BMF80R12RA3

BMF80R12RA3 BASICSEMI | Alldatasheet

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Package: 34mm Schematic Diagram 1 / 11www.basicsemi.com VDSS RDS(on).typ 1200V 80 A 15 mΩ@VGS=18 V ID (TC=100°C) Product Summary Note: This module is under development. Therefore, this preliminary specification might be changed in near future.If you use these data for various calculation, please contact us. Half Bridge Module SiC 1200V MOSFET Electrical Features Low RDS(on) High current density Low inductance design Low switching losses  Copper Baseplate Mechanical Features Welding Machine Induction Heating  DC-DC Converters Potential Applications BMF80R12RA3 Target Datasheet Rev. 0.0 2 (DC-) 3 (DC+) 1 (AC) (G1) 4 (S1) 5 (G2) 6 (S2) 7

2 / 11www.basicsemi.com Maximum Ratings(at T vj=25°C unless otherwise specified) Recommended values Symbol Parameter Test Conditions UnitMaximum Ratings V A W V VDSS ]+VGSS] ]-VGSS](*1) ]ID] ]IDM] ]-ID](*2) ]IDRM] PD Tvjop Tstg Visol Drain-source voltage, gate-source short-circuited Gate-source voltage, drain-source short-circuited Drain current Continuous DC DC Pulsed Pulsed Tvj=175°C, TC=25°C RMS, AC, 50Hz, 1min Power dissipation Operating virtual junction temperature (under switching conditions) Storage temperature Isolation test voltage 1200 160 160 190 175 -40~150 3000 TC=100°C Continuous TC=100°C (*1) For MOSFET Body Diode VGS.max=-4/22V (*2) Only for Body diode V V +18 VGS(on) VGS(off) On-state gate voltage Off-state gate voltage Symbol Parameter Test Conditions Values Unit BMF80R12RA3 Target Datasheet Rev. 0.0

3 / 11www.basicsemi.com SiC MOSFET Module ]+IGSS] ]-IGSS] VGS(th) Electrical properties of MOSFET (at Tvj= 25°C unless otherwise specified) μA μA V mΩ pF Ω µJ nC mJ ns Drain current, with gate short-circuited to source Gate leakage current, with drain short-circuited to source Gate-source threshold voltage Drain-source on-state resistance IDSS RDS(on) (@terminals) RDS(on) (@chip) VGS=0V VDS=1200V VDS=0V VGS=22V VDS=0V VGS=-10V VDS=800V, VGS= 0V VDS=800V, ID=80A, VGS=18V/-4V VDS=VGS ID =23mA VGS=18V ID =80A VGS =0V VDS ƒ VGS=18V ID =80A Tvj=25°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=25°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Tvj=175°C Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. Ciss Coss Crss Eoss RG(int) QG Eon Eoff Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Total gate charge Turn-on switching energy Turn-off switching energy td(on) tr Turn-on delay time Rise time Coss stored energy =+18V/-4V; =800V =80A =15Ω =8.2Ω =40nH Eon includes diode reverse recovery VGS VDS ID RG(on) RG(off) Lσ ƒ =1MHz, open drain 0.5 15.6 2.7 0.1 0.1 27.8 15.0 - 26.7 5600 210 80.5 1.70 220 2.4 2.7 1.0 1.3 43.5 35.4 27.6 23.8 70.2 96.5 36.4 41.4 - - - - td(off) tf Turn-off delay time Fall time =800V =100kHz BMF80R12RA3 Target Datasheet Rev. 0.0

4 / 11www.basicsemi.com SiC MOSFET Module Tvj=25°C 4.76 4.14 4.71 4.09 20.2 38.9 0.3 1.6 28.1 65.4 67.3 608.5 Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C Tvj=25°C Tvj=175°C VSD (@terminals) V ns A µJ µC Diode forward on voltage VSD (@chip) VGS=-4V ISD =80A VGS=-4V ISD =80A Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. trr Qrr Reverse recovery time Recovered charge Irrm Err Peak reverse recovery current Reverse recovery energy Tvj=25°C 1.18 2.17 1.13 2.12 Tvj=175°C Tvj=25°C Tvj=175°C VSD (@terminals) VDiode forward on voltage VSD (@chip) VGS=+18V ISD =80A VGS=+18V ISD =80A Electrical properties of Body Diode (at T vj= 25°C unless otherwise specified) Thermal properties K/WPer SwitchRth(j-c) Thermal resistance junction to case -- 0.63 Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. 17.0 20.0 17.0 9.5 >200 0.58 155 2.5 Al2O3 Cu - - Module mm mm mΩ N g dCreep dClear Internal isolation Material of module baseplate basic insulation terminal to heatsink terminal to terminal terminal to heatsink terminal to terminal Creepage distance Clearance Comperative tracking index Mounting force per clamp Weight Module lead resistance, terminals - chip Symbol Parameter Test Conditions Characteristics UnitMin. Typ. Max. CTI RDD'+SS' F G TC =25°C, per switch =+18V/-4V; =800V =80A =15Ω =8.2Ω VGS VDS ISD RG(on) RG(off) =40nHLσ BMF80R12RA3 Target Datasheet Rev. 0.0

5 / 11www.basicsemi.com Fig.3 Tvj=25ºC 3rd Quadrant Characteristics Fig.1 Tvj=25ºC Typical Output Characteristics Fig.2 Tvj=175ºC Typical Output Characteristics Fig.5 Typical Gate Threshold Voltage vs. Junction Temperature Fig.4 Tvj=175ºC 3rd Quadrant Characteristics Fig.6 Typical Static Drain-Source On-State Resistance vs. Junction Temperature BMF80R12RA3 120 160 0 2 4 6 8 10 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=25°C Pulsed 16, 18, 20V -160 -120 -80 -40 -8 -6 -4 -2 0 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=25°C Pulsed VGS= -4V VGS= -2V VGS= 0V 120 160 0 2 4 6 8 10 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=175°C Pulsed 16, 18, 20V -160 -120 -80 -40 -8 -6 -4 -2 0 Drain Current: ID [A] Drain-Source Voltage: VDS [V] Tvj=175°C Pulsed VGS= -4V VGS= -2V VGS= 0V 25 75 125 175 Gate Threshold Voltage : V GS(th) [V] Junction Temperature : Tvj [ºC] ID =23mA VDS=VGS Pulsed 25 75 125 175 Static Drain-Source On-State Resistance : R DS(on) [mΩ] Junction Temperature : Tvj [oC] VGS =18V ID =80A Pulsed Target Datasheet Rev. 0.0

6 / 11www.basicsemi.com Fig.8 Typical Static Source-Drain Voltage vs.Junction Temperature (VGS=+18V) Fig.7 Typical Static Source-Drain Voltage vs. Junction Temperature (VGS=-4V) Fig.9 Typical Transfer Characteristics Fig.11 Coss Stored Energy Fig.10 Typical Capacitance vs. Drain-Source Voltage Fig.12 Dynamic Input Characteristics BMF80R12RA3 3.5 4.5 5.5 25 75 125 175 Static Source-Drain Voltage : V SD [V] Junction Temperature : Tvj [oC] VGS =-4V ID =80A Pulsed 25 75 125 175 Static Source-Drain Voltage : V SD [V] Junction Temperature : Tvj [oC] VGS =+18V ID =80A Pulsed 120 160 0 5 10 15 20 Drain current : ID [A] Gate-Source Voltage: VGS [V] Tvj=175°C Tvj=25°C VDS=10V Pulsed 100 1000 10000 100000 0 200 400 600 800 1000 Capacitance : C [pF] Drain-Source Voltage: VDS [V] Ciss Coss Crss Tvj =25°C f =100kHz VGS =0V 100 120 0 200 400 600 800 1000 Coss Stored Energy : Eoss [µJ] Drain-Source Voltage: VDS [V] Tvj=25°C 0 50 100 150 200 250 300 Gate - Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Tvj =25°C VDD =800V ID =80A Pulsed Target Datasheet Rev. 0.0

7 / 11www.basicsemi.com Fig.14 Typical Switching Loss vs. External Gate Resistance VDD=800V, VGS=+18/-4V, ID=80A Fig.13 Typical Switching Loss vs. Drain Current VDD=800V, VGS=+18/-4V, RG(on)=15Ω, RG(off)=8.2Ω Fig.15 Typical Switching Time vs. Drain Current VDD=800V, VGS=+18/-4V, RG(on)=15Ω, RG(off)=8.2Ω Fig.16 Typical Switching Time vs. External Gate Resistance VDD=800V, VGS=+18/-4V, ID=80A Fig.18 Typical Time and Peak Current of reverse recovery vs. External RG(on) VDD=800V, VGS=+18/-4V, ID=80A Fig.17 Typical Time and Peak Current of reverse recovery vs. Drain Current VDD=800V, VGS=+18/-4V, RG(on)=15Ω, RG(off)=8.2Ω BMF80R12RA3 0 80 160 Switching Energy : E [mJ] Drain Current : ID [A] Eon Eoff Err Tvj=25°C Tvj=175°C 8 12 16 20 24 28 Switching Energy : E [mJ] External Gate Resistance : RG [Ω] Eon Eoff Err Tvj=25°C Tvj=175°C 120 0 80 160 Switching Time : t [nsec] Drain Current : ID [A] Td(off) Tf Tvj=25°C Tvj=175°C 120 240 360 8 12 16 20 24 28 Switching Time : t [nsec] External Gate Resistance : RG [Ω] Tf Tvj=25°C Tvj=175°C 100 1000 0 80 160 Reverse Recovery Time : t [nsec] Reverse Recovery Peak Current : Irrm [A] Drain Current : ID [A] [Ω] Irrm trr Tvj=25°C Tvj=175°C 100 1000 12 16 20 24 28 Reverse Recovery Time : t [nsec] Reverse Recovery Peak Current : Irrm [A] External RG(on) : RG trr Irrm Tvj=25°C Tvj=175°C Target Datasheet Rev. 0.0 Td(on) Tr Td(on) Tr Td(off)

8 / 11www.basicsemi.com Fig.19 Transient Thermal Impedance Zth(j-h)= f(t) BMF80R12RA3 Target Datasheet Rev. 0.0 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Thermal Impedance : Zth(j-h) [K/W] Time : tw [sec]

9 / 11www.basicsemi.com Definition of Switching Parameter (i) MOSFET (ii) Body Diode V GS +V GS 90% -V GS 10% I DV DS, I D 90％I D 90％I D 10％I D V DS 10％I D t d(on) t d(off) t r t f t (on) = td(on) + t r t (off) = t d(off) + t f V GS +V GS 90% -V GS 10% I DV DS, I D V DS2%V DS 2%I D t 1 t 2 t 3 t 4 V DS V DSI S I S 10% 10% 0 0 V DS I S V DS I S -I rrm t rr t 5 t 6 BMF80R12RA3 Target Datasheet Rev. 0.0

Package Dimensions (Unit: mm) Equivalent Circuit SiC MOSFET Module 10 / 11www.basicsemi.com BMF80R12RA3 Target Datasheet Rev. 0.0 2 (DC-) 3 (DC+) 1 (AC) (G1) 4 (S1) 5 (G2) 6 (S2) 7 xΦ

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Revision History

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