BTD3011X BASICSEMI | Alldatasheet
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www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x Single-Channel Isolated Gate Driver BTD3011x VISO VEE CONTROL VCC GND FAULT VEE COM VISO VGXX OUTH OUTL DESAT IN+ IN- ASSD LEVEL SHIFTER BOOTSTRAP CHARGE PUMP SHORT-CIRCUIT DETECTION - VDESAT COM CONTROL LOGIC/ SUPPLY VOLTAGE MONITORING CONTROL LOGIC/ SUPPLY VOLTAGE MONITORING TRANSCEIVER (BIDIRECTIONAL) TRANSCEIVER (BIDIRECTIONAL) 1.Features 3.Description
- Isolation voltage up to 5000Vrms
- Peak output current up to ±15A
- CMTI=150kV/μs Minimum
- Maximum switching frequency 75kHz
- Secondary-side supply up to 28V
- Primary-side and secondary-side power supply undervoltage lockout (UVLO)
- Compatible with 3.3V, 5V input
- Short circuit protection and soft shut down integrated
- Voltage regulator integrated for secondary-side power supply
- SOW-16 (wide-body) package
- Operating Temperature -40~125℃ BTD3011x is a single channel gate driver with galvanic isolation provided using magnetic coupling. The peak output drive current is ±15A. The SOW-16 package enables an isolation voltage of 5000Vrms. Short circuit protection, soft shut down and primary/secondary side undervoltage lockout (UVLO) are provided. Voltage reg- ulator is integrated for the secondary-side supply. the peripheral circuit design is significantly simplified. 2.Applications
- Industrial motor drives
- EV motor drives
- PV inverters
- Energy storage inverters 4.Functional Block Diagram
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x INDEX
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x Part No. Functions Isolation Voltage Operating Temperature Package Package Material Quantity Marking BTD3011R Short circuit protection, soft shut down, primary/secondary side UVLO, voltage regulator for secondary-side power supply 5000Vrms -40~125℃ SOW-16 Tape & Reel 1500pcs/ Reel BTD3011 5.Product Information
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x NO. NAME TYPE (1) DESCRIPTION PACKAGE
1 VCC P Primary-side supply voltage
2 GND G Primary side ground
3 IN+ I Non-inverted input
4 IN- I Inverted input
5 FAULT O Fault state output
6 NC - No internal connection
7 NC - No internal connection
8 GND G Primary side ground
9 NC G No internal connection
10 VEE G Connected to IGBT emitter/MOSFET source
11 DESAT I Desaturation monitoring voltage input
12 VGXX P Bootstrap and charge pump supply voltage source
13 OUTH O Driver output turn-on connection
14 VISO P Secondary-side positive power supply rail
15 COM P Secondary-side negative power supply rail
16 OUTL O Driver output turn-off connection
(1) P=Power, G=Ground, I=Input, O=Output VCC GND IN+ IN- VISO COM OUTL FAULT NC NC GND NC VEE DESAT BTD3011 VGXX OUTH13 6.Pin Configuration and Functions
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x PARAMETER TEST CONDITIONS MIN MAX UNIT Input bias pin supply voltage, VCC VCC-GND -0.5 6.5 V Secondary-side total supply voltage, VTOT VISO-COM -0.5 30 Secondary-side positive supply voltage VISO-VEE -0.5 17.5 Secondary-side negative supplyvoltage VEE-COM -0.5 15 Logic input voltage IN+, IN- to GND -0.5 VCC+0.5 Logic output voltage FAULT to GND -0.5 VCC+0.5 DESAT pin voltage DESAT-COM -0.5 VTOT+0.5 Switching frequency, fS - - 75 kHz Operating junction temperature, TJ - -40 150 ℃Storage temperature, TS - -40 150 Soldering temperature (10s), TL - - 300 Input power dissipation PP VCC=5V, VTOT=28V, TA=25℃ , fS=75kHz 188 mWOutput power dissipation PS 1602 Total IC power dissipation PDJS 1790 ESD Human body model (HBM) ±2000 V Charged device model (CDM) ±1000 Note: The above are stress levels only.Devices are not recommended to operate under these or any other conditions beyond these values.Prolonged operation under the absolute maximum rating may affect the reliability of the device, and in severe cases it may cause permanent damage to the devices.
7.2 Thermal Resistance Information
SYMBOL DESCRIPTION SOW-16 UNIT RθJA Junction-to-ambient thermal resistance 46.58 ℃ /W RθJC(top) Junction-to-case (top) thermal resistance 10.52 RθJB Junction-to-board thermal resistance 31.47 ψJT Junction-to-top characterization parameter 31.47 ψJB Junction-to-board characterization parameter 41.69 7.Specification Parameters
7.1 Absolute Maximum Ratings
7.3 Recommended Operation Conditions
SYMBOL PARAMETER MIN MAX UNIT VCC Input supply voltage 4.75 5.25 VVTOT Secondary-side total supply voltage, VISO-COM 22 28 VIN Logic input voltage 0 VCC TA Operating ambient temperature -40 125 ℃
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENTS IVCC Primary side quiescent current VIN=0V - - 17 mA IVISO Secondary side quiescent current VIN=0V - - 15 PRIMARY SIDE UNDERVOL TAGE LOCKOUT VON1 Primary side position supply voltage monitoring threshold Clear fault - 4.3 4.65 VVOFF1 Set fault 3.85 4.2 - VUV, HYS1 Hysteresis - 0.1 - SECONDARY SIDE POWER SUPPLY VISO(HS) Secondary side positive supply voltage regulation 21V ≤ VISO ≤ 30V, |IVEE| ≤ 1.5mA 14.5 15 15.5 V UVLOVISO Secondary side positive supply voltage monitoring threshold Clear fault - 13.2 14.2 Set fault 11.2 12.2 - Hysteresis - 1.0 - UVLOVEE Secondary side negative supply voltage monitoring threshold Clear fault - 4.92 5.5 Set fault 4.67 4.90 - Hysteresis - 0.02 - IVEE+ VEE source capability VTOT=15V, VEE-COM=0V - 0.2 - mAVTOT=25V, VEE-COM=7.5V - 3 - IVEE- VEE sink capability VTOT=25V, VEE-COM=12.5V - -3 - INPUT CHARACTERISTICS VIH Positive-going input threshold voltage (IN+, IN-) - 1.7 2.0 2.3 VVIL Negative-going input threshold voltage (IN+, IN-) - 1.4 1.6 1.8 VIN_HYS Input hysteresis voltage - 0.1 - - IIH High-level input leakage at IN+ INx=VCC 56 113 165 µA OUTPUT CHARACTERISTICS IOH Peak output source current IN+=HIGH, IN-=LOW - 15 - A IOL Peak output sink current IN+=LOW, IN-=HIGH - -15 - VISO-VOH Output voltage at high state (OUTx, OUTHx) IOUT=20mA, IN+=HIGH, IN-=LOW - - 0.04 V VOL-COM Output voltage at low state (OUTx, OUTLx) IOUT=-20mA, IN+=LOW, IN-=HIGH - - 0.04 RGHI Turn-on internal gate resistance I(GH)=250mA, VIN+=5V - 0.3 1.2 Ω RLHI Turn-off internal gate resistance I(GL)=-250mA, VIN+=0V - 0.25 1.1 SHORT CIRCUIT PROTECTION VDESAT DESAT detection level DESAT-VEE, VIN+=5V 9.5 10.5 11.5 V IDESAT DESAT sink current VDESAT=10V, VIN+=0V 4.5 5.5 6.5 mA IDES（BS） DESAT bias current VVCE-VVEE=4.5V, VIN+=5V - - 1 µA SWITCHING PARAMETERS tPLH Propagation delay from INx to OUTx rising edges CL=100pF 180 280 380 ns tPHL Propagation delay from INx to OUTx falling edges CL=100pF 200 287 359 tr Output rise time CL=10nF - 50 100 tf Output fall time CL=10nF - 50 100 tFAULT Faults propagation delay - - 190 750 tFAULT-pw Fault signal pulse width - 6.8 10 13.4 µs tFSSD1 ASSD rate of change VGE from 14.5V to 14V 60 ns tFSSD2 VGE from 14.5V to 2.5V 1750 2760 3800 CMTI Common-mode transient immunity INx fixed to GND or VCC, VCM=1500V - 150 - kV/µs
7.4 Electrical Characteristics
TA=-40~125℃， VCC=3.3 or 5V， VISO=25V， CL=100pF.
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x Symbol PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CLR External clearance - 8.5 - - mm CPG External creepage - 8.5 - - DTI Distance through the insulation - 21 - - µm CTI Comparative tracking index DIN EN 60112 600 - - V - Overvoltage category per IEC 60664-1 Voltage rating ≤ 600Vrms I-III - - Voltage rating ≤ 1000Vrms I-II - - DIN V VDE 0884-11 CIO Barrier capacitance, input to output VIO=0.4Vrms, f=1MHz, sine wave - 1.2 - pF RIO Isolation resistance, input to output Test voltage of 500V, TA=25℃ 10 - - ΩTest voltage of 500V, 100℃≤ TA ≤ 125℃ 10 - - Test voltage of 500V, TA=150℃ 10 - - - Pollution degree - - 2 - - UL1577 VISO Withstand isolation voltage VTEST=VISO, t=60 sec(qualification)； VTEST=1.2×VISO, t=1 sec(100% production) - 5000 - Vrms
7.5 SAFETY PARAMETERS
8.1 Propagation Delay
Figure 1. Input and Output Propagation Delay
8.2 CMTI
Figure 2. Simplified configuration of CMTI test
9.1 Input Characteristic
9.2 Drive Output Characteristic
connect a capacitor CGXX between the OUTH pin and the VGXX pin. Figure 3. Dual NMOS drive output
9.3 Secondary Side Voltage Regulator
negative voltages according to the full voltage (VISO-COM) which is provided externally. negative drive voltage available during power on. 4) 21V <VISO-COM: The positive voltage is maintained at 15V, the excess voltage is assigned to the negative supply. the voltage regulation is lost. Please avoid overload. Figure 4. Voltage regulation characteristic
9.4 Undervoltage Lock Out Protection
OUTL in low-level until the power supply voltage is completely established and then start working.
9.5 Short Circuit Protection and Soft Shut Down
power device is turned on, QCE is turned off. that the device is shut down in a soft way. Figure 5. Short circuit protection circuit Figure 6. Experimental waveform of soft shut down
9.4 Input and Output Logic Table
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x 10.Applications The following sections introduce the basic typical application of BASiC driver ICs, which is for reference only. In practical application, users need to verify and test its applicability according to their own design requirements to confirm the sys- tem functions.
10.1 Input and FAUL T Pins
Depending on the input voltage level of the input, a resistor divider can be used. When 5V logic PWM signal is used as input, it is recommended that R1=100Ω and R2=47kΩ. In order to improve the immunity to high-frequency interference, it is recommended that a filtering capacitor CF=100pF be connected to GND, the effects of high-frequency interference and delay should be taken into consideration in selecting this parameter. The FAULT pin adopts open drain output, it is necessary to connect a pull-up resistor RSO to the power supply VCC, it is recommended that RSO=4.7kΩ.
10.2 Power Supply Pins
In order to ensure the stability of power supply, it is recommended to add suitable block capacitors between power supply pin and ground: capacitors C1=4.7uF and C2=470nF in parallel between the primary power supply VCC-GND, two capacitors CS21=CS22=4.7μF in parallel between the secondary power supply VISO-VEE, two capacitors CS21=CS22=4.7uF in parallel between the secondary power supply VEE-COM. Typically the capacitance of CS21+CS22 and CS21+ CS22 should be at least 3μF corresponds to 1uC total gate charge (QGATE). A charge pump circuit is integrated on the secondary side, a bootstrap capacitor needs to be connected between VGxx to OUTH with CGXX=10nF .
10.3 Drive Output Pins
The gate of the power device is connected to the OUTH pin via the turn-on resistor RGON and to the OUTL pin via the turn- off resistor RGOFF. In any case, the power consumption and temperature of the gate resistor need to be taken into account properly. To ensure a stable gate voltage and to limit the collector or drain current during a short circuit, the gate is connected to the VISO pin via a Schottky diode DSTO (e.g. PMEG4010). To avoid false conduction of the power devices during system power-up, a pull-down resistor RDIS = 10 kΩ can be connected between the gate and the COM pin.
10.4 DESAT Pin
DESAT short-circuit protection can be achieved using either diode or resistor string. Figure 7 shows the use of diodes DVCE1 and DVCE2 for power device short-circuit desaturation detection. To ensure electrical insulation, two SMD package diodes (e.g., STTH212U) are typically used. the DESAT pin is connected to the VISO pin via resistor RRES. When the power device is on, the current from the power supply VISO flows through RRES, the diodes and the power device into the VEE pin. At power device short-circuit desaturation, the diodes switch off and VISO charges CRES through RRES. In this configuration, the short circuit response time is determined by RRES and CRES. CRES=33~330pF and RRES=24~62kΩ are typically selected. Both CRES and RRES can be adjusted if the desaturation is too sensitive or the short circuit duration is too long. Figure 8 uses resistors RVCE2-RVCE11 to detect short-circuit desaturation of power devices, the resistor value of RVCE2-RVCE11 should be selected so that the current flowing through the resistor is limited to between 0.6mA and 0.8mA under the maximum DC bus voltage. E.g. the total resistance value of RVCE2-RVCE11 should be approximately 1M for a 1200 V power device, with all resistors having a value of 100kΩ and in a 1206 package. In each case, the resistor string need to ensure sufficiently wide creepage distances and electrical clearances. Low leakage current diodes DCL (e.g., BAS416) can keep the short-circuit response time stable over a wide range of DC bus voltages. The response time can be set by RVCE and CRES (typical values are 120kΩ and 33pF for 1200V devices, respectively). CRES can be increased if short circuit detection is too sensitive. The maximum short circuit duration must be limited to the maximum value specified in the device datasheet.
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x °° 11.Packaging and Packing Information
11.1 Package Identifier
Note: 1) Legend unit: mm. This integrated circuit can be damaged by ESD.BASiC recommends that all integrated circuits be handled with appropriate precautions.Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Electrostatic Discharge Caution
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x Reel Width(W1) REEL DIMENSIONS Reel Diameter
11.2 Packing Information
Note: 1) Legend unit: mm. ITEM FOOTPRINT Reel Diameter 13 inches Reel Width(W1) 16mm
www.basicsemi.com Rev.0.1 Single-Channel Isolated Gate Driver BTD3011x BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 12.Version Description REVISION NOTES DATE Rev.0.0 Released datasheet 05-Apr-2023 Rev.0.1 Content optimisation 07-Jun-2024