BTD25350X BASICSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 19
Technical content
BTD25350MS BTD25350MEBTD25350MM www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x SOW-18 ISOLATION Functional Isolation ISOLATION Functional Isolation ISOLATION Functional Isolation BTD25350MM DT DIS IN2 3 IN1 VCC VCC 4 NC 1 NC 8 GND 5 NC 10 UVLO and input Logic VDD2 OUT2 CLAMP1 VDD1 VEE1 UVLO Level Shift and Ctrl Logic UVLO Level Shift and Ctrl Logic OUT116 VEE214 CLAMP213 BTD25350ME DT DIS IN2 3 IN1 VCC VCC 4 NC 1 NC 8 GND 5 NC 10 UVLO and input Logic VEE2 GND2 VDD2 OUT2 VEE1 GND1 VDD1 OUT1 UVLO Level Shift and Ctrl Logic UVLO Level Shift and Ctrl Logic UVLO2 UVLO1 BTD25350MS DT DIS IN2 3 IN1 VCC VCC 4 NC 1 NC 8 GND 5 NC 10 UVLO and input Logic
14 VEE2
13 OUTL2
18 VEE1
17 OUTL1
1.Features 3.Description Dual-Channel Isolated Gate Driver BTD25350x
- Isolation voltage up to 5000Vrms
- Peak output current up to 10A
- Propagation delay 60ns
- Maximum switching frequency 1MHz
- Primary-side supply 3~5V
- Secondary-side supply up to 33V
- Primary-side and secondary-side power supply undervoltage lockout (UVLO)
- Compatible with 3.3V, 5V input
- Feature Options: Miller Clamp Options (BTD25350MM) Split Outputs (BTD25350MS) UVLO referenced to secondary side GNDx (BTD25350ME)
- SOW-18 with 8.5mm creepage
- Operating Temperature -40~125℃ BTD25350x is a family of dual-channel, isolated gate driver with peak output current up to 10A, available in SOW-18 (wide-body) package and supports isolation voltages up to 5000Vrms. They can be used to drive IGBTs and Si/SiC MOSFETs. BTD25350x family offers 3 Feature Options: BTD25350MM provides Miller clamp function to prevent false turn-on caused by Miller current. BTD25350MS provides a split output with rise and fall time individually configurable. BTD25350ME provides UVLO in positive power supply of secondary-side to ensure that power devices get suffi- cient gate turn-on voltage. 2.Applications
- Motor drives
- EV chargers
- Telecommunication power supplies
- EV power supplies
- UPS
- String solar inverters 4.Functional Block Diagram
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x INDEX
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x Part No. Pin Configuration Isolation Voltage UVLO Threshold Operating Temperature Package Package Material Quantity Marking BTD25350MMBWR dead time configuration and disable function, Miller-clamp 5000Vrms -40~125℃ SOW-18 Tape & Reel 1000pcs /Reel BTD25350MMB BTD25350MMCWR 11V BTD25350MMC BTD25350MSBWR dead time configuration and disable function, split output 8V BTD25350MSB BTD25350MSCWR 11V BTD25350MSB BTD25350MEBWR dead time configuration and disable function, UVLO with reference to GNDx 8V BTD25350MEB BTD25350MECWR 11V BTD25350MEC 5.Product Information
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x NO. NAME TYPE (1) DESCRIPTION PACKAGE
1 NC - No internal connection
2 IN1 I Signal input channel 1
3 IN2 I Signal input channel 2
4 VCC P Primary-side supply voltage
5 GND G Primary side ground
6 DIS I Disables both driver outputs if asserted high,
enables if set low or left open
7 DT I Programmable dead time function
8 NC - No internal connection
9 VCC P Primary-side supply voltage
10 NC - No internal connection
11 VDD2 P Channel 2 positive output supply rail
12 OUT2 O Channel 2 gate-drive output
13 CLAMP2 I Channel 2 Miller-clamp input
14 VEE2 P Channel 2 negative output supply rail
15 VDD1 P Channel 1 positive output supply rail
16 OUT1 O Channel 1 gate-drive output
17 CLAMP1 I Channel 1 Miller-clamp input
18 VEE1 P Channel 1 negative output supply rail
(1) P=Power, G=Ground, I=Input, O=Output NC IN1 IN2 VCC OUT1 CLAMP1 VEE1 GND DIS DT NC CLAMP2 VEE2 VDD1 VCC OUT2 NC VDD2 NC IN1 IN2 VCC OUTH1 OUTL1 VEE1 GND DIS DT NC OUTL2 VEE2 VDD1 VCC OUTH2 NC VDD2 NC IN1 IN2 VCC OUT1 GND1 VEE1 GND DIS DT NC GND2 VEE2 VDD1 VCC OUT2 NC VDD2 BTD25350MEx 9 12 10 11 BTD25350MSx 9 12 10 11 BTD25350MMx 9 12 10 11 6.Pin Configuration and Functions
6.1 BTD25350MMx
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x NO. NAME TYPE (1) DESCRIPTION PACKAGE
5 GND G Primary-side ground reference
enables if set low or left open
12 OUTH2 O Channel 2 gate-drive pullup output
13 OUTL2 O Channel 2 gate-drive pulldown output
16 OUTH1 O Channel 1 gate-drive pullup output
17 OUTL1 O Channel 1 gate-drive pulldown output
(1) P=Power, G=Ground, I=Input, O=Output
6.2 BTD25350MSx
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x NO. NAME TYPE (1) DESCRIPTION PACKAGE enables if set low or left open
13 GND2 G Channel 2 gate-drive common
17 GND1 G Channel 1 gate-drive common
(1) P=Power, G=Ground, I=Input, O=Output
6.2 BTD25350MEx
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x PARAMETER TEST CONDITIONS MIN MAX UNIT Input bias pin supply voltage VCC-GND GND-0.3 6.5 V Driver bias supply VDDx-VEEx 0 35 Bipolar supply voltage for E version VEEx-GNDx -17.5 0.3 Output signal voltage OUTx, OUTHx, OUTLx, CLAMPx VEEx-0.3 VDDx+0.3 Input signal voltage INx, DT, DIS to GND GND-5V VCC+0.3 Operating Junction Temperature, TJ - -40 150 Storage Temperature, TS - -65 150 ESD Voltage Human body model (HBM) ±3000 V Charged device model (CDM) ±1500
7.2 Recommended Operating Conditions
SYMBOL PARAMETER MIN MAX UNIT VCC Input supply voltage (VCC-GND) 3 5 V VDDx Total supply voltage output side (VDDx-VEEx) BTD25350xBx 9.5 33 V BTD25350xCx 13.2 33 V VEEx Bipolar supply voltage for E version (VEEx–GNDx) -16 0 V TA Ambient temperature -40 125 ℃ 7. Specification Parameters
7.1 Absolute Limits
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENTS IVCCQ Primary side input supply quiescent current VDDx=15V, VIN1=VIN2=0V - 1.5 2 mA IVCCQ-ST Primary side input supply current VIN1=VIN2=5V, f=500kHz, PRIMARY SIDE UNDERVOL TAGE LOCKOUT VON_VCC Positive-going UVLO threshold voltage - - 2.6 - VVOFF_VCC Negative-going UVLO threshold voltage - - 2.5 - VUV_HYS_VCC Threshold hysteresis - - 0.1 - SECONDARY SIDE UNDERVOL TAGE LOCKOUT VON_VDDx Positive-going UVLO threshold voltage VDDx-VEEx BTD25350xxC - 12 13 V VOFF_VDDx Negative-going UVLO threshold voltage VDDx-VEEx 10.3 11 - VUV_HYSx Threshold hysteresis - 1 - VON_VDDx Positive-going UVLO threshold voltage VDDx-VEEx BTD25350xxB - 8.7 9.4 VOFF_VDDx Negative-going UVLO threshold voltage VDDx-VEEx 7.3 8 - VUV_HYSx Threshold hysteresis - 0.7 -
7.3 Electrical Characteristics
TA=-40~125℃ , VCC=3.3 or 5V, VDDx=15V, CL（1）=100pF. Output pin: current towards outside of the chip is positive direction; Input pin: current towards inside of the chip is positive direction.
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x INPUT CHARACTERISTICS VIH Positive-going input threshold voltage (INx, DIS) VCC=5V - 2.4 - VVIL Negative-going input threshold voltage (INx, DIS) VCC=5V - 1.4 - VI_HYS Input hysteresis voltage - 1 - IIH High-level input leakage at IN+ INx=VCC - 650 - µA IIL Low-level input leakage at IN- INx=GND - - 5 OUTPUT CHARACTERISTICS IOH Peak output source current - - 10 - A IOL Peak output sink current - - 10 - VOH Output voltage at high state (OUTx, OUTHx) IOUT=20mA - VDDx-0.06 - V VOL Output voltage at low state (OUTx, OUTLx) IOUT=-20mA VEEx+0.005 VEEx+0.007 - MILLER CLAMP BTD25350MMxx VCLAMP Low-level clamp voltage ICLAMP=-20mA - 7 10 mV ICLAMP Low-level clamp current VCLAMP=VEEx+15V - 10 - A VCLAMP_TH Clamping threshold voltage - - 2.2 - V SHORT-CIRCUIT CLAMPING VCLP-OUT Clamping voltage (VOUTx-VDDx or VOUTHx-VDDx) INx=HIGH, tCLAMP=10µs, IOUTHx or IOUTx=-500mA - 1 1.3 V Clamping voltage (VEEx-VOUTx or VEEx-VOUTLx or VEEx-CLAMPx) INx=LOW, tCLAMP=10µs, ICLAMPx or IOUTLx=500mA - 1.5 - INx=LOW，ICLAMPx or IOUTLx=20mA - 0.9 1 ACTIVE PULL-DOWN FUNCTION VOUTSD Active pulldown voltage on OUTLx, CLAMPx, OUTx IOUT=-1A (sinking into OUTx, OUTLx or CLAMPx pin), VDDx=left open - 2.3 2.6 V SWITCHING PARAMETERS tPLH Propagation delay from INx to OUTx rising edges CL=100pF - 60 75 ns tPHL Propagation delay from INx to OUTx falling edges CL=100pF - 60 75 tr Output rise time CL=1nF - 10 26 tf Output fall time CL=1nF - 10 26 tPWD Pulse width distortion |tPHL-tPLH| CL=100pF - 1 20 tsk Part-to-part skew CL=100pF - 1 25 tUVLO1-rec Undervoltage lockout recovery delay time Input side VCC - 40 - µs tUVLO2-rec Output side VDDx - 50 - CMTI Common-mode transient immunity INx fixed to GND or VCC, VCM=1500V 100 150 - kV/µs (Continued)
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x Symbol PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CLR External clearance - 8.5 - - mm CPG External creepage - 8.5 - - DTI Distance through the insulation - 17 - - µm CTI Comparative tracking index DIN EN 60112 600 - - V - Overvoltage category per IEC 60664-1 Voltage rating ≤ 600Vrms I-IV - - Voltage rating ≤ 1000Vrms I-III - - DIN V VDE 0884-11 VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 2121 - - VPK VIOWM Maximum isolation working voltage AC voltage (sine wave); time dependent dielectric breakdown （TDDB）1500 - - Vrms DC voltage 2121 - - VDC VIOTM Maximum transient isolation voltage VTEST=VIOTM, t=60s (qualification) VTEST=1.2×VIOTM, t=1s（100% production） 7000 - - VPK VIOSM Maximum surge isolation voltage IEC 62368-1, 1.2/50μs waveform, VTEST=1.6×VIOSM=12800VPK (qualification) 8000 - - Qpd Apparent charge Method a, After Input/Output safety test subgroup 2/3. VINI=VIOTM, tINI=60s； Vpd(m)=1.2×VIORM=2545VPK, tm=10s - - 5 pC Method a, After environmental tests subgroup 1. VINI=VIOTM, tINI=60s； Vpd(m)=1.6×VIORM=3394VPK, tm=10s - - 5 Method b1; At routine test (100% production) and preconditioning (type test) VINI=1.2×VIOTM, tINI=1s； Vpd(m)=1.875×VIORM=3977VPK, tm=1s - - 5 CIO Barrier capacitance, input to output VIO=0.4Vrms, f=1MHz, sine wave - 1.2 - pF RIO Isolation resistance, input to output Test voltage of 500V, TA=25℃ 1012 - - ΩTest voltage of 500V, 100℃≤ TA ≤ 125℃ 1011 - - Test voltage of 500V, TA=150℃ 109 - - Pollution degree - - 2 - - Climatic category - 40/125/21 UL1577 VISO Withstand isolation voltage VTEST=VISO, t=60 sec(qualification)； VTEST=1.2×VISO=6000Vrms, t=1 sec(100% production) 5000 - - Vrms
7.4 SAFETY PARAMETERS
8.1 Propagation Delay
The method for measuring the rise time (tr) and fall time (tf) see Figure 1. Figure 1. Input and Output Propagation Delay
8.2 CMTI
Figure 2. CMTI Test Circuit for BTD25350MMx Figure 3. CMTI Test Circuit for BTD25350MSx Figure 4. CMTI Test Circuit for BTD25350MEx
9.1 Isolation Design Description
/secondary sides to enhance the CMTI performance and minimize the radiate emissions (see Figure 5, 6). Figure 5. Conceptual Block Diagram of a Capacitive Data Channel Figure 6. OOK Based Modulation Scheme
9.2 Input Stage Characteristics
pull-up or pull-down resistor to the input.
9.3 Primary Side Device Function
9.3.1 Disable
is activated or deactivated according to the setting only when the VCC is kept above the undervoltage turn-on threshold.
9.3.2 Dead Time Setting
inserted, two outputs are allowed to be both high. Figure 7. Dead Time Setting
9.4 Output Booster Characteristics
device, BASiC recommends that appropriate pull-down resistor should be added to the gate. negative supply VEEx, in order to prevent gate transient over voltage. Figure 8. Output Stage
9.5 Protection Functions
9.5.1 Undervoltage Lockout
Figure 9. UVLO Functions
9.5.2 Miller Clamp
rent. The Miller clamp function clamps the gate voltage of the power device to VEEx with the output is in the off state.
9.5.3 Short-Circuit Clamping
external Schottky diodes to improve current conduction capability as needed.
9.5.4 Active Pull-Down
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x
9.6 ESD Structure
The figure below shows the ESD-protected diode configuration of the input and output pins. Figure 10. ESD Structure Diagram
9.7 Input and Output Logic Table
DESCRIPTION
If dead time function is used, output switching occurs after the dead time ended.See Programmable Dead Time (DT) pinL H L or left open L H H L L or left open H L H H L or left open L L Dead time stay open or programmed with RDT H H L or left open H H Dead time pin pulled to VCC Left open Left open L or left open L L - X X H L L - 4,9 2IN1 IN2 VCC DIS DT VDD2 OUT2 VDD1 CLAMP1 OUT1 VEE1 CLAMP2 GND VEE2 35V 35V INPUT DIS OUTPUT IN1 IN2 OUTH1 OUTL1 OUTH2 OUTL2 L L L or left open Hi-Z L Hi-Z L If dead time function is used, output switching occurs after the dead time ended.See Program- mable Dead Time (DT) pin L H L or left open Hi-Z L H Hi-Z H L L or left open H Hi-Z Hi-Z L H H L or left open Hi-Z L Hi-Z L Dead time stay open or programmed with RDT H H L or left open H Hi-Z H Hi-Z Dead time pin pulled to VCC Left open Left open L or left open Hi-Z L Hi-Z L - X X H Hi-Z L Hi-Z L -
10.1 Typical Applications
quency interference and delay needs to be taken into account. tween VDDx-VEEx (Figure 11,12,13). Figure 11. BTD25350MMx Application Diagram Figure 12. BTD25350MSx Application Diagram
Figure 13. BTD25350MEx Application Diagram
10.2 Recommended Design of Secondary Side Supply
ate the negative supply: use a regulator to generate stable negative voltage, or use both positive and negative supplies. Figure 14. Voltage Regulator Design Figure 15. Dual-Supply Design
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x 11.Packaging and Packing Information
11.1 Package Identifier
Note: 1) Legend unit: mm. This integrated circuit can be damaged by ESD.BASiC recommends that all integrated circuits be handled with appropriate precautions.Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Electrostatic Discharge Caution DETAIL A TYPICAL
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x Reel Diameter Reel Width(W1) REEL DIMENSIONS ITEM FOOTPRINT Reel Diameter 13 inches Reel Width(W1) 24mm
11.2 Packing Information
Note: 1) Legend unit: mm.
www.basicsemi.com Rev.0.1 Dual-Channel Isolated Gate Driver BTD25350x BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 12.Version Description REVISION NOTES DATE Rev.0.0 Released datasheet 24-Nov-2023 Rev.0.1 Primary Side Supply Voltage Value, Primary Side Power Supply Voltage Value, Package Infographic Update 25-Jan-2024