BTD5350 BASICSEMI | Alldatasheet
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www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 BTD5350E VCC1 IN+ IN- GND1 BTD5350M UVLO and input Logic ISOLATION VEE2 OUT VCC2 CLAMP72V VCC1 IN+ IN- GND1 BTD5350S UVLO and input Logic ISOLATION
8 VEE2
7 OUTL
6 OUT
7 UVLO
- Isolation voltage up to 5000Vrms(SOW-8)@UL1577； 3000Vrms(SOP-8)@UL1577
- Peak output current up to 10A
- Propagation delay 60ns
- Maximum switching frequency 1MHz
- Primary-side supply 3~18V
- Secondary-side supply up to 33V
- Primary-side and secondary-side power supply undervoltage lockout (UVLO)
- Compatible with 3.3V, 5V and 15V input
- Feature Options: Miller Clamp Options (BTD5350M) Split Outputs (BTD5350S) UVLO with respect to IGBT emitter (BTD5350E)
- 8-pin Package: SOP-8 with 4mm creepage SOW-8 with 8.5mm creepage
- Operating Temperature -40~125℃ 1.Features 2.Applications BTD5350 is a family of single-channel, isolated gate driv- er with peak output current up to 10A, available in SOP-8 (narrow-body) or SOW-8 (wide-body) packages and sup- ports isolation voltages up to 3000Vrms and 5000Vrms respectively. They can be used to drive IGBTs and Si/SiC MOSFETs. BTD5350 family offers 3 Feature Options: BTD5350M provides Miller clamp function to prevent false turn-on caused by Miller current. BTD5350S provides a split output with rise and fall time individually configurable. BTD5350E provides UVLO in positive power supply of secondary-side to ensure that power devices get suffi- cient gate turn-on voltage.
- Motor drivers
- EV chargers
- Telecommunication power supplies
- EV power supplies
- UPS
- String solar inverters 3.Description 4.Functional Block Diagram Single-Channel Isolated Gate Driver BTD5350 BTD5350E VCC1 IN+ IN- GND1 BTD5350M UVLO and input Logic ISOLATION VEE2 OUT VCC2 CLAMP72V VCC1 IN+ IN- GND1 BTD5350S UVLO and input Logic ISOLATION
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 INDEX
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 Part No. Pin Configuration Isolation Voltage UVLO Threshold Operating Temperature Package Package Material Quantity Marking BTD5350MBPR Miller-clamp 3000Vrms -40~125℃ SOP-8 Tape & Reel 2500pcs /Reel BTD5350MB BTD5350MCPR 11V BTD5350MC BTD5350MBWR 5000Vrms SOW-8 1000pcs /Reel BTD5350MB BTD5350MCWR 11V BTD5350MC BTD5350SBPR Split output 3000Vrms SOP-8 2500pcs /Reel BTD5350SB BTD5350SCPR 11V BTD5350SC BTD5350SBWR 5000Vrms SOW-8 1000pcs /Reel BTD5350SB BTD5350SCWR 11V BTD5350SC BTD5350EBPR UVLO with refer- ence to GND2 3000Vrms SOP-8 2500pcs /Reel BTD5350EB BTD5350ECPR 11V BTD5350EC BTD5350EBWR 5000Vrms SOW-8 1000pcs /Reel BTD5350EB BTD5350ECWR 11V BTD5350EC 5.Product Information
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 NO. NAME TYPE (1) DESCRIPTION PACKAGE
1 VCC1 P Input supply
2 IN+ I Non-inverting gate signal input pin
3 IN- I Inverting gate signal input pin
4 GND1 G Input ground
5 VCC2 P Positive output supply rail
6 OUT O Gate-Drive pullup output pin
7 GND2 G Gate-Drive common pin
8 VEE2 P Negative output supply rail
(1) P=Power, G=Ground, I=Input, O=Output NO. NAME TYPE (1) DESCRIPTION PACKAGE
6 OUTH O Gate-Drive pullup output pin
7 OUTL O Gate-Drive pulldown output pin
(1) P=Power, G=Ground, I=Input, O=Output BTD5350S VEE2 OUTL OUTH VCC2 VCC1 IN+ IN- GND1 BTD5350M VEE2 CLAMP OUT VCC2 VCC1 IN+ IN- GND1 BTD5350E VEE2 GND2 OUT VCC2 VCC1 IN+ IN- GND1 6.Pin Configuration and Functions
6.2 BTD5350S
NO. NAME TYPE (1) DESCRIPTION PACKAGE
1 VCC1 P Input supply voltage
6 OUT O Gate-drive output
7 CLAMP I Miller-clamp input
(1) P=Power, G=Ground, I=Input, O=Output
6.1 BTD5350M
6.3 BTD5350E
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 7. Specification Parameters
7.1 Absolute Limits
PARAMETER TEST CONDITIONS MIN MAX UNIT Input bias pin supply voltage VCC1-GND1 -0.3 18 V Driver bias supply VCC2-VEE2 -0.3 35 VEE2 bipolar supply voltage for E version VEE2-GND2 -17.5 0.3 Output signal voltage OUT, OUTH, OUTL, CLAMP VEE2-0.3 VCC2+0.3 Input signal voltage IN+, IN- GND1-5 VCC1+0.3 Junction temperature, TJ - -40 150 ℃Storage temperature, TS - -65 150 Pin soldering temperature, TL Duration ＜ 10s - 300 ESD Human-body-model (HBM) ±3000 V Charged-device model (CDM) ±1500 Note: These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability, and cause permanent damage to the device under severe conditions.
7.2 Thermal Information
RθJA Junction-to-ambient thermal resistance 87.7 91.4 ℃ /W RθJC(top) Junction-to-case (top) thermal resistance 19.4 35.1 RθJB Junction-to-board thermal resistance 43.0 73.8 ψJT Junction-to-top characterization parameter 57.3 51.0 ψJB Junction-to-board characterization parameter 65.7 47.7
7.3 Recommended Operating Conditions
SYMBOL PARAMETER MIN MAX UNIT VCC1 Input supply voltage (VCC1–GND1) 3 15 VVCC2 Total supply voltage output side (VCC2–VEE2) BTD5350xCx 13.2 33 BTD5350xBx 9.5 33 VEE2 Bipolar supply voltage for E version (VEE2–GND2) -16 0 TA Ambient temperature -40 125 ℃
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 PARAMETER TEST CONDITIONS MIN MAX UNIT SOP-8 Maximum power dissipation on input and output VCC1=15V, VCC2=15V, f=2.1MHz, 50% duty cycle, square wave, 2.2nF capacitor - 1.14 WMaximum input power dissipation - 0.05 Maximum output power dissipation - 1.09 SOW-8 Maximum power dissipation on input and output VCC1=15V, VCC2=15V, f=1.9MHz, 50% duty cycle, square wave, 2.2nF load capacitor - 1.04 WMaximum input power dissipation - 0.05 Maximum output power dissipation - 0.99 SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENTS IVCC1 Input supply quiescent current - - 1.4 2.4 mA IVCC2 Output supply quiescent current - - 1.3 1.8 SUPPLY VOL TAGE UNDERVOL TAGE THRESHOLDS VON1 VCC1-GND1 Positive-going UVLO threshold voltage - - 2.6 2.8 VVOFF1 VCC1-GND1 Negative-going UVLO threshold voltage - 2.4 2.5 - VUV, HYS1 VCC1-GND1 UVLO threshold hysteresis - - 0.1 - UVLO THRESHOLDS BTD5350xCx VON2 VCC2-VEE2 Positive-going UVLO threshold voltage - - 12 13 VVOFF2 VCC2-VEE2 Negative-going UVLO threshold voltage - 10.3 11 - VUV, HYS2 VCC2-VEE2 UVLO threshold voltage hysteresis - - 1 - UVLO THRESHOLDS BTD5350xBx VON2 VCC2-VEE2 Positive-going UVLO threshold voltage - - 8.7 9.4 VVOFF2 VCC2-VEE2 Negative-going UVLO threshold voltage - 7.3 8 - VUV, HYS2 VCC2-VEE2 UVLO threshold voltage hysteresis - - 0.7 - LOGIC I/O VIH Positive-going input threshold voltage (IN+, IN-) - - 0.55×VCC1 0.7×VCC1 VVIL Negative-going input threshold voltage (IN+, IN-) - 0.35×VCC1 0.45×VCC1 - VIN, HYS Input Hysteresis voltage - - 0.1×VCC1 - IIH High-level input leakage at IN+ IN+=VCC1 - 160 240 µA IIL Low-level input leakage at IN- IN-=GND1 -240 -160 - IN-=GND1-5V -310 -100 - GATE DRIVER STAGE IOH Peak source current IN+=HIGH, IN-=LOW 5 10 - A IOL Peak sink current IN+=LOW, IN-=HIGH 5 10 - VOH High level output voltage VCC2-OUT or VCC2-OUTH IOUT=+20mA IN+=HIGH, IN-=LOW - 60 - mV VOL Low level output voltage OUT-VEE2 or OUTL-VEE2 IOUT=-20mA IN+=LOW, IN-=HIGH 5 7 - mV
7.5 Electrical Characteristics
TA=-40~125℃ , VCC1=3.3 or 5V, VCC2=15V, CL（1）=100pF. Output pin: current towards outside of the chip is positive direction; Input pin: current towards inside of the chip is positive direction.
7.4 Power Ratings
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 MILLER CLAMP BTD5350Mx Vclamp Low-level clamp voltage Iclamp=20mA - 7 10 mV Iclamp Low-level clamp current VCLAMP=VEEx+15V 5 10 - A Vclamp-TH Clamping threshold voltage - - 2.2 - V SHORT-CIRCUIT CLAMPING VCLP-OUT Clamping voltage （OUT-VCC2 or OUTH-VCC2） IN+=HIGH, IN–=LOW, tCLAMP=10µs, IOUTH or IOUT=500mA - 1 1.3 V Clamping voltage （VEE2-OUT or VEE2-OUTL or VEE2-CLAMP） IN+=LOW, IN–=HIGH, tCLAMP=10µs, ICLAMP or IOUTL=-500mA - 1.5 - IN+=LOW, IN–=HIGH, ICLAMP or IOUTL=-20mA - 0.9 1 ACTIVE PULL-DOWN FUNCTION VOUTSD Active pulldown voltage on OUTL, CLAMP, OUT IOUT=-1A (sinking into OUT, OUTL or CLAMP pin), VCC2=left open - 2.3 2.6 V SWITCHING PARAMETERS tPLH Propagation delay, high CL=100pF - 60 75 ns tPHL Propagation delay, low CL=100pF - 60 75 tr Output-signal rise time CL=1nF - 10 26 tf Output-signal fall time CL=1nF - 10 26 tPWD Pulse width distortion[tPHL-tPLH] CL=100pF - 1 20 tsk 2） Part-to-part skew CL=100pF - 1 25 tUVLO1-rec Undervoltage lockout recovery delay time Input side VCC1 - 50 - µs tUVLO2-rec Output side VCC2 - 50 - CMTI Common-mode transient immunity INx tied to GND or VCC1, VCM=1500V 100 150 - kV/µs Note: 1. CL: Load capacitance from output pin OUTx to VEE2 or GND2. 2. tsk is the magnitude of the difference in propagation delay times between the output of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads guaranteed by characterization. (Continued)
7.6 Insulation Specifications
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CLR External Clearance - 4 - - mm CPG External Creepage - 4 - - DTI Distance through the insulation - 17 - - µm CTI Comparative tracking index DIN EN 60112 600 - - V Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 150Vrms I-IV - - Rated mains voltage ≤ 300Vrms I- III - - DIN V VDE 0884–11 VIORM Maximum repetitive peak isolation voltageAC voltage (bipolar) 990 - - VPK VIOWM Maximum isolation working voltage AC voltage (sine wave); time dependent dielectric breakdown (TDDB) test 700 - - Vrms VIOTM Maximum transient isolation voltage 100% VIOTM, 60s; 120% VIOTM, 1s 4242 - - VPK VIOSM Maximum surge isolation voltage IEC 62368-1, 1.2/50µs waveform, 1.6VIOSM 4242 - - qpd Apparent charge Method a:VIN=VIOTM, 60s; Vpd=1.2 VIOTM, 10s - - 5 pCMethod a:VIN=VIOTM, 60s; Vpd=1.6 VIOTM, 10s - - 5 Method b1:VIN=1.2VIOTM, 1s; Vpd=1.875 VIOTM, 1s - - 5 CIO Barrier capacitance, input to output VIO=0.4Vpk, f=1MHz, sine wave - 1.2 - pF
7.6.1 SOP-8 Safety Parameters
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CLR External Clearance - 8.5 - - mm CPG External Creepage - 8.5 - - DTI Distance through the insulation - 17 - - µm CTI Comparative tracking index DIN EN 60112 600 - - V Overvoltage category per IEC 60664-1 Rated mains voltage ＜ 600Vrms I-III - - Rated mains voltage ＜ 1000Vrms I-II - - DIN V VDE 0884–11 VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 2121 - - VPK VIOWM Maximum isolation working voltage AC voltage (sine wave); time dependent dielectric breakdown (TDDB) test 1500 - - Vrms VIOTM Maximum transient isolation voltage 100% VIOTM, 60s; 120% VIOTM, 1s 7000 - - VPK VIOSM Maximum surge isolation voltage IEC 62368-1, 1.2/50µs waveform, 1.6 x VIOSM 8000 - - qpd Apparent charge Method a:VIN=VIOTM, 60s; Vpd=1.2 VIOTM, 10s - - 5 pCMethod a:VIN=VIOTM, 60s; Vpd=1.6 VIOTM, 10s - - 5 Method b1:VIN=1.2VIOTM, 1s; Vpd=1.875 VIOTM, 1s - - 5 CIO Barrier capacitance, input to output VIO=0.4Vpk, f=1MHz, sine wave - 1.2 - pF RIO Isolation resistance, input to output Test voltage of 500V, TA=25℃ 1012 - - ΩTest voltage of 500V, 100℃＜ TA ＜ 125℃ 1011 - - Test voltage of 500V, TS=150℃ 109 - - Pollution degree - - 2 - - UL1577 VISO Withstand isolation voltage 100% VISO, 60s; 120% VISO, 1s 5000 - - Vrms
7.6.2 SOW-8 Safety Parameters
RIO Isolation resistance, input to output Test voltage of 500V, TA=25℃ 10 - - ΩTest voltage of 500V, 100℃＜ TA ＜ 125℃ 10 - - Test voltage of 500V, TS=150℃ 10 - - Pollution degree - - 2 - - UL1577 VISO Withstand isolation voltage 100% VISO, 60s; 120% VISO, 1s 3000 - - Vrms (Continued)
8.1 Propagation Delay
input (see Figure 1); the propagation delay for inverting input (see Figure 2).
8.2 CMTI
Figure 3. CMTI Test Circuit for BTD5350Mx Figure 4. CMTI Test Circuit for BTD5350Sx Figure 5. CMTI Test Circuit for BTD5350Ex Figure 1. Input and Output Propagation Delay Figure 2. Input and Output Propagation Delay
9.1 Isolation Design Description
/secondary sides to enhance the CMTI performance and minimize the radiate emissions (see Figure 6, 7). Figure 6. Conceptual Block Diagram of a Capacitive Data Channel Figure 7. OOK Based Modulation Scheme
9.2 Input Stage Characteristics
appropriate pull-up or pull-down resistor to the input.
9.3 Output Booster Characteristics
device, BASiC recommends that appropriate pull-down resistor be added to the gate.
diodes at the gate to clamp the positive and negative power supplies respectively. Figure 8. Output Stage
9.4 Protection Functions
9.4.1 Undervoltage Lockout
Figure 9. UVLO Functions
9.4.2 Miller Clamp
9.4.3 Short-Circuit Clamping
conduction capability as needed.
9.4.4 Active Pull-Down
9.5 ESD Structure
The figure below shows the ESD-protected diode configuration of the input and output pins. Figure 10. ESD Structure Diagram
9.6 Truth Table
10.1 Typical Applications
quency interference and delay needs to be taken into account. between VCC2-VEE2 (Figure 11,12,13). Figure 11. Typical Application Circuit for BTD5350M Figure 12. Typical Application Circuit for BTD5350S Figure 13. Typical Application Circuit for BTD5350E
10.2 Recommended Design Of Secondary Side Supply
and negative supplies (see Figure 15). Figure 14. Voltage Regulator Design Figure 15. Dual-Supply Design
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 11.Packaging and Packing Information
11.1 Package Identifier
11.1.1 SOP-8 Package Identifier
Note: 1) Legend unit: mm. SOLDER PASTE EXAMPLE ± °°
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 ± °°
11.1.2 SOW-8 Package Identifier
Note: 1) Legend unit: mm. SOLDER PASTE EXAMPLE This integrated circuit can be damaged by ESD.BASiC recommends that all integrated circuits be handled with appropriate precautions.Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Electrostatic Discharge Caution
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350
11.2 Packing Information
Reel Width(W1) REEL DIMENSIONS Reel Diameter ITEM FOOTPRINT Reel Diameter 13 inches Reel Width(W1) 12.4mm A0(5.30±0.10) P0(4.00±0.10) F(5.50±0.10) K1(1.65±0.10) K0(2.20±0.10) T(0.30±0.05) B0(6.60±0.10) W(12.00±0.30)
11.2.1 SOP-8 Packing Information
Note: 1) Legend unit: mm.
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 Reel Width(W1) REEL DIMENSIONS Reel Diameter ITEM FOOTPRINT Reel Diameter 13 inches Reel Width(W1) 16.4mm P(8.00±0.10) P2(2.00±0.10) W(16.00±0.15) B0(9.30-9.35) A1(3.50-3.60) A0(6.45-6.50) K0(2.10±0.10) P0(4.00±0.10) F(7.50±0.10) D0(φ1.50-1.60)
11.2.2 SOW-8 Packing Information
Note: 1) Legend unit: mm.
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD5350 12.Version Description Document Version Date of Release Description of Changes Rev.0.0 2023-01-04 Draft datasheet created. Rev.0.1 2023-11-28 Figures and description updated BASiC Semiconductor Ltd. Shenzhen, China © 2023 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.