounting force per clamp Weight Stray inductance module Module lead resistance, terminals - chip Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. CTI RDD'+SS' F G Lp TC =25°C, per switch =+18V/-4V; =300V =35A =4.7Ω =4.7Ω VGS VDS ID RG(on) RG(off) =60nHLσ BMH027MR07E1G3

5 / 11www.basicsemi.com Fig.2 Tvj=175ºC Typical Output Characteristics Fig.1 Tvj=25ºC Typical Output Characteristics Fig.3 Tvj=25ºC 3rd Quadrant Characteristics Fig.5 Typical Gate Threshold Voltage vs. Junction Temperature Fig.4 Tvj=175ºC 3rd Quadrant Characteristics Fig.6 Typical Static Drain-Source On-Resistance vs. Junction Temperature Target Datasheet Rev. 0.0 -50 0 50 100 150 200 Gate Threshold Voltage : V GS(th) [V] Junction Temperature : Tvj [ºC] ID =3mA VDS=10V Pulsed BMH027MR07E1G3 0 2 4 6 8 10 Drain Current: ID [A] Drain-Source Voltage: VDS [V] VGS=12, 14, 16, 18, 20, 25V VGS=10V Tvj=25°C Pulsed 0 2 4 6 8 10 Drain Current: ID [A] Drain-Source Voltage: VDS [V] VGS=10, 12, 14, 16, 18, 20, 25V Tvj=175°C Pulsed -70 -60 -50 -40 -30 -20 -10 -10 -8 -6 -4 -2 0 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=25°C Pulsed VGS= -5V VGS= 0V VGS= 10V VGS= 15V VGS= 18V VGS= 20V -70 -60 -50 -40 -30 -20 -10 -10 -8 -6 -4 -2 0 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=175°C Pulsed VGS= -5V VGS= 0V VGS= 10V VGS= 15V VGS= 18V VGS= 20V -50 0 50 100 150 200 Static Drain-Source On-Resistance: R DS(on) [mΩ] Junction Temperature : Tvj [oC] VGS=18V ID =35A Pulsed

6 / 11www.basicsemi.com Fig.8 Typical Static Source-Drain Voltage vs. Junction Temperature (VGS=+18V, Chip) Fig.7 Typical Static Source-Drain Voltage vs. Junction Temperature (VGS=-4V, Chip) Fig.9 Typical Transfer Characteristics Fig.11 Coss Stored Energy Fig.10 Typical Capacitance vs. Drain-Source Voltage Fig.12 Dynamic Input Characteristics Target Datasheet Rev. 0.0 0.001 0.01 0.1 0.1 1 10 100 1000 Capacitance : C [pF] Drain-Source Voltage: VDS [V] Ciss Coss Crss Tvj =25°C f =100kHz VGS =0V 0 200 400 600 800 Coss Stored Energy : Eoss [µJ] Drain-Source Voltage: VDS [V] Tvj=25°C 0 20 40 60 80 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Tvj =25°C VDD =400V ID =30A Pulsed BMH027MR07E1G3 0.5 1.5 2.5 -50 0 50 100 150 200 Static Source-Drain Voltage : V SD [V] Junction Temperature : Tvj [oC] VGS=-4V ID =35A Pulsed 0.5 1.5 2.5 -50 0 50 100 150 200 Static Source-Drain Voltage : V SD [V] Junction Temperature : Tvj [oC] VGS=+18V ID =35A Pulsed 0 5 10 15 Drain current : ID [A] Gate-Source Voltage: VGS [V] VDS=10V Pulsed Tvj=175°C Tvj=150°C Tvj=25°C

7 / 11www.basicsemi.com Fig.14 Typical Switching Loss vs. External Gate Resistance VDD=300V, VGS=+18/-4V, ID=35A Fig.13 Typical Switching Loss vs. Drain Current VDD=300V, VGS=+18/-4V, RG(on)=4.7Ω, RG(off)=4.7Ω Fig.15 Typical Switching Time vs. Drain Current VDD=300V, VGS=+18/-4V, RG(on)=4.7Ω, RG(off)=4.7Ω Fig.16 Typical Switching Time vs. External Gate Resistance VDD=300V, VGS=+18/-4V, ID=35A Fig.17 Reverse bias safe operating area (max.) VGS=+18/-4V, RG(on) ≥ 4.7 Ω, RG(off) ≥ 4.7 Ω, Tvj=175°C Fig.18 NTC Resistance vs. Temperature Target Datasheet Rev. 0.0 0.01 0.1 100 1000 -50 0 50 100 150 200 Resistance : R NTC [KΩ] Temperature : T [ºC] BMH027MR07E1G3 tf tftr tr td(off) td(off) td(on) td(on) 100 200 300 400 500 600 700 800 0 10 20 30 40 50 60 70 Switching Energy : E [µJ] Drain Current : ID [A] Eon Eoff Err Tvj=25°C Tvj=175°C 200 400 600 800 1000 1200 1400 0 10 20 30 40 50 Switching Energy : E [µJ] External Gate Resistance : RG [Ω] Eon Eoff Err Tvj=25°C Tvj=175°C 120 0 10 20 30 40 50 60 70 Switching Time : t [nsec] Drain Current : ID [A] Tvj=25°C Tvj=175°C 120 160 200 0 10 20 30 40 50 Switching Time : t [nsec] External Gate Resistance : RG [Ω] Tvj=25°C Tvj=175°C 100 0 200 400 600 800 Drain current: ID [A] Drain-source voltage: VDS [V] RBSOA (Repetitive pulse) Chip Module

8 / 11www.basicsemi.com Fig.20 Typical Time and Peak Current of reverse recovery vs. External Gate Resistance VDD=300V, VGS=+18/-4V, ID=35A Fig.19 Typical Time and Peak Current of reverse recovery vs. Drain Current VDD=300V, VGS=+18/-4V, RG(on)=4.7Ω, RG(off)=4.7Ω Fig.21 Transient Thermal Impedance Zth(j-c).max= f(t) Target Datasheet Rev. 0.0 BMH027MR07E1G3 100 0 10 20 30 40 50 60 70 Reverse Recovery Time : t [nsec] Reverse Recovery Peak Current : Irrm [A] Drain Current : ID [A] Irrm trr Tvj=25°C Tvj=175°C 100 0 10 20 30 40 50 Reverse Recovery Time : t [nsec] Reverse Recovery Peak Current : Irrm [A] External Gate Resistance : RG [ [Ω trr Irrm Tvj=25°C Tvj=175°C 0.01 0.1 0.001 0.01 0.1 1 Thermal Impedance : Zth(j-c) [K/W] Time : tw [sec]

9 / 11www.basicsemi.com Definition of Switching Parameter (i) MOSFET (ii) Body Diode Target Datasheet Rev. 0.0 V GS +V GS 90% -V GS 10% I DV DS, I D 90％I D 90％I D 10％I D V DS 10％I D t d(on) t d(off) t r t f t (on) = td(on) + t r t (off) = t d(off) + t f V GS +V GS 90% -V GS 10% I DV DS, I D V DS2%V DS 2%I D t 1 t 2 t 3 t 4 V DS V DSI S I S 10% 10% 0 0 V DS I S V DS I S -I rrm t rr t 5 t 6 BMH027MR07E1G3

Package Dimensions (Unit: mm) Equivalent Circuit SiC MOSFET Module 10 / 11www.basicsemi.com Target Datasheet Rev. 0.0 AC1 AC2 DC1- DC2- DC+ BMH027MR07E1G3 12.14±0.35 1.44±0.20 21.25 26.50 16.00 6.40 3.20 12.80 6.40 9.60 16.00 21.25 26.50 3.20 9.60 12.80 14.05 3.20 9.60 12.80 14.05 33.80±0.30 28.10±0.20 19.40±0.20 16.40±0.20 62.80±0.50 48.00±0.30 41.00±0.20 36.80±0.20 42.50±0.20 53.00±0.10 4.50±0.10 2.30 0.00 -0.10 X8.50+0.30 16.42±0.50 PINOUT 6.40 6.40 DC2- DC2- DC+ DC+ DC+ DC+ T1 T2 DC1- DC1- AC1 AC1 AC2 AC2

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BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Notice and Warning Due to technical requirements products may contain dangerous substances.For information on the types in question please contact your nearest BASiC Semiconductor office. Except as otherwise explicitly approved by BASiC Semiconductor in a written document signed by authorized representatives of BASiC Semiconductor,BASiC Semiconductor’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. This product is not authorized for use (1) in life support systems or (2) for applications implanted into the human body, without the express written approval of BASiC Semiconductor. Document Version Date of Release Description of Changes Rev. 0.0 2024-09-24 Release of the initial datasheet. Target Datasheet Rev. 0.0 BMH027MR07E1G3